2005 6th International Conference on Electronic Packaging Technology最新文献

{"title":"300mm low k wafer dicing saw study","authors":"Wang Zhijie, S. Wang, J.H. Wang, S. Lee, Yao Su Ying, R. Han, Y.Q. Su","doi":"10.1109/ICEPT.2005.1564687","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564687","url":null,"abstract":"With the farther shrink of the IC dimension, the low k material has been widely used to replace the traditional SiO/sub 2/ ILD in order to reduce the interconnect delay. The introduction of low k material into silicon imposed challenges on dicing saw process, ILD and metal layers peeling and its penetration into the sealing ring of the die during dicing saw are the most common defects. In this paper, the low k material structure and its impact on wafer dicing were elaborated. A practical dicing quality inspection matrix was developed to assess the cutting process variation. A 300mm CMOS 90nm dual damascene low k wafer was chosen as a test vehicle to develop robust low k dicing saw process. The critical factors (dicing blade, index speed, spindle speed, cut in depth, test pattern in the saw street...) affecting cutting quality were studied and optimized. The selected C90 dual damascene low k device passed package reliability test with the optimized low k dicing saw recipe and process. The further improvement and solutions in eliminating the low k dicing saw peeling from both wafer fab and packaging assembly were also explored.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128126474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prediction of Delamination in Micro-electronic Packages","authors":"W. V. van Driel, M. van Gils, G.Q. Zhang","doi":"10.1109/ICEPT.2005.1564624","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564624","url":null,"abstract":"At present, a lot of delamination related reliability problems are observed in the micro-electronic industry. Examples are: die-lift; downbond stitch breaks associated with diepad delamination; passivation cracks related to interface delamination between chip and moulding compound. These reliability problems are driven by the mismatch between the different material properties, such as CTE, hygro-swelling, vapor pressure induced expansion, and degradation of the interfacial strength due to moisture absorption. The associated negative business consequence is significant. Clearly, the driving mechanisms of these delamination related problems should be explored before possible solutions can be found, such as expensive design changes and/or expensive material types to limit the delamination. This paper highlights our results to find the driving mechanisms for delamination-related reliability problems in micro-electronic packages using state-of-the-art virtual prototyping and/or qualification techniques. The numerical predictions are combined with novel interfacial adhesion test techniques able to measure the interfacial strength as functions of both temperature and moisture. As a typical example, delamination in the exposed pad package family is taken as a carrier. Novel numerical techniques are developed to predict the occurrence of interfacial delamination as function of manufacturing and testing conditions in micro-electronic packages. These techniques are improvements of well-known methods, such as virtual crack closure, J-integral, cohesive zone, and area release. The area release method does not require any presupposed position of any initial crack. Instead, at any desired positions within the specimen, an area energy release value is calculated which basically results from releasing an area (having a defined dimension) around each point in the specimen. Several reliable non-linear finite element models are developed to predict the moisture diffusion, deformation, stress, and interfacial energy history as functions of processes, temperature and moisture. Thus the effect of hygro-swelling, vapor pressure, interfacial degradation, and thermal expansion on delamination failures is predicted. Finally, by combining the models with simulation based optimization methods, design guidelines are derived for reducing reliability problems in microelectronic packages where the results provide us generic insight in the mechanisms of delamination-related problems","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121585449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bending and stretching studies on ultra-thin silicon substrates","authors":"L. Wang, K. Jansen, M. Bartek, A. Polyakov, L. Ernst","doi":"10.1109/ICEPT.2005.1564634","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564634","url":null,"abstract":"In this contribution, results of our work on reliability issues of ultra-thin poly- and single crystalline silicon layers on thin polyimide substrates under mechanical deformations is presented. By embedding the ultra-thin silicon layers into a thin flexible polyimide substrate and patterning of silicon into square or hexagonal segmentations, an increased mechanical flexibility and resistance against cracks could be reached. Generation of cracks within the silicon and dielectric layers is studied under controlled bending (cylinders with diameters of 2-10 mm, compressive and tensile stress) and tensile loads using bending and tensile tools, being specially designed for this purpose. Specimen observation was performed, using an optical microscope with possibility of digital recording and evaluation by pattern recognition software. The results show that the cracks appear first in the dielectric layers in-between the silicon layer segments and only at