2005 6th International Conference on Electronic Packaging Technology最新文献

{"title":"Study on Life Distributions of the Elements Based on Rough Function Theory","authors":"S. Hongsheng, Li Qunzhan","doi":"10.1109/ICEPT.2005.1564617","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564617","url":null,"abstract":"In view of the facts that complexity of life distributions of the parts, classical exponential distributions can't truthfully and profoundly portray it due to inconsideration depreciation behavior impacts in process of the elements life, therefore, under many situations, the acquired results do not accord with objectivity. However, once deviating from the assumption of the exponential distributions, quantitative analysis of the stochastic life will face difficulties. Therefore, in accordance with the characteristics of phase-type(PH) distributions of its approaching all distributions in nature, the paper applies the rough function concept to construct the PH distribution function sets called the upper approaching and the lower approaching sets, the upper approaching function set is those smallest distribution functions whose lives are bigger than practical life, the lower approaching distribution function set is those largest distribution functions whose lives are smaller than practical life, the boundary between them is a measurable domain of practical life distributions. The section is created in [0,+infin) by PH distribution function classes, after a larger number of the elements lives are tested and processed, the life distributions of the tested elements only rely on its location in the boundary. Obviously, the lower approaching function sets are those PH distributions that all tested elements lives are bigger than their lives, and the upper approaching function sets are those PH distributions that all tested elements lives are lower than their lives, the remained PH distribution classes can more accurately approach practical life of the elements. The paper forecasts the life distributions of the elements by using of mixed Erlang distribution, a sort of PH distribution function classes, research results show that the method is simple and flexible, and is an instruction idea for evaluation of life or life distributions of the elements, and relatively more accurate than conventional ways based on exponential distributions, and more robust","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134368451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The paradigm of \"more than Moore\"","authors":"G.Q. Zhang, F. van Roosmalen, M. Graef","doi":"10.1109/ICEPT.2005.1564646","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564646","url":null,"abstract":"Microelectronics has pervaded our lives for the past fifty years, with massive penetration into health, mobility, security, communications, education, entertainment, and virtually every aspect of human lives. In the past decades, as the main stream, these progresses are powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano dimension, and SoC based system integration. While microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there are ever-increasing awareness, R&D effort and business drivers to push the development and application of \"more than Moore\" (MtM) that are based upon or derived from silicon technologies but do not scale with Moore's law (with typical examples as RF, power, sensor and actuator, SiP, heterogeneous integration, etc.). This emerging trend is partially trigged by the increasing social needs for high level system integration including non-digital functionalities, the necessity to broaden the product portfolio of existing wafer fabs, and the limiting economic and time factors of advanced SoC development. Starting from the rationale of MtM, this paper will highlight some strategic research subjects for the major \"MtM\" related technology building blocks. Some issues related to the paradigm of MtM, covering industrial vision, strategy and business models, will also be discussed.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133026940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CVD diamond film sink for high power MCMs","authors":"Kuojun Xie, Changshun Jiang, Haifeng Xu, Lin Zhu","doi":"10.1109/ICEPT.2005.1564611","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564611","url":null,"abstract":"As electronic packages become more compact, run at faster speeds and dissipate more heat, package designers need more effective thermal management materials. CVD Diamond, because of its high thermal conductivity, low dielectric loss and its great mechanical strength, is an excellent material for three dimensional (3-D) multichip modules (MCMs) in the next generation compact, high speed computers and high power microwave components. In this paper, we have synthesized a large area free-standing diamond films and substrates, and polished diamond substrates, which make MCMs diamond film sink becomes a reality.