2005 6th International Conference on Electronic Packaging Technology最新文献

{"title":"Numerical Simulation on Electroosmotic Flow in a Rectangular Microchannel","authors":"Zhang Peng, Z. Chuncheng, Z. Deyi, Chen Hongli, Liu Yan","doi":"10.1109/ICEPT.2005.1564671","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564671","url":null,"abstract":"Computer simulations of electroosmotic flow through rectangular microchannels have been completed in this paper. A 2D Poisson-Boltzmann equation and a 2D Navier-Stokes equation governing the electric double layer (EDL) field and velocity field in the cross section of rectangular microchannels are numerically solved by employing a finite control volume scheme without the use of Debye-Huckel approximation. The numerical solutions show the influences of the channel cross-section geometry (i.e. the aspect ratio), channel size, the ionic concentration and the applied electrical field strength on the volumetric flowrate and the average velocity. And the numerical simulation results show significant influences of the channel cross-section geometry on the volumetric flowrate. Also, the numerical simulation results show that the volumetric flowrate increased with the square of hydraulic diameter. However, increases in hydraulic diameter have little impact on the average velocity. The objective of this paper is to provide the basis for electroosmotic pumping","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121419199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"System Damping Ratio Analysis of a Capacitive Micromechanical Accelerometer","authors":"L. Xiaowei, Chen Hong, C. Weiping","doi":"10.1109/ICEPT.2005.1564696","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564696","url":null,"abstract":"In this paper, system damping ratio analysis and optimization of a capacitive MEMS accelerometer is performed. To investigate the influence of damping on the system dynamic characteristics the system dynamics equations with or without damping are solved. The results indicate that when the device works without damping it is easily damaged because of resonance. However, when it works with damping, its dynamics characteristics will improve and its bandwidth will widen. Harmonic response analysis is performed to verify the results using the FEM software ANSYS. According to the squeeze-film damping coefficient of a rectangle, the system-damping coefficient is related to the width and length of proof mass and the gap between glass and mass. The damping coefficient formula is used to optimize the system dynamic characteristics by adjusting system-damping ratio to 0.678 through changing the parameters of the proof mass","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130010160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"System in package (SiP) technology applications","authors":"W. Koh","doi":"10.1109/ICEPT.2005.1564753","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564753","url":null,"abstract":"System in package (SiP) and multichip package (MCP) in recent years have seen expanded applications in portable, consumer electronics as well as computing and telecommunications. Memory-related packages now occupy a large share of SiP. This paper uses the NAND and NOR flash memory technology and their SiP packages as example to illuminate the market trend and major applications of SiP. Some examples of SiP and MCP design for flash and SRAM, DRAM memory packages and digital memory cards are described as example. The manufacturing process, testing, cost, reliability concerns and future technology development outlook are discussed.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129612379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MEMS Vacuum Packaging Technology and Applications","authors":"Yufeng Jin, Jiaxun Zhang","doi":"10.1109/ICEPT.2005.1564710","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564710","url":null,"abstract":"Many MEMS (micro electro-mechanic systems) parts have to meet the requirements for vacuum packaging. In vacuum packaging, leakage and gas permeation, which affects the normal function of the components, are major problems. Hermetic sealing is one of the most important technologies for reliable vacuum packaging. In this paper, several hermetic sealing technologies for vacuum packaging was presented, including eutectic bonding, adhesive bonding, glass frit bonding, and silicon-glass anodic bonding. Furthermore, the author introduced two approaches to deal with sealing imperfect surface caused by electric feedthroughs, which link to the outside of the small cavity of MEMS sensors. The getter was discussed as it is essential to keep the vacuum environment inside the cavity of device since the inner walls might release gas after hermetic seal","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128903465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical Characterisation of Electronic Packaging Solutions based on Hidden Dies","authors":"J. Sommer, B. Michel, A. Ostmann","doi":"10.1109/ICEPT.2005.1564694","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564694","url":null,"abstract":"Innovative electronic portable products can be characterised by increasing signal frequencies and