{"title":"机械对移动栅极MOS电容器电学特性的影响","authors":"L. Dobrescu, D. Dobrescu, A. Rusu, C. Ravariu","doi":"10.1109/MIEL.2002.1003181","DOIUrl":null,"url":null,"abstract":"This paper presents the model for an electromechanical variable capacitor designed as an MOS capacitor with a beam. It studies the influences of the beam on the electrical characteristics of the capacitor.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Mechanical influences on the electrical characteristics of the mobile gate MOS capacitors\",\"authors\":\"L. Dobrescu, D. Dobrescu, A. Rusu, C. Ravariu\",\"doi\":\"10.1109/MIEL.2002.1003181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the model for an electromechanical variable capacitor designed as an MOS capacitor with a beam. It studies the influences of the beam on the electrical characteristics of the capacitor.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mechanical influences on the electrical characteristics of the mobile gate MOS capacitors
This paper presents the model for an electromechanical variable capacitor designed as an MOS capacitor with a beam. It studies the influences of the beam on the electrical characteristics of the capacitor.