Advances in silicon carbide MOS technology

Abstract

This paper presents recent advances in the development of MOS power devices fabricated in silicon carbide. In particular it focuses on the quality of the interface between the oxide and the semiconductor. This is particularly important as it has a serious detrimental effect on MOSFET performance when excessive interface states exist. Careful growth and characterisation of a number of samples have been performed, resulting in samples with the best interface state density reported to date.