E. D. Kim, C. L. Zhang, S. C. Kim, K. Seo, U. Bahng
{"title":"Thyristor-based integrated switch structures for repetitive pulse current generation","authors":"E. D. Kim, C. L. Zhang, S. C. Kim, K. Seo, U. Bahng","doi":"10.1109/MIEL.2002.1003173","DOIUrl":null,"url":null,"abstract":"Device structures and their manufacturing process for a thyristor-based capacitor-discharging circuit applicable to low-frequency pulse current generation were studied in this paper. Two different device structures were compared, focusing on the design of diode to trigger the main thyristor. Substitution of the Zener diode with an avalanche diode in the equivalent circuit can give a more stable pulse-energy/temperature property. Simulation results show that a shallower junction for the avalanche diode can result in important improvement in the manufacturing process as well as help stable operation at elevated temperatures.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Device structures and their manufacturing process for a thyristor-based capacitor-discharging circuit applicable to low-frequency pulse current generation were studied in this paper. Two different device structures were compared, focusing on the design of diode to trigger the main thyristor. Substitution of the Zener diode with an avalanche diode in the equivalent circuit can give a more stable pulse-energy/temperature property. Simulation results show that a shallower junction for the avalanche diode can result in important improvement in the manufacturing process as well as help stable operation at elevated temperatures.