higher loads propagate or are initiated within the silicon itself. The development of first cracks depends significantly on the segmentation size of the silicon layer. This affects both the crack density and the crack width. The crack density increases sharply with the strain at early stage and then increases slightly. The crack width increases steadily. The high flexibility result reached here shows no crack detection under the bending tests with 2 mm diameter. A maximum strain failure criterion was established for the ultra-thin thermal silicon dioxide layer by specific bending and tensile tests","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114314057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gain in hydrostatic pressure sensitivity of fiber bragg grating packaged by polymer and metal cylinder","authors":"Wen Qing-zhen, Huang Jun-bin, Gu Hong-can, Yuan Bing-cheng","doi":"10.1109/ICEPT.2005.1564735","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564735","url":null,"abstract":"A fiber Bragg grating pressure sensor was designed and packaged by polymer and metal cylinder. In order to predict the hydrostatic pressure sensitivity, the relationship among the hydrostatic pressure sensitivity coefficient and the elasto-optic coefficient of bare fiber, Young's modulus, Poisson' ratio of the packaging polymer and geometry parameter was established. The theoretical and experimental pressure sensitivity coefficients are 5.37 times 10-3/MPa and 3.80 times 10 -3/MPa, which are 2781 and 1970 times of that of the bare fiber Bragg grating respectively. The experimental results agree to the calculated values","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114570832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Delamination prediction in stacked back-end structure underneath bond pads","authors":"B.A.E. van Hal, G.Q. Zhang, M. van Gils, R. Peerlings","doi":"10.1109/ICEPT.2005.1564639","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564639","url":null,"abstract":"The thermo-mechanical reliability of integrated circuits (ICs) gains importance due to the reducing feature sizes and the application of new materials. This paper focuses on the delamination in the stacked back-end structure underneath bond pads. Current simulation tools predict this failure mode following a linear elastic fracture mechanics approach; whereas an interface damage mechanics (IDM) approach would be more appropriate to our opinion. The basics of IDM by cohesive zone modeling are outlined. The cohesive zone finite element under consideration is a two-dimensional (2D) linear element for small deformations with an exponential traction separation law. A 2D plane strain model represents a simplified microstructure underneath a bond pad. Several finite element (FE) meshes are constructed with gradually decreasing mesh sizes along the interfaces. Furthermore, two cohesive zone parameter sets are considered, one for 'weak' adhesion between the material layers and one for 'strong' adhesion. The simulations with the FE models demonstrate the capability of IDM to simulate the damage evolution, where several interfacial cracks develop simultaneously. The effect of mesh refinement is illustrated. It improves the convergence of the applied nonlinear solution procedure. Furthermore, the correlation between the adhesion strength and the complexity of the equilibrium path is shown. Finally the conclusions are drawn for the current research and recommendations are given for the further development of IDM applied to delamination prediction in IC back-end structures","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116092270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of the electric field on Ni-induced crystallization in field-aided lateral crystallization process","authors":"Yuhang Wang, Langping Wang, B. Tang, D. Choi","doi":"10.1109/ICEPT.2005.1564612","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564612","url":null,"abstract":"As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low temperature. In this study, an electric field was directly applied between source and drain areas of H shape patterns using the Mo-W interconnecting layer. The effects of the current density and the electrical field strength on the crystallization behavior were investigated. Such crystallization behaviors are attributed to the coexisting effects of electromigration and potential gradient. In addition, the dependence of the degree of crystallization on the current density was studied and the microstructure crystallized by FALC was compared with the microstructure crystallized by metal induced lateral crystallization (MILC) process.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121742810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Parametric cost estimating: a practical independent method of estimating the manufacturing cost of chips to modules in the Peoples Republic of China","authors":"R. Farrington","doi":"10.1109/ICEPT.2005.1564614","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564614","url":null,"abstract":"The cost estimating discipline is making rapid progress in the Peoples Republic of China. Parametric cost estimating tools, including a microcircuit parametric estimating model, have been introduced to the major large system developers in China. The parametric cost estimating process not only estimates product cost but also provides an effective program cost management tool used for design to cost trade studies. This paper introduces the parametric cost estimating method and explores the parametric process when applied