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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)最新文献

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Reed-Solomon codecs for optical communications 用于光通信的里德-所罗门编解码器
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003332
E. Popovici, P. Fitzpatrick
{"title":"Reed-Solomon codecs for optical communications","authors":"E. Popovici, P. Fitzpatrick","doi":"10.1109/MIEL.2002.1003332","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003332","url":null,"abstract":"This paper presents methods for improving the performance of a Reed-Solomon codec (encoder/decoder) so that it matches the requirements of high throughput/low power of an optical communication system. It is shown that by a careful selection of the underlying Galois field arithmetic architectures, and of the algorithms for finding the error locations and error values, the performance can be improved substantially over current techniques. We show that the symbol-parallel Fitzpatrick algorithm for solving the key equation uses 30% fewer multipliers than Berlekamp-Massey type architectures, thus achieving a cost reduction for the entire codec. The implementations are synthesised for Xilinx FPGAs and LSI lca 300 k array-of-gates technologies.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129823840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Asymmetric ratio sensors of nonelectric quantities 非电量的非对称比例传感器
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003179
V. Tvarozek, Z. Řezníček, A. Jakubec, I. Novotný
{"title":"Asymmetric ratio sensors of nonelectric quantities","authors":"V. Tvarozek, Z. Řezníček, A. Jakubec, I. Novotný","doi":"10.1109/MIEL.2002.1003179","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003179","url":null,"abstract":"A novel asymmetric ratio resistance method for the measuring of nonelectric quantity changes, e.g. temperature differences, is introduced. On the basis of that method the combined temperature sensor has been developed with high accuracy (relative error /spl les//spl plusmn/0.1%) and sensitivity adjustable to the desired value (C/sub r/= -500 ppm//spl deg/C). This principle is applicable in thermal biosensors as well as in microelectrochemical sensors and also in various physical microsensors.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126279376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mechanical influences on the electrical characteristics of the mobile gate MOS capacitors 机械对移动栅极MOS电容器电学特性的影响
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003181
L. Dobrescu, D. Dobrescu, A. Rusu, C. Ravariu
{"title":"Mechanical influences on the electrical characteristics of the mobile gate MOS capacitors","authors":"L. Dobrescu, D. Dobrescu, A. Rusu, C. Ravariu","doi":"10.1109/MIEL.2002.1003181","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003181","url":null,"abstract":"This paper presents the model for an electromechanical variable capacitor designed as an MOS capacitor with a beam. It studies the influences of the beam on the electrical characteristics of the capacitor.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126305698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of /spl gamma/-rays on the optical and electrical properties of copper-phthalocyanine thick films /spl γ射线对铜-酞菁厚膜光学和电性能的影响
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003209
A. Arshak, S.M. Zleetni, K. Arshak, J. Harris
{"title":"Effect of /spl gamma/-rays on the optical and electrical properties of copper-phthalocyanine thick films","authors":"A. Arshak, S.M. Zleetni, K. Arshak, J. Harris","doi":"10.1109/MIEL.2002.1003209","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003209","url":null,"abstract":"Capacitive devices with Ag/CuPc/Ag sandwich structure were fabricated using screen-printing. The effects of /spl gamma/-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The energy values of the optical band gap showed irregular slight increase when the CuPc thick films were irradiated. The as-printed (unexposed to /spl gamma/-rays) and irradiated Ag/CuPc/Ag devices demonstrated a Schottky conduction mechanism. The absorbance and the capacitance of the CuPc thick films exhibited highly consistent linear response to the exposure of /spl gamma/-radiation.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129061185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Aging of the over-voltage protection components 过压保护元件老化
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003339
B. Loncar, P. Osmokrović, S. Stankovic
{"title":"Aging of the over-voltage protection components","authors":"B. Loncar, P. Osmokrović, S. Stankovic","doi":"10.1109/MIEL.2002.1003339","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003339","url":null,"abstract":"The aim of this work was to examine the influence of the number of activations, i.e. over-voltage pulses, on the aging of over-voltage protection elements. Both nonlinear (gas-filled surge arresters (GFSA), varistors, over-voltage diodes), and linear (capacitors-constituents of filters) over-voltage protection elements were tested. The instruments used allowed reliable measurements, and 1000 consecutive activations were carried out. A current pulse, (I/sup max/=13 A, 16 A; T/sub 1//T/sub 2/=8/20 /spl mu/s) for non-linear elements and a double exponential over voltage pulse (1.2/50 /spl mu/s) of amplitude 320 V, 480 V and 640 V for capacitors was used. The experimental results showed that the over-voltage diodes are the most reliable elements, considering changes of characteristics as a result of aging. It was observed however that varistors, GFSAs and capacitors suffered noticeable changes in characteristics.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124317672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Symbolic computation of digital filter transfer function using MATLAB 数字滤波器传递函数的MATLAB符号计算