the demand on higher density of functions, which requires more space, for active components as well as for passives. One way to meet these requirements is a three-dimensional integration of components. The authors follow a so-called “chip in polymer” approach, which allows an extremely dense integration and very short interconnects. Thinned Si-components are embedded directly into the printed circuit boards, and the interconnects are realised by laser drilling and galvanic metallisation. In order to achieve high functionality and reliability and to minimise the number of later redesign loops, thermal and thermo-mechanical reliability aspects are taken into account already from the initial design phase. For this purpose, numerical studies by means of finite element (FE) analyses are very efficient to check the desired properties. The authors’ approach for a package design, containing different types of test structures and ICs, is outlined. First, FE calculations were carried out in order to study the thermal performance. The number, positions, and dimensions of thermal vias were investigated in detail, and their influence on leading heat off could be evaluated. Beside this, the fraction of copper in the top metallisation layer of the package was taken into account. In order to reduce the number of necessary real parts and the effort for the test procedures, a special test board was designed with different versions of interconnects between the hidden dies and the ambient.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126961918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of a double-layer anisotropic conductive film (ACF) for fine pitch chip-on-glass (COG) interconnection","authors":"Lei Jia, H. Ding, X. Sheng, B. Xie","doi":"10.1109/ICEPT.2005.1564729","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564729","url":null,"abstract":"Anisotropic conductive films (ACFs) consist of conductive particles and adhesive resins and have been extensively used for chip-on-glass (COG) interconnection in FPDs (flat panel displays) such as LCD (liquid crystal display) for the last decades. It is one of the highest density packaging processes at present. However, the need for higher resolution and larger capacity displays is driving the need for finer pitch interconnection. In order to meet these requirements, many approaches were developed by researchers. Since it is difficult to capture enough particles on the small bumps while securing the insulation between the adjoining terminals, currently two types of ACF are widely adopted: an ACF containing conductive particles coated with insulated layer; a double-layer ACF that consists of an ACF layer and a NCF (nonisotropic conductive film) layer. However, both of them have the inevitable limitation. An ACF which has a double-layer structure and the ACF layer consisting of conductive particles coating with insulated layer was investigated in this paper. We carried out the COG experiments with test TC and glass under several different contact areas, another kind of normal single-layer ACF was also adopted which has the higher particle density than the novel ACF for comparing. It was found that the number of particles trapped between the bump and the corresponding pad increased obviously. A thermal cycling test and a high temperature humidity test were also taken, the ACF showed more acceptable contact resistance, and no short was found.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115958446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism and control of linear positioning for IC wire bonders","authors":"Juan Li, Yanjie Liu, Lining Sun, D. Jie","doi":"10.1109/ICEPT.2005.1564751","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564751","url":null,"abstract":"Chip packaging is an important process during IC manufacturing, which determines the IC productivity and performance to a great extent. Wire bonders are key equipments of chip packaging. The development trend of high performance wire bonders leads to the needs that the positioning stage, which is the basic component used in wire bonders, possess high dynamic performance and high steady precision. Currently the positioning stage consists of the parallel mechanism and direct-drive linear servomotors. This paper firstly reviews the current development of wire bonders, and investigates the performance of linear positioning used in wire bonders. Secondly, various advanced linear drive components are compared, and it is can be concluded that voice coil motor is the most ideal actuator in wire bonders. Finally, the control methods used in linear motors are investigated and their applicability is indicated respectively.