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124086259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"System-level thermal management modeling of a supercomputer chassis","authors":"Gaowei Xu, Yingjun Cheng, Dapeng Zhu, Xiaoqin Lin, L. Luo","doi":"10.1109/ICEPT.2005.1564697","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564697","url":null,"abstract":"In this paper, the thermal performance of a 4U drawer-type chassis being used in the cabinet of a kind of supercomputer system was simulated so as to evaluate and optimize the primary design and subsequently arrange for mock-up. This study focuses on the 128 ASIC chips, which generate approximately 700 watts of power. This study described the process of using the FLOTHERM simulation software to evaluate the pressure, velocity of airflow and the temperature distribution especially maximum chip temperature in chassis. In this modeling three-dimensional, steady state and forced wind cooling is assumed. The rigorous three-dimensional finite element thermal model is established. The significant variables of the chassis, such as the layout of PCB, parameters of heatsink and fans, clearance spacing between PCBs, chip power dissipation, ambient temperature and air refrigeration mode etc. are analyzed and optimized. The dependency relationship of maximum chip temperature vs. fin-pitch, fin-thickness and clearance space between PCBs are given quantitatively and qualitatively, respectively. The actual chassis mock-up in accordance with the optimized result is in process.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121037238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural Similarity as a Method to Reduce Qualification Tests","authors":"W. V. van Driel, G.Q. Zhang, L. Ernst","doi":"10.1109/ICEPT.2005.1564622","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564622","url":null,"abstract":"To efficiently select qualification and reliability monitoring programs, structural similarity rules for integrated circuit designs, wafer fabrication processes and/or package designs are currently used by the industry. By following the package structural similarity rules, the numbers of reliability qualification tests may be greatly reduced. However, when looking at the present rules it is clear that they are not reliably defined. For instance, geometrical parameters such as die-to-pad ratio are not quantitatively included and it seems that linear relationships are assumed. Besides that, these rules are mainly deducted from experience and industrial trial and error results, not from reliability physics. Driven by the present development trends of microelectronics (miniaturization, integration, cost reduction, etc) it is urgently needed to develop 'structural similarity rules' based on reliability physics (physics of failures), to meet the industrial development trends. In this study, we have used simulation-based optimization techniques to deduct such structural similarity rules. Parametric 3D non-linear FE models are used to explore the responses of the complete BGA family for both the thermo-mechanical and moisture-diffusion responses as function of six parameters among which the die-to-pad ratio and the body size. In this way, structural similarity rules are deduced which can be used to shorten design cycles. Even more, by using the accurate 3D nonlinear reliability prediction models, an Excel-based tool is created for package designers. By using this tool, the number of reliability qualification tests can be reduced. More importantly, possible failure mechanisms can be (better) understood and predicted","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116697235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Testing Conditions and Multiple Reflows on Cold Bump Pull Test of Pb-free Solder Balls","authors":"F. Song, S. Lee","doi":"10.1109/ICEPT.2005.1564698","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564698","url":null,"abstract":"Ball pull test has emerged to be an attractive alternative to the traditional ball shear testing method for characterizing the attachment strength of solder interconnection. Since this is a relatively new development, so far there is no industrial standard to regulate this testing method. In this study, the pull and shear tests are performed on plastic ball grid array (PBGA) solder balls with Sn-4.0Ag-0.5Cu and Sn-37Pb solders, subject to a wide variety of testing conditions. To investigate the material sensitivity of Sn-Ag-Cu and Sn-Pb solder balls, different pull speeds are used on both kinds of solder balls for comparison. The pull speed ranges from 25 mum/s to 5000 mum/s, while the shear speed ranges from 25 mum/s to 500 mum/s. The pull and shear tests are also conducted on samples with Sn-Ag-Cu and Sn-Pb solder balls after multiple reflows. Various failure modes of ball shear and ball pull tests are discussed for comparison. The sensitivity of both methods on brittle interface fracture is addressed. Furthermore, different pull speeds are applied to Pb-free solder samples after multi-reflows. Favorable testing conditions will be recommended","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115223723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Digital image correlation for analyzing portable electronic products during drop impact tests","authors":"Pieter Scheijgrond, D. Shi, W. V. van Driel, G.Q. Zhang, H. Nijmeijer","doi":"10.1109/ICEPT.2005.1564683","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564683","url":null,"abstract":"In this paper the feasibility to analyze a guided free fall drop of portable electronic products by optical inspection using digital image correlation is studied. This technology can examine the product on every arbitrary place on its surface and allows the product to make guided free fall drops. For this study, a mobile phone is dropped on a pavement stone under different orientations and heights. The phone is prepared with a speckle and the impact is recorded by using a high-speed camera. A custom made program based on digital image correlation is used to calculate the displacement fields during the impact. Out of these results deformations, strains, G-levels, velocities, energy losses, rotations and bending are calculated. Both local and global phenomena are measured and different impact orientations and heights are examined. The results provide new insights in drop test performance.