Semiconductor Science and Technology最新文献_第8页

Solitary Extramedullary Plasmacytoma of Nasal Cavity. 孤立性鼻腔髓外浆细胞瘤。

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2023-12-01 Epub Date: 2023-07-10 DOI: 10.1007/s12070-023-04061-0

Utkal Priyadarshi Mishra, Ashish Kumar Verma, Jai Kumar Chaurasia

引用次数: 0

α-In2Se3/Nb-doped MoSh2 heterojunction: a first-principles study α-In2Se3/掺铌 MoSh2 异质结：第一原理研究

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2023-11-24 DOI: 10.1088/1361-6641/ad0dac

Xiurui Lv, Guipeng Liu, Bangyao Mao, Heyuan Huang, Guijuan Zhao, Jianhong Yang

{"title":"α-In2Se3/Nb-doped MoSh2 heterojunction: a first-principles study","authors":"Xiurui Lv, Guipeng Liu, Bangyao Mao, Heyuan Huang, Guijuan Zhao, Jianhong Yang","doi":"10.1088/1361-6641/ad0dac","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0dac","url":null,"abstract":"The <italic toggle=\"yes\">α</italic>-In2Se3 material is a two-dimensional ferroelectric semiconductor whose structural asymmetry gives it spontaneous polarization properties, and exhibits a direct bandgap structure when it is multilayered. <italic toggle=\"yes\">α</italic>-In2Se3 is an n-type semiconductor, which is usually used in experiments to form heterojunctions with p-type semiconductors to prepare photodetectors. In this paper, we designed <italic toggle=\"yes\">α</italic>-In2Se3/Nb-doped MoS2 heterojunction, because Nb doping is a good p-type dopant for MoS2. Our research shows that: the heterojunction exhibits type-Ⅱ band alignment; the band offset can be changed by the out-of-plane polarization direction; doping can modulate the Fermi energy level position of MoS2 and thus further modulate the band alignment and band offset. The <italic toggle=\"yes\">α</italic>-In2Se3/Nb-doped MoS2 heterojunction is expected to be applied to the field of photodetectors, and we proposed a method to adjust the band alignment of the heterojunction by adjusting the doping concentrations.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"125 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Droop and light extraction of InGaN-based red micro-light-emitting diodes 基于 InGaN 的红色微型发光二极管的下垂和光萃取

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2023-11-21 DOI: 10.1088/1361-6641/ad0b88

Jeong-Hwan Park, Markus Pristovsek, Cai Wentao, Takeru Kumabe, Soo-Young Choi, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano

{"title":"Droop and light extraction of InGaN-based red micro-light-emitting diodes","authors":"Jeong-Hwan Park, Markus Pristovsek, Cai Wentao, Takeru Kumabe, Soo-Young Choi, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano","doi":"10.1088/1361-6641/ad0b88","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0b88","url":null,"abstract":"In this letter, we investigate the impact of periphery, width, length and area on the external quantum efficiency (EQE) of stripe-type InGaN-based red micro-light-emitting diodes (<italic toggle=\"yes\">µ</italic>LEDs). A longer periphery resulted in a higher light extraction efficiency (<inline-formula>\u0000<tex-math><?CDATA ${eta _{text{e}}}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>η</mml:mi><mml:mrow><mml:mtext>e</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"sstad0b88ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>) via the sidewall regardless of the area of the <italic toggle=\"yes\">µ</italic>LEDs. However, as the injection current increased a somewhat larger efficiency droop was observed at the longer periphery due to current crowding. Additionally, larger <italic toggle=\"yes\">µ</italic>LEDs experienced more self-heating than smaller ones, resulting in a red shift of wavelengths and a larger efficiency droop. When the current density exceeded 100 A cm−2, the EQE ratio of smaller-area <italic toggle=\"yes\">μ</italic>LEDs to larger-area ones increased significantly due to the difference in efficiency droop. Besides, a short light propagation length and a long emission width yielded a higher <inline-formula>\u0000<tex-math><?CDATA ${eta _{text{e}}}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>η</mml:mi><mml:mrow><mml:mtext>e</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"sstad0b88ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>. Hence, the periphery, width, length and area of the <italic toggle=\"yes\">µ</italic>LEDs determine EQE, which provides insight into the pixel design of <italic toggle=\"yes\">µ</italic>LED displays.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"26 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation 采用双层电极横向调制抑制杂散模式的高性能SAW谐振器

4区工程技术

Semiconductor Science and Technology Pub Date : 2023-11-13 DOI: 10.1088/1361-6641/ad06c0

