{"title":"5.2-5.8 GHz频段前置功率放大器","authors":"B. Kelleci, O. Palamutcuoglu","doi":"10.1109/MIEL.2002.1003341","DOIUrl":null,"url":null,"abstract":"The design of a low-voltage and broadband pre-power amplifier is presented. The purpose of the pre-power amplifier is to separate the external power amplifier and internal mixer to deliver the required input power to the power amplifier. The amplifier is designed in 0.35 /spl mu/m SiGe technology. Differential topology is used in order to reduce the effect of the bonding inductances. The amplifier is optimized for maximum output power and maximum yield. The simulation results of the amplifier show 2 dBm output power with 13 dB gain. The gain variation is less than 0.5 dB in-band. The output power is always more than 0 dBm after characterization.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Pre-power amplifier for 5.2-5.8 GHz band\",\"authors\":\"B. Kelleci, O. Palamutcuoglu\",\"doi\":\"10.1109/MIEL.2002.1003341\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of a low-voltage and broadband pre-power amplifier is presented. The purpose of the pre-power amplifier is to separate the external power amplifier and internal mixer to deliver the required input power to the power amplifier. The amplifier is designed in 0.35 /spl mu/m SiGe technology. Differential topology is used in order to reduce the effect of the bonding inductances. The amplifier is optimized for maximum output power and maximum yield. The simulation results of the amplifier show 2 dBm output power with 13 dB gain. The gain variation is less than 0.5 dB in-band. The output power is always more than 0 dBm after characterization.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":\"164 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003341\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003341","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design of a low-voltage and broadband pre-power amplifier is presented. The purpose of the pre-power amplifier is to separate the external power amplifier and internal mixer to deliver the required input power to the power amplifier. The amplifier is designed in 0.35 /spl mu/m SiGe technology. Differential topology is used in order to reduce the effect of the bonding inductances. The amplifier is optimized for maximum output power and maximum yield. The simulation results of the amplifier show 2 dBm output power with 13 dB gain. The gain variation is less than 0.5 dB in-band. The output power is always more than 0 dBm after characterization.