NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device

Abstract The existing work addresses the chemical synthesis of NiFe2O4 (NFO) nanoparticles (NPs) with the help of PVP as a capping agent and NiFe2O4 NPs are used as a switching layer material in memory device. For the confirmation of the materials phase, composition, and optical properties, various analytical techniques were used. By the support of the X-ray diffraction (XRD) technique, crystal structure (cubic spinel) and crystallite size (20.12 nm) were determined. Field emission scanning electron microscopy (FE-SEM) was used to confirm the material morphology. Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FT-IR) were applied to identify the of NiFe2O4 NPs functional groups. For the non-volatile memory device , Ag/NFO/FTO was fabricated, which shows bipolar resistive switching with good endurance (104 cycles) and retention (6 x 103 s). The I–V characteristics of the actual device indicates that the deposition order of the film is a decisive part in the device performance. Moreover, the conduction and resistive switching mechanism of the device were also carried out.