使用液相硅基化的i线抗蚀剂顶表面成像光刻工艺

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003307

K. Arshak, M. Mihov, A. Arshak, D. McDonagh

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引用次数: 2

摘要

本文利用FT-IR光谱、UV光谱、SIM光谱和SEM横截面对电子束曝光的顶表面成像光刻系统的液相硅基化过程进行了实验研究。介绍了不同硅烷化剂对Shipley SPR505A抗蚀剂体系的影响，包括抗蚀剂的UV暴露区和电子束交联区。结果表明，在30keV下，50/spl μ /C/cm/sup 2/的电子束剂量足以交联抗蚀剂，防止硅基化。与其他两种药物相比，HMCTS的硅基化对比度最高(11:1)。发现SPR505A抗蚀剂中的硅掺入遵循案例II扩散机制。

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Top surface imaging lithography processes for I-line resists using liquid-phase silylation

In this paper, liquid-phase silylation process for Top Surface Imaging Lithography systems incorporating e-beam exposure has been experimentally investigated using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50/spl mu/C/cm/sup 2/ at 30keV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms.

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来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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