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114201745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of Heat Dissipation Performance of CVD Diamond Film’s Sink for 3D-MCM","authors":"Kuojun Xie, Changshun Jiang, Haifeng Xu, Lin Zhu","doi":"10.1109/ICEPT.2005.1564629","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564629","url":null,"abstract":"3D-MCM may play a important role in microelectronics in next century, a key problem must be solved: how to remove internal heat to exterior effectively in practical use . This work describes the use of CVD-diamond on stacked 3D-MCM thermal management, the symmetry of the model was utilized, a three dimensional model of only 1/4 section of the model was built and numerical simulation based on FEA was performed. A comparison was made between the calculated temperature distribution using CVD-Diamond and that using other materials .","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114438886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tin bumping for wafer level lead-free packaging","authors":"Lei Nie, Jian Cai, Zhao Fang, Shuidi Wang, Songliang Jia","doi":"10.1109/ICEPT.2005.1564741","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564741","url":null,"abstract":"A pure tin bumping technology is described in this paper. TiW/Cu was used as under bump metallurgy. The pure tin was electroplated and formed solder bumps by reflow. The height of the solder bump is about 50 micron. SEM was used for observing the microstructure of interface, and the EDAX was used for investigating the composition of the intermetallic compounds. Tin and copper interreacted with each other to form intermetallic compounds, Cu/sub 6/Sn/sub 5/. Shear tests and thermal aging were used for evaluation of the tin solder bumps. The pure tin bumps were stored at 150/spl deg/C for 1, 4, 9 and 16 days respectively. The composition of intermetallic compound changed as time going on. After several days of thermal aging, C/sub 3/Sn formed between Cu and Cu/sub 6/Sn/sub 5/. The total thickness of intermetallic compound increased after thermal aging. The relationship between the thickness of intermetallic compound and the square root of aging time is linearity, implying that the growth of the IMC layer was diffusion controlled. Comparing the strength of tin solder bumps before and even after thermal aging, it was found that after 16 days of thermal aging, the shear strength of solder bump did not change obviously.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131847014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A study of thermosonic gold wire bonding onto silver plated copper pad","authors":"Wu Feng-shun, Hu Yanxiang, Wu Yiping, An Bing, Z. Jinsong","doi":"10.1109/ICEPT.2005.1564658","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564658","url":null,"abstract":"A thermosonic (TS) bonding process for gold wire bonded onto copper pad was successfully developed by plating a thin, silver passivation layer on the copper pad. The copper pad oxidizes easily at elevated temperature during TS wire bonding. The bondability and bonding strength of the gold ball onto copper pads are significantly deteriorated if a Cu-oxide film exists. To overcome this intrinsic drawback of the copper pad, a silver thin film was plated onto it to improve the bondability and bonding strength. Ultrasonic power, bonding time and bonding force are the most important process parameters for a sound bonding. In order to study the effects of these process parameters on bond shear force and the region of bonding, gold wire bonding was performed on a Kulicke&Soffa 1484XQ wire bonder with the silver plated copper pads. This study showed that an appropriate combination of ultrasonic power, bonding force and time is very necessary to obtain optimal bonded bumps. The application of higher ultrasonic power or higher bonding force not only results in a larger bonded area, but also causes excessive deformation of the bump, which may not be acceptable. With an increase in power, the bond shear force also increased and reached a maximal value, but with further increase of power, shear force would decrease. Bonding force showed the similar trend as bonding power, the bond shear force increased with bonding force up to an optimum value, but decreased gradually with further increase of bonding force. In contrast to the effects of ultrasonic power and bonding force on bond shear force, the bond shear force increased with the increase of bonding time monotonously in a certain range of bonding time.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133986096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}