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122287607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of undercoat with high temperature and humidity resistance for resistor","authors":"Xiuyu Wang, Zhisheng Zhang","doi":"10.1109/ICEPT.2005.1564620","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564620","url":null,"abstract":"Epoxy resin undercoat, with high temperature and humidity resistance, for resistor was prepared by curing of acid anhydride and accelerating of glycol with proper nano-SiO/sub 2/ added at 80/spl deg/C. The properties of undercoat prepared were characterized by electrical tests, infrared spectra (IR), thermogravimetric analysis (TGA) and scanning electron microscopy (SEM). The results showed more compact and steady inter-crosslinked network structure was formed in the modified epoxy resins undercoat with nano-SiO/sub 2/ added, which leaded to the performance of modified epoxy resin undercoat improved greatly. The undercoat with nano-SiO/sub 2/ 2.68wt%, kept for six months at room temperature without flocculating and aggregating, is of good stability. The varying ratio of resistance with such undercoat painted is less than 1% after high temperature and humidity resistance test. In this work, an attempt has been made to prepare undercoat, with high temperature and humidity resistance, for resistor by modifying epoxy resin using nano-SiO/sub 2/.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129022866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental and numerical investigation on warpage of QFN packages induced during the array molding process","authors":"D.G. Yang, K. Jansen, L. Ernst, Zhang Gq, J. Beijer, J. Janssen","doi":"10.1109/ICEPT.2005.1564637","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564637","url":null,"abstract":"An investigation on the process-induced warpage during the array-molding process of QFN packages was conducted both experimentally and numerically. A series of molding experiments for QFN matrix strips with the model-molding compounds were performed. In the molding experiments, different processing parameters, filler loading and die thickness were used. The warpage was measured by a contact probe coordinate measuring system. A cure-dependent constitutive model for the encapsulating EMC was applied to describe the behavior of the material during the curing process. The cure-dependent material parameters were incorporated into a finite element code MARC and numerical simulations were carried out for the QFN array-molding process. The effects of filler percentage of the molding compound, the curing temperature profiles and the die thickness on the warpage were studied. The results show that both of the filler percentage and the die thickness has a significant effect on the final warpage level.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127179202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Studies on fabrication of high density MCM-D substrate by aluminum anodization techniques","authors":"Dapeng Zhu, Lichun Wang, Yingjun Cheng, Gaowei Xu, L. Luo","doi":"10.1109/ICEPT.2005.1564709","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564709","url":null,"abstract":"High density and high reliability MCM-D substrates attract much attention in the microelectronics packaging area. In this paper, we present recent studies on aluminum thin film anodization process to fabricate high density MCM-D substrate. With this technology four layers MCM-D substrates deposited on glass bases are successfully fabricated. The glass plate is selected as heat sink base of the substrate. Aluminum anodization equipment is developed to prepare porous aluminum oxide thin film dielectrics. Aluminum interconnect strips are formed in each thin film layer and aluminum via posts which link adjacent layers are prepared by selective anodization method. Kelvin structure and comb patterns structure are designed and fabricated to test via posts resistance and the insulation resistance in surface layer and in between adjacent layers. The resistance tests meet the GJB test standard. Peripheral and array structures are designed for flip chip interconnection. Three main steps are involved in the process. Firstly, aluminum thin film is deposited on a glass substrate. Secondly, photoresist is coated and developed to make the anodization mask. The aluminum strips and via posts are protected by the photoresist mask. Then the aluminum film is selective anodized in the electrolyte to porous anodic alumina, thereby creating conductance strips and via posts in this step. The above three steps are repeated until the required number of layers are achieved. In the traditional etch process to make MCM-D substrate, the etch process in multilayer lead to nonplanarity etch steps. The metal film coverage of the steps is crucial to conductance interconnect and reliability. The selective anodization processes overcome the nonplanarity problem. Conductance strips and via posts and insulation dielectric layers are formed in the same plane. The interconnection and reliability of substrate are improved greatly. In the fabricated MCM-D substrate, the minimum sizes of conductive line and via posts are 20 /spl mu/m and 40 /spl times/ 40/spl mu/m respectively. The resistance of the layer insulation dielectrics is higher than 10/sup 9/ /spl Omega/. There was no residual aluminum thin film and short current between conductance strips. Aluminum between strips was totally anodized to insulated porous anodic alumina. The brevity of process and good planarity of structure make MCM-D substrate more reliable and suitable for the high density and reliability microelectronic systems.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134054471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}