Exploring the synthesis, structure, and optoelectronic properties of lead-free halide perovskite Cs3Bi2I9 in single crystal and polycrystalline forms

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-11-10 DOI:10.1088/1361-6641/ad08dd

Sujith P, Saidi Reddy Parne, Abhinav T

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Abstract

Abstract In recent years, caesium bismuth iodide (Cs 3 Bi 2 I 9 ), a lead (Pb)-free halide perovskite, has drawn more attention as a potential material than traditional semiconductor materials due to its lack of Pb toxicity and its outstanding stability against atmospheric air and moisture. Herein, the inverse temperature crystallization method is adopted to grow high-quality hexagonal-phase Cs 3 Bi 2 I 9 perovskite single crystals. Furthermore, a Cs 3 Bi 2 I 9 perovskite thin film is fabricated by a solution process using the two-step spin coating technique. A collective analysis of the structural properties, surface morphology, thermal stability, phase transition, and optoelectronic properties of these single crystal and polycrystalline thin films provides a comprehensive understanding and design strategy to develop environmentally stable, Pb-free, and high-performance photovoltaic and optoelectronic devices based on Cs 3 Bi 2 I 9 perovskite. The findings of this study contribute to the advancement of perovskite-based technologies and pave the way for their successful integration into the renewable energy and optoelectronics industries.

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探索无铅卤化物钙钛矿Cs3Bi2I9单晶和多晶的合成、结构和光电性能

近年来，碘化铋铯(c3bi2i9)作为一种无铅(Pb)卤化物钙钛矿，由于其无铅毒性和对大气空气和水分的优异稳定性，作为一种潜在的材料受到了比传统半导体材料更多的关注。本文采用反温度结晶法，生长出高质量的六方相c3bi2i9钙钛矿单晶。此外，采用两步自旋镀膜技术，采用溶液法制备了c3bi2i9钙钛矿薄膜。通过对这些单晶和多晶薄膜的结构特性、表面形貌、热稳定性、相变和光电子特性的综合分析，为开发基于c3bi2i9钙钛矿的环境稳定、无铅、高性能光伏和光电子器件提供了全面的理解和设计策略。这项研究的发现有助于钙钛矿技术的进步，并为其成功整合到可再生能源和光电子行业铺平了道路。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.