Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing

E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi
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引用次数: 3

Abstract

We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem and MIS structures with Ta/sub 2/O/sub 5/ insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta/sub 2/O/sub 5//p-Si interface becomes essentially ordered.
微波处理增强Ta/sub 2/O/sub 5/-p-Si异质体系的结构-相有序性
本文综合研究了磁控管微波辐射(频率为2.45 GHz,辐照度为1.5 W/cm/sup 2/,处理时间为10 s)对Ta/sub 2/O/sub 5/-p-Si异质体系和Ta/sub 2/O/sub 5/绝缘体厚度为16- 24nm的MIS结构的有序效应。结果表明,用微波处理所研究的样品可以得到实际松弛的异质系统,其参数与MIS结构的特征相关。在这种情况下,Ta/sub 2/O/sub 5/ p-Si界面基本上是有序的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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