Semiconductor Science and Technology最新文献

{"title":"Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates","authors":"Yingqiang Wei, Jinghe Wei, Wei Zhao, Suzhen Wu, Yidan Wei, Meijie Liu, Zhiyuan Sui, Ying Zhou, Yuqi Li, Hong Chang, Fei Ji, Weibin Wang, Lijun Yang, Guozhu Liu","doi":"10.1088/1361-6641/ad160d","DOIUrl":"https://doi.org/10.1088/1361-6641/ad160d","url":null,"abstract":"\u0000 We fabricated enhancement-mode p-GaN gate GaN HEMT with multiple field plates (MFPs) and analyzed the reliability of devices by means of simulation and experiment in this paper. The simulation of electric-field distribution indicates that the MFPs effectively weaken the electric field peak near gate to below theoretical breakdown value and smooth the electric field between the gate edge and drain-side field plate edge. The simulated electric field peak leading to the breakdown of device with MFPs at high drain voltage is located on drain edge, which is validated by experimental results. The GaN HEMTs with MFPs exhibit excellent long-term reliability under high temperature and high drain voltage, while deviations of threshold voltage and on-resistance were observed in the device subjected to drain stress. We attribute the deviations to electron accumulation and high field-assisted detrapping process in the p-GaN layer. This investigation will provide some new insight into understanding the mechanism of variations in threshold voltage and on-resistance under off-state drain stress.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"36 3","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139000115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An ultra-high-frequency memristor circuit model","authors":"Yanji Wang, Yu Wang, Yi Liu, Yanzhong Zhang, Yu Yan, Youde Hu, Xinpeng Wang, Hao Zhang, Rongqing Xu, Yi Tong","doi":"10.1088/1361-6641/ad14ed","DOIUrl":"https://doi.org/10.1088/1361-6641/ad14ed","url":null,"abstract":"\u0000 In the context of sixth-generation (6G) wireless communications technology, advanced radio-frequency (RF) switches are required to accommodate high-frequency terahertz range and complex modulation techniques. This paper proposes a flexible charge-controlled memristor model specifically designed for ultra-high-frequency applications. It describes in detail the derivation of the behavior model of the proposed memristor circuit. The memristor circuit model is built around four inverters, two multipliers, one integrator, one adder, and one differentiator. Through PSPICE simulation, the typical hysteresis loop of the memristor is thoroughly analyzed, demonstrating its suitability for use in wireless communication systems. The model exhibits a good typical hysteresis loop that operates over a wide frequency range from 100 kHz to 20 THz, meeting the specific requirements of terahertz applications. Compared to existing memristor designs, it operates at a much higher frequency. However, the zero crossing of the typical hysteresis loop deviates when the operating frequency exceeds 20 THz. Furthermore, the proposed memristor model can be customized in terms of set/reset voltage, operating frequency and R_off⁄R_on , and has been verified for use in high speed switches with switching speeds of 19.5 ps. Furthermore, this research fills the gap in ultra-high-frequency memristor modeling, offering valuable insights and guidance for the utilization of memristors in the 6G technology and ultra-high frequency fields.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"9 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139008660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions","authors":"Changjiang Xie, Yue Li, Chi Xu, Yixin Wang, Hui Cong, Chunlai Xue","doi":"10.1088/1361-6641/ad14ee","DOIUrl":"https://doi.org/10.1088/1361-6641/ad14ee","url":null,"abstract":"Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal–oxide–semiconductor compatible conditions, demonstrating low defect density, sharp and narrow x-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure CVD results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 min, the full width at half maximum (FWHM) of x-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"17 7","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138977069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation","authors":"Do Gyun An, Garam Kim, Hyunwoo Kim, Sangwan Kim, Jang Hyun Kim","doi":"10.1088/1361-6641/ad10c4","DOIUrl":"https://doi.org/10.1088/1361-6641/ad10c4","url":null,"abstract":"Artificial intelligence computing requires hardware like central processing units and graphic processing units for data processing. However, excessive heat generated during computations remains a challenge. The paper focuses on the heat issue in logic devices caused by transistor structures. To address the problem, the operational mechanism of the Junctionless Field-Effect Transistor (JLFET) is investigated. JLFET shows potential in mitigating heat-related issues and is compared to other nanosheet (ns) FETs. In the case of JL-nsFET, the change in mobility with increasing temperature is smaller compared to Con-nsFET, resulting in less susceptibility to lattice scattering and thermal resistance (<italic toggle=\"yes\">R</italic>th) in self-heating effect situation is 0.43 [K <italic toggle=\"yes\">µ</italic>W⁻¹] for Con-nsFET and 0.414 [K <italic toggle=\"yes\">µ</italic>W⁻¹] for JL-nsFET. The reason why the <italic toggle=\"yes\">R</italic>th of JL-nsFET is smaller than that of Con-nsFET is that JL-nsFET uses a source heat injection conduction mechanism and a large heat transfer area by using a bulk channel.