to an advanced microcircuit packaging (LTCC) in a high volume, relatively low cost application used in a rugged environment. The PRICE Systems Microcircuit (PRICE M) parametric cost estimating model is presented along with its fundamental cost drivers and factors. An independent parametric estimate for a low temperature cofired ceramic (LTCC) microcircuit module is presented. The required estimating parameters and the resulting estimate is described along with a technical walk-thru using the independent parametric estimate of the 24 GHz short range radar sensor for automotive applications. The independent cost analysis estimate is based upon a microcircuit developed in a joint project of IMST GmbH (Germany) with DuPont Microcircuit Materials (a detailed presentation of the microcircuit project is described in the IMAPS Advancing Microelectronics March/April 2005 publication). The packaged chips and all components along with the LTCC substrate cost and assembly and test costs of the assembled module is estimated and presented. The entire estimate uses P.R. China financial factors.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122144837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of copper free air ball in thermosonic copper ball bonding","authors":"Chunjin Hanga, Chunqing Wang, Mingda Shi, Xiaochun Wu, Honghui Wang","doi":"10.1109/ICEPT.2005.1564655","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564655","url":null,"abstract":"In order to meet the new requirements of higher performance and reliabilities for electronic devices, the copper wire ball bonding technology was developed to be an alternative method for the gold wire ball bonding technology because of its economic advantages, strong resistance to sweeping, superior electrical and mechanical performance. But copper wire ball bonding has not been widely implemented in mass production because of some difficulties. The major reason is that the copper is readily to be oxidized during FAB formation process. And the copper oxide would cause non-stick, crater and other reliability problems. Hence, to get standard FAB balls with consistent dimensions and unoxidized ball surfaces was crucial in copper wire ball bonding. In this paper, the impacts of different electronic flame off (EFO) parameters, such as EFO current, preset value of FAB size, gap length and forming gas flow rate and so on, on copper FAB sizes and surface appearance were investigated. It was found that the higher EFO current and preset value of FAB size was needed to form copper FAB balls comparing with gold FAB ball formation. Excessive gap length would cause more heat dissipation during EFO process and had an adverse effect on the copper FAB ball formation for 2 mil copper wire. Low flow rate forming gas would lead to FAB balls with top-ends and high flow rate would cause the tilted FAB ball. Excessive high flow rate would disturb the FAB formation environment. A medium flow rate was suitable for copper FAB ball formation; such as 0.8 l/min was preferred in this study.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116907219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solder joint failure modes, mechanisms, and life prediction models of IC packages under board level drop impact","authors":"J. Luan, T. Y. Tee, Xueren Zhang, E. Hussab","doi":"10.1109/ICEPT.2005.1564714","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564714","url":null,"abstract":"Drop impact performance of solder joints of IC packages becomes a great concern for handheld products, such as mobile phones and PDA. Failure modes of solder joints under drop impact depend on solder alloys, interfacial strength, intermetallic formulation, and etc. Submodeling technique is applied to model detailed structure of critical solder joint. The stress and strain concentration at different locations of solder joint correlate well with failure modes observed during testing. Eutectic solder joint is more susceptible to bulk solder failure while Sn-4Ag-0.5Cu is more susceptible to intermetallic compound (IMC) layer failure. Softness of Sn-37Pb reduces the stress in IMC while increases the plastic strains in bulk solder. Life prediction model is determined by solder joint failure mode and mechanism. Stress criteria is suitable for IMC interfacial brittle crack while plastic strain criteria should be applied for life prediction of bulk solder ductile failure.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130131127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experiments on Microstructure, Joint Strength of Sn3Ag0.5Cu, Sn8Zn3Bi versus 63Sn37Pb in High Density Assembly Application","authors":"Pan Kai-lin, B. Tsai, Feng Yan-peng","doi":"10.1109/ICEPT.2005.1564752","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564752","url":null,"abstract":"The European community has been finalized to phase out on July 1, 2006 for lead (Pb) in electronic products. This cause the EMS is required to study new materials for replacing the lead in its products. This paper presents the manufacturability and reliability study of two competitive lead-free alternatives. A series experiments are carried out, and the voids, microstructure and joint strength of Sn₃Ag_0.5Cu, Sn₈Zn₃Bi versus traditional ⁶³Sn³⁷Pb are compared and analyzed, which conclude Sn₃Ag_0.5Cu and ⁶³Sn³⁷Pb can be reliable application from leaded soldering process transition to lead-free process and the more voids tendency in Sn₈Zn₃Bi must be under control","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125523286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}