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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)最新文献

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Thyristor-based integrated switch structures for repetitive pulse current generation 基于晶闸管的重复脉冲电流产生集成开关结构
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003173
E. D. Kim, C. L. Zhang, S. C. Kim, K. Seo, U. Bahng
{"title":"Thyristor-based integrated switch structures for repetitive pulse current generation","authors":"E. D. Kim, C. L. Zhang, S. C. Kim, K. Seo, U. Bahng","doi":"10.1109/MIEL.2002.1003173","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003173","url":null,"abstract":"Device structures and their manufacturing process for a thyristor-based capacitor-discharging circuit applicable to low-frequency pulse current generation were studied in this paper. Two different device structures were compared, focusing on the design of diode to trigger the main thyristor. Substitution of the Zener diode with an avalanche diode in the equivalent circuit can give a more stable pulse-energy/temperature property. Simulation results show that a shallower junction for the avalanche diode can result in important improvement in the manufacturing process as well as help stable operation at elevated temperatures.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123104248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Top surface imaging lithography processes for I-line resists using liquid-phase silylation 使用液相硅基化的i线抗蚀剂顶表面成像光刻工艺
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003307
K. Arshak, M. Mihov, A. Arshak, D. McDonagh
{"title":"Top surface imaging lithography processes for I-line resists using liquid-phase silylation","authors":"K. Arshak, M. Mihov, A. Arshak, D. McDonagh","doi":"10.1109/MIEL.2002.1003307","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003307","url":null,"abstract":"In this paper, liquid-phase silylation process for Top Surface Imaging Lithography systems incorporating e-beam exposure has been experimentally investigated using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50/spl mu/C/cm/sup 2/ at 30keV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116657964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An improvable ferroelectric tactile sensor with acoustic running wave 一种改进的声行波铁电触觉传感器
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003191
V. Todorova, M. Mladenov
{"title":"An improvable ferroelectric tactile sensor with acoustic running wave","authors":"V. Todorova, M. Mladenov","doi":"10.1109/MIEL.2002.1003191","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003191","url":null,"abstract":"This work treats the known construction of tactile array sensors based on ferropiezoceramic materials. Some theoretical features of the physical phenomena of the excitation and moving of a running bulk acoustic wave (RBAW) as information carrier in the active array substrate are discussed. The authors' idea is to develop a tactile sensor array together with the primary data processing device as a hybrid micro system. For this purpose the authors assess the opportunities for transition from the array systems, with sizes of sensitive elements in the millimeter range, to the integrated tactile information systems with sensitive element sizes in the micron range. The physical processes in the active ferropiezoceramic substrate of a tactile microsensor have been studied by computer simulation with the two- and one-dimensional mathematical models. This allows improved construction of the tactile array sensor for further integration into the tactile microsystem.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120967154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Clocking in multi-GHz environment 多ghz环境下的时钟
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003320
V. Oklobdzija
{"title":"Clocking in multi-GHz environment","authors":"V. Oklobdzija","doi":"10.1109/MIEL.2002.1003320","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003320","url":null,"abstract":"An overview of clocking and design of clocked storage elements is presented. Systematic design of Flip-Flop is explained as well as \"time borrowing\" and absorption of clock uncertainties. We show how different clocked storage elements should be compared against each other. The issues related to power consumption and low-power design are presented.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121091609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Symmetrical thick film EMI/RFI filters 对称厚膜EMI/RFI滤波器
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003211
V. Desnica, L. Zivanov, O. Aleksic, M. Lukovic
{"title":"Symmetrical thick film EMI/RFI filters","authors":"V. Desnica, L. Zivanov, O. Aleksic, M. Lukovic","doi":"10.1109/MIEL.2002.1003211","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003211","url":null,"abstract":"Thick film technology using a well-known concept is presented as a workable approach for integration of passive components. This work states seventeen (17) different symmetrical EMI/RFI (electromagnetic interference/radio frequency interference) filter designs. Attenuation and Smith charts of symmetrical EMI/RFI filters are measured on network analyzer in the range of 1MHz to 3 GHz.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123331193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Power saving modes in modern microcontroller design and chip diagnostics 现代微控制器设计和芯片诊断中的节能模式
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003327
S. Jankovic, D. Maksimovic