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"56 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation","authors":"Hideto Onishi, Hajime Shirai","doi":"10.1088/1361-6641/ad14ec","DOIUrl":"https://doi.org/10.1088/1361-6641/ad14ec","url":null,"abstract":"\u0000 We investigated the reduction in the reverse-biased leakage current of Si ultrafast recovery diodes via a combined lifetime process involving Au diffusion and bulk electron-beam irradiation. The leakage current of the combined-processed diode was significantly reduced to less than one-third of that of the diode processed solely with Au diffusion, maintaining a similar switching time of 32 ns. This reduction was not achievable with the sole use of electron-beam irradiation. Deep-level transient spectroscopy revealed that the reduction in the leakage current was due to the coexistence of the deep trap level of Au (Ec-0.51 eV) and the shallow trap level of the defects (Ec-0.39 eV) generated via electron-beam irradiation as lifetime killers. By combining the deep and shallow trap levels, the lifetime of the carriers generated in the depletion layer of the reverse-biased p-n junction becomes long and consequently, the leakage current is reduced. By maintaining the trap density ratio of defects to diffused Au above 0.28, the leakage current was reduced to less than one-third of that in the solely Au-diffused diode, while maintaining a similar switching time.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"45 6","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139009815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress in modifications of g-C3N4 for photocatalytic hydrogen evolution and CO2 reduction","authors":"Garima Rana, Pooja Dhiman, Amit Kumar, Elmuez A Dawi, Gaurav Sharma","doi":"10.1088/1361-6641/ad0eea","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0eea","url":null,"abstract":"Photocatalytic H₂ evolution and CO₂ reduction are promising technologies for addressing environmental and energy issues. g-C₃N₄ is one of most promising materials to form improved catalysts because of its exceptional electrical structure, physical and chemical characteristics, and distinctive metal-free feature. This article provides a summary of current advancements in g-C₃N₄-based catalysts from innovative design approaches and their applications. Hydrogen evolution has reached 6305.18 <italic toggle=\"yes\">µ</italic>mol g⁻¹ h⁻¹ and &gt;9 h of stability using the SnS₂/g-C₃N₄ heterojunction. Additionally, the ZnO/Au/g-C₃N₄ maintains a constant CO generation rate of 689.7 mol m⁻² during the 8 h reaction. To fully understand the interior relationship of theory–structure performance on g-C₃N₄-based materials, modifications are studied simultaneously. Furthermore, the synthesis of g-C₃N₄ and g-C₃N₄-based materials, as well as their respective instances, have been reported. The reduction of CO₂ and H₂ generation is summarized. Lastly, a short overview of the present issues and potential alternatives for g-C₃N₄-based materials is provided.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"6 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving vertical GaN p–n diode performance with room temperature defect mitigation","authors":"Nahid Sultan Al-Mamun, James Gallagher, Alan G Jacobs, Karl D Hobart, Travis J Anderson, Brendan P Gunning, Robert J Kaplar, Douglas E Wolfe, Aman Haque","doi":"10.1088/1361-6641/ad10c3","DOIUrl":"https://doi.org/10.1088/1361-6641/ad10c3","url":null,"abstract":"Defect mitigation of electronic devices is conventionally achieved using thermal annealing. To mobilize the defects, very high temperatures are necessary. Since thermal diffusion is random in nature, the process may take a prolonged period of time. In contrast, we demonstrate a room temperature annealing technique that takes only a few seconds. The fundamental mechanism is defect mobilization by atomic scale mechanical force originating from very high current density but low duty cycle electrical pulses. The high-energy electrons lose their momentum upon collision with the defects, yet the low duty cycle suppresses any heat accumulation to keep the temperature ambient. For a 7 × 10⁵ A cm⁻² pulsed current, we report an approximately 26% reduction in specific on-resistance, a 50% increase of the rectification ratio with a lower ideality factor, and reverse leakage current for as-fabricated vertical geometry