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003342
M. Lutovac, D. Tosic
{"title":"Symbolic computation of digital filter transfer function using MATLAB","authors":"M. Lutovac, D. Tosic","doi":"10.1109/MIEL.2002.1003342","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003342","url":null,"abstract":"We present an original software DFSYM for symbolic computation of transfer function of digital filters and linear time-invariant discrete-time Systems. The software uses standard MATLAB commands and MATLAB SYMBOLIC TOOLBOX. The transfer function is derived directly from the filter schematic created by DrawFilt. DFSYM finds transfer function of filters with arbitrary real or complex coefficients. Filter designers, practitioners, students, researchers, educators and scientists can use DFSYM to evaluate, validate, document or verify the existing filter realizations or to explore, get insight to and optimize the filters they work on.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120943752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing 微波处理增强Ta/sub 2/O/sub 5/-p-Si异质体系的结构-相有序性
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003313
E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi
{"title":"Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing","authors":"E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi","doi":"10.1109/MIEL.2002.1003313","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003313","url":null,"abstract":"We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem and MIS structures with Ta/sub 2/O/sub 5/ insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta/sub 2/O/sub 5//p-Si interface becomes essentially ordered.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121042316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermal model of power semiconductor devices for electro-thermal circuit simulations 用于电热电路模拟的功率半导体器件热模型
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003167
P. Igić, P. Mawby, M. Towers, S. Batcup
{"title":"Thermal model of power semiconductor devices for electro-thermal circuit simulations","authors":"P. Igić, P. Mawby, M. Towers, S. Batcup","doi":"10.1109/MIEL.2002.1003167","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003167","url":null,"abstract":"An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122965205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Advances in silicon carbide MOS technology 碳化硅MOS技术进展
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003146
P. Mawby, C. Kampouris, A. Koh
{"title":"Advances in silicon carbide MOS technology","authors":"P. Mawby, C. Kampouris, A. Koh","doi":"10.1109/MIEL.2002.1003146","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003146","url":null,"abstract":"This paper presents recent advances in the development of MOS power devices fabricated in silicon carbide. In particular it focuses on the quality of the interface between the oxide and the semiconductor. This is particularly important as it has a serious detrimental effect on MOSFET performance when excessive interface states exist. Careful growth and characterisation of a number of samples have been performed, resulting in samples with the best interface state density reported to date.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115525922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Optimizing AT/sup 2/ measure of hexagonal systolic arrays 六边形收缩阵列AT/sup 2/ measure优化
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003336
E. Milovanovic, N. Stojanovic, I. Milovanovic, T. Tokic, M. Stojcev
{"title":"Optimizing AT/sup 2/ measure of hexagonal systolic arrays","authors":"E. Milovanovic, N. Stojanovic, I. Milovanovic, T. Tokic, M. Stojcev","doi":"10.1109/MIEL.2002.1003336","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003336","url":null,"abstract":"The major features of adopting systolic arrays (SA) for special purpose processing architectures are: simple and regular design, concurrency in communications, and balancing computation with the I/O. In this paper we synthesize a family of hexagonal arrays, SA(r), that implement matrix multiplication. We have observed that the execution time of a hexagonal array, which has a minimal number of processing elements (PE) for a given problem size, can be reduced if the number of PEs is increased. Since the execution time and the number of PEs are the two most important performance measures of the systolic array, we take their product AT/sup 2/, AT/sup 2/=/spl Omega//sub r/(n)T/sub exe//sup 2/, to compare the arrays from this family. With respect to this performance measure, the best array is obtained for r=[n/2], where n is a dimension of square matrices while r indicates the extension, in terms of rows, of the array that has minimal number of processing elements for a given problem size.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115424278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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