/spl γ射线对铜-酞菁厚膜光学和电性能的影响

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003209

A. Arshak, S.M. Zleetni, K. Arshak, J. Harris

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引用次数: 2

摘要

采用丝网印刷技术制备了Ag/CuPc/Ag夹层结构的电容器件。研究了/spl γ /-辐射对其光学和电学性能的影响，用于剂量学应用。CuPc厚膜辐照后，光学带隙的能量值呈不规则的轻微升高。打印(未暴露于/spl伽马射线)和辐照Ag/CuPc/Ag器件显示出肖特基传导机制。CuPc厚膜的吸光度和电容对/spl γ /-辐照表现出高度一致的线性响应。

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Effect of /spl gamma/-rays on the optical and electrical properties of copper-phthalocyanine thick films

Capacitive devices with Ag/CuPc/Ag sandwich structure were fabricated using screen-printing. The effects of /spl gamma/-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The energy values of the optical band gap showed irregular slight increase when the CuPc thick films were irradiated. The as-printed (unexposed to /spl gamma/-rays) and irradiated Ag/CuPc/Ag devices demonstrated a Schottky conduction mechanism. The absorbance and the capacitance of the CuPc thick films exhibited highly consistent linear response to the exposure of /spl gamma/-radiation.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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