Shengkuo Zhang, Hongliang Wang, Peng Zhang, Gang Cao

{"title":"High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation","authors":"Shengkuo Zhang, Hongliang Wang, Peng Zhang, Gang Cao","doi":"10.1088/1361-6641/ad06c0","DOIUrl":"https://doi.org/10.1088/1361-6641/ad06c0","url":null,"abstract":"Abstract This work aims to solve the problem of tradeoff between various properties and spurious mode suppression in surface acoustic wave (SAW) resonators. A high-angle rotated Y -cut LiNbO 3 (LN)/SiO 2 /Si multilayered structure was proposed to balance the electromechanical coupling coefficient ( K 2 ) and temperature coefficient of frequency ( TCF ), and the propagation characteristics of Rayleigh mode were simulated by the finite element method. For the widely existing spurious modes, the shear-horizontal wave and longitudinal modes were eliminated by optimizing the cut angle of LN and electrode thickness, and a method of double-layer electrode transverse modulation was proposed to suppress the transverse modes. This method reduces the mass loading effect by replacing the electrode from Cu to Cu/Al. Moreover, the Al thicknesses in different regions are changed to perform the transverse modulation, and thus a widespread suppression of transverse modes is achieved by exciting the piston mode and enhancing the energy constraint, with a significant improvement on quality factor at the resonance frequency. Eventually, the spurious-free SAW resonator has the K 2 of 9.5% and the TCF close to zero. This work provides a feasible scheme for the design of high performance SAW resonators with spurious mode suppression.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"60 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134993473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the synthesis, structure, and optoelectronic properties of lead-free halide perovskite Cs3Bi2I9 in single crystal and polycrystalline forms 探索无铅卤化物钙钛矿Cs3Bi2I9单晶和多晶的合成、结构和光电性能

4区工程技术

Semiconductor Science and Technology Pub Date : 2023-11-10 DOI: 10.1088/1361-6641/ad08dd

Sujith P, Saidi Reddy Parne, Abhinav T

{"title":"Exploring the synthesis, structure, and optoelectronic properties of lead-free halide perovskite Cs3Bi2I9 in single crystal and polycrystalline forms","authors":"Sujith P, Saidi Reddy Parne, Abhinav T","doi":"10.1088/1361-6641/ad08dd","DOIUrl":"https://doi.org/10.1088/1361-6641/ad08dd","url":null,"abstract":"Abstract In recent years, caesium bismuth iodide (Cs 3 Bi 2 I 9 ), a lead (Pb)-free halide perovskite, has drawn more attention as a potential material than traditional semiconductor materials due to its lack of Pb toxicity and its outstanding stability against atmospheric air and moisture. Herein, the inverse temperature crystallization method is adopted to grow high-quality hexagonal-phase Cs 3 Bi 2 I 9 perovskite single crystals. Furthermore, a Cs 3 Bi 2 I 9 perovskite thin film is fabricated by a solution process using the two-step spin coating technique. A collective analysis of the structural properties, surface morphology, thermal stability, phase transition, and optoelectronic properties of these single crystal and polycrystalline thin films provides a comprehensive understanding and design strategy to develop environmentally stable, Pb-free, and high-performance photovoltaic and optoelectronic devices based on Cs 3 Bi 2 I 9 perovskite. The findings of this study contribute to the advancement of perovskite-based technologies and pave the way for their successful integration into the renewable energy and optoelectronics industries.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"65 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of silver doping on electrical characteristics of Aluminum/HfO₂/p-silicon metal-oxide-semiconductor devices 银掺杂对铝/HfO2/对硅金属氧化物半导体器件电特性的影响

4区工程技术

Semiconductor Science and Technology Pub Date : 2023-11-10 DOI: 10.1088/1361-6641/ad08de

Arif Demir, Osman Pakma, Ishak Afsin Kariper, Şadan Özden, Nejmettin Avcı

{"title":"Effect of silver doping on electrical characteristics of Aluminum/HfO2/p-silicon metal-oxide-semiconductor devices","authors":"Arif Demir, Osman Pakma, Ishak Afsin Kariper, Şadan Özden, Nejmettin Avcı","doi":"10.1088/1361-6641/ad08de","DOIUrl":"https://doi.org/10.1088/1361-6641/ad08de","url":null,"abstract":"Abstract In this study, undoped and silver (Ag) doped hafnium oxide (HfO 2 ) thin films were prepared by sol-gel dipping method and their effect as an interface material in a p-Si-based metal-oxide-semiconductor device was investigated for the first time. The structural effects of Ag doping were investigated using x-ray diffraction patterns. Al/HfO 2 :Ag/p-Si devices were fabricated using these films, and their electrical properties were characterized by measuring current-voltage ( I – V ) curves at room temperature. The ideality factor values of the devices decreased from 4.09 to 2.20 as the Ag doping ratio increased. Simultaneously, the barrier height values increased from 0.60 eV to 0.81 eV. The calculated series resistance values, determined by two different methods, demonstrated that the lowest resistance values were obtained at a 1% Ag doping ratio. Furthermore, the interface state densities were found to vary with the doping ratio. The improvement in electrical parameters resulting from Ag doping can be attributed to the reduction in molar volume due to structural phase transformation. The decrease in the ideality factor suggests enhanced carrier transport efficiency, while the increase in barrier height indicates improved energy band alignment at the metal/semiconductor interface.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"65 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Challenges with tunneled dialysis catheter placement with subcutaneous emphysema. 隧道式透析导管置入皮下气肿的挑战。