{"title":"Power saving modes in modern microcontroller design and chip diagnostics","authors":"S. Jankovic, D. Maksimovic","doi":"10.1109/MIEL.2002.1003327","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003327","url":null,"abstract":"This paper is targeting some of the most important problems in modern microcontroller-on-chip design: low power consumption and efficient chip diagnostics. A case study of a microcontroller device is presented. Applied system-level techniques for dynamic power saving are described. Chip diagnostic methods are developed that are based on measuring of the supply current in different power saving modes.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125435663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A consideration of fabrication-induced imperfections in photonic crystals for optical frequencies 光学频率光子晶体中制造诱导缺陷的考虑
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003195
Z. Jakšić, O. Jakšić, A. Vujanic, Z. Djuric, R. Petrovic, D. Randjelović
{"title":"A consideration of fabrication-induced imperfections in photonic crystals for optical frequencies","authors":"Z. Jakšić, O. Jakšić, A. Vujanic, Z. Djuric, R. Petrovic, D. Randjelović","doi":"10.1109/MIEL.2002.1003195","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003195","url":null,"abstract":"We analyze fabrication-induced imperfections and disorder in our photonic crystals (PC) fabricated by micro-system technologies. Based on a correspondence between holograms and photonic crystals, we introduce technological figures of merit valid for arbitrary PC structures. We use these figures of merit to analyze a practical example of a 1D PC structure. For this purpose, we designed our PCs for the middle-wavelength infrared range using the transfer matrix technique and fabricated them in silicon/silica using RF sputtering. We used scanning electron microscopy to determine the cross-sectional geometrical parameters of PCs and to find their deviations from the designed values. Fourier infrared spectroscopy was used to measure spectral transmittance of the samples. The observed imperfections result in spectral transmission curves deviating from the designed characteristics, and reduce overall transmission by scattering. The presented analysis enables the prediction of attainable quality of PCs. The approach is applicable to 1D, 2D or 3D photonic crystals.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126602221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phonon participation in superlattice heat capacity 超晶格热容中的声子参与
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003217
J. Šetrajčić, S. Jaćimovski, D. Mirjanić
{"title":"Phonon participation in superlattice heat capacity","authors":"J. Šetrajčić, S. Jaćimovski, D. Mirjanić","doi":"10.1109/MIEL.2002.1003217","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003217","url":null,"abstract":"Phonon spectra as well as thermodynamic characteristics of superlattices are analyzed using the method of two-time dependent Green's functions. The internal energy of the system and specific heat are determined. The temperature related behaviour of the specific heat of a superlattice is compared to specific heats of bulk structures and thin films. It has been shown that, at extremely low temperatures, superlattice and film specific heats are practically equal and considerably lower than the specific heat of bulk sample.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116085383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A diagram technique for nonequilibrium processes in semiconductor microstructures 半导体微结构非平衡过程的图解技术
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003225
G. Zebrev
{"title":"A diagram technique for nonequilibrium processes in semiconductor microstructures","authors":"G. Zebrev","doi":"10.1109/MIEL.2002.1003225","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003225","url":null,"abstract":"The development of submicron semiconductor devices demands a clear and general description of nonequilibrium phenomena in micro structures. To describe electronic transport in these new submicron structures, in many cases we cannot resort to a classical Boltzmann description but must include the quantum-mechanical aspects of electronic transport. In the time-reversible Schroedinger equation for an electron state, the state does not change its eigenenergy during its temporal evolution. Accordingly, this is a pure state description, which cannot treat electron-phonon and electron-electron interaction. Due to the statistical nature of kinetic processes, a definite conserved Hamiltonian for the Schroedinger equation cannot be specified and quantum device should be considered as a statistical system, characterized by the density matrix or Green's function. The objective of this work is to develop such based on general principles of gauge invariance.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122932000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pre-power amplifier for 5.2-5.8 GHz band 5.2-5.8 GHz频段前置功率放大器
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003341
B. Kelleci, O. Palamutcuoglu
{"title":"Pre-power amplifier for 5.2-5.8 GHz band","authors":"B. Kelleci, O. Palamutcuoglu","doi":"10.1109/MIEL.2002.1003341","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003341","url":null,"abstract":"The design of a low-voltage and broadband pre-power amplifier is presented. The purpose of the pre-power amplifier is to separate the external power amplifier and internal mixer to deliver the required input power to the power amplifier. The amplifier is designed in 0.35 /spl mu/m SiGe technology. Differential topology is used in order to reduce the effect of the bonding inductances. The amplifier is optimized for maximum output power and maximum yield. The simulation results of the amplifier show 2 dBm output power with 13 dB gain. The gain variation is less than 0.5 dB in-band. The output power is always more than 0 dBm after characterization.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122190533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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