4区工程技术

Semiconductor Science and Technology Pub Date : 2023-11-01 Epub Date: 2022-03-27 DOI: 10.1177/11297298221085421

Michael George, James Lane, Tushar J Vachharajani

引用次数: 0

Characterization of PECVD Si3N4 thin film in multiple oxide-nitride stack for 3D-NAND flash memory 3D-NAND快闪记忆体中多重氧化氮堆叠PECVD Si3N4薄膜的表征

4区工程技术

Semiconductor Science and Technology Pub Date : 2023-10-31 DOI: 10.1088/1361-6641/ad03fc

Jaekeun Baek, Surin An, Ahhyun Park, Ki-Yeon Kim, Sang Jeen Hong

引用次数: 0

Simplified top-down fabrication of sub-micron silicon nanowires 简化自顶向下的亚微米硅纳米线制造

4区工程技术

Semiconductor Science and Technology Pub Date : 2023-10-27 DOI: 10.1088/1361-6641/ad0791

Sina Zare Pakzad, Seckin Akinci, Mehrdad Karimzadehkhouei, B. Erdem Alaca

{"title":"Simplified top-down fabrication of sub-micron silicon nanowires","authors":"Sina Zare Pakzad, Seckin Akinci, Mehrdad Karimzadehkhouei, B. Erdem Alaca","doi":"10.1088/1361-6641/ad0791","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0791","url":null,"abstract":"Abstract Silicon nanowires are among the most promising nanotechnology building blocks in innovative devices with numerous applications as nanoelectromechanical systems. Downscaling the physical size of these devices and optimization of material functionalities by engineering their structure are two promising strategies for further enhancement of their performance for integrated circuits and future-generation sensors and actuators. Integration of silicon nanowires as transduction elements for inertial sensor applications is one prominent example for an intelligent combination of such building blocks for multiple functionalities within a single sensor. Currently, the efforts in this field are marred by the lack of batch fabrication techniques compatible with semiconductor manufacturing. Development of new fabrication techniques for such one-dimensional structures will eliminate the drawbacks associated with assembly issues. The current study aims to explore the limits of batch fabrication for a single nanowire within a thick Si layer. The objective of the current work goes beyond the state of the art with significant improvements to the recent viable approach on the monolithic fabrication of nanowires, which was based on a conformal side-wall coating for the protection of the nanoscale silicon line followed by deep etch of the substrate transforming the protected layer into a silicon nanowire. The newly developed fabrication approach eliminates side wall protection and thereby reduces both process complexity and process temperature. The technique yields promising results with possible improvements for future micro and nanofabrication processes.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"114 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136318959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device 非易失性双极电阻开关存储器件用NiFe2O4纳米颗粒

4区工程技术

Semiconductor Science and Technology Pub Date : 2023-10-19 DOI: 10.1088/1361-6641/ad04eb

Rohini P Patil, Ankita Shrikant Nikam, Shivanand Teli, Ashkan Vakilipour Takaloo, Rajanish K. Kamat, Tukaram D. Dongale, Pradip Kamble, Kalyanrao Garadkar K M

{"title":"NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device","authors":"Rohini P Patil, Ankita Shrikant Nikam, Shivanand Teli, Ashkan Vakilipour Takaloo, Rajanish K. Kamat, Tukaram D. Dongale, Pradip Kamble, Kalyanrao Garadkar K M","doi":"10.1088/1361-6641/ad04eb","DOIUrl":"https://doi.org/10.1088/1361-6641/ad04eb","url":null,"abstract":"Abstract The existing work addresses the chemical synthesis of NiFe2O4 (NFO) nanoparticles (NPs) with the help of PVP as a capping agent and NiFe2O4 NPs are used as a switching layer material in memory device. For the confirmation of the materials phase, composition, and optical properties, various analytical techniques were used. By the support of the X-ray diffraction (XRD) technique, crystal structure (cubic spinel) and crystallite size (20.12 nm) were determined. Field emission scanning electron microscopy (FE-SEM) was used to confirm the material morphology. Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FT-IR) were applied to identify the of NiFe2O4 NPs functional groups. For the non-volatile memory device , Ag/NFO/FTO was fabricated, which shows bipolar resistive switching with good endurance (104 cycles) and retention (6 x 103 s). The I–V characteristics of the actual device indicates that the deposition order of the film is a decisive part in the device performance. Moreover, the conduction and resistive switching mechanism of the device were also carried out.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135728805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0