GaN p–n diodes. We characterize the microscopic defect density of the devices before and after the room temperature processing to explain the improvement in the electrical characteristics. Raman analysis reveals an improvement in the crystallinity of the GaN layer and an approximately 40% relaxation of any post-fabrication residual strain compared to the as-received sample. Cross-sectional transmission electron microscopy (TEM) images and geometric phase analysis results of high-resolution TEM images further confirm the effectiveness of the proposed room temperature annealing technique to mitigate defects in the device. No detrimental effect, such as diffusion and/or segregation of elements, is observed as a result of applying a high-density pulsed current, as confirmed by energy dispersive x-ray spectroscopy mapping.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficiency improvement of Cu(In(1−x)Ga x )Se2 solar cell using copper barium tin sulfide as back surface field layer and bandgap grading technique","authors":"Alok Kumar Patel, Rajan Mishra, Sanjay Kumar Soni","doi":"10.1088/1361-6641/ad0e7f","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0e7f","url":null,"abstract":"This work proposes the simulation of graded &lt;inline-formula&gt;\u0000&lt;tex-math&gt;&lt;?CDATA ${boldsymbol{Cu}}left( {{boldsymbol{I}}{{boldsymbol{n}}_{1 - {boldsymbol{x}}}}{boldsymbol{G}}{{boldsymbol{a}}_{boldsymbol{x}}}} right){boldsymbol{S}}{{boldsymbol{e}}_2}$?&gt;&lt;/tex-math&gt;\u0000&lt;mml:math overflow=\"scroll\"&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;C&lt;/mml:mi&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;u&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mfenced close=\")\" open=\"(\"&gt;&lt;mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;I&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:msub&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;n&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mn&gt;1&lt;/mml:mn&gt;&lt;mml:mo&gt;−&lt;/mml:mo&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;x&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;/mml:mrow&gt;&lt;/mml:msub&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;G&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:msub&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;a&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;x&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;/mml:msub&gt;&lt;/mml:mrow&gt;&lt;/mml:mrow&gt;&lt;/mml:mfenced&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;S&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:msub&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;e&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mn&gt;2&lt;/mml:mn&gt;&lt;/mml:msub&gt;&lt;/mml:mrow&gt;&lt;/mml:math&gt;\u0000&lt;inline-graphic xlink:href=\"sstad0e7fieqn1.gif\" xlink:type=\"simple\"&gt;&lt;/inline-graphic&gt;\u0000&lt;/inline-formula&gt;–based solar cell with copper barium tin sulfide (CBTS) compounds as a back surface field (BSF) layer using the SCAPS-1D software. The CBTS BSF layer reduces the charge carrier losses on the back contact side and creates an extra BSF that helps in extracting holes toward the back contact. To utilize the maximum spectrum absorption range, three different grading configurations were analyzed by varying the stoichiometry of &lt;inline-formula&gt;\u0000&lt;tex-math&gt;&lt;?CDATA ${boldsymbol{Cu}}left( {{boldsymbol{I}}{{boldsymbol{n}}_{1 - {boldsymbol{x}}}}{boldsymbol{G}}{{boldsymbol{a}}_{boldsymbol{x}}}} right){boldsymbol{S}}{{boldsymbol{e}}_2}$?&gt;&lt;/tex-math&gt;\u0000&lt;mml:math overflow=\"scroll\"&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;C&lt;/mml:mi&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;u&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mfenced close=\")\" open=\"(\"&gt;&lt;mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;I&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:msub&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;n&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mn&gt;1&lt;/mml:mn&gt;&lt;mml:mo&gt;−&lt;/mml:mo&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;x&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;/mml:mrow&gt;&lt;/mml:msub&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;G&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:msub&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;a&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;x&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;/mml:msub&gt;&lt;/mml:mrow&gt;&lt;/mml:mrow&gt;&lt;/mml:mfenced&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;S&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mrow&gt;&lt;mml:msub&gt;&lt;mml:mrow&gt;&lt;mml:mi mathvariant=\"bold-italic\"&gt;e&lt;/mml:mi&gt;&lt;/mml:mrow&gt;&lt;mml:mn&gt;2&lt;/mml:mn&gt;&lt;/mml:msub&gt;&lt;/mml:mrow&gt;&lt;/mml:math&gt;\u0000&lt;inline-graphic xlink:href=\"sstad0e7fieqn2.gif\" xlink:type=\"simple\"&gt;&lt;/inline-graphic&gt;\u0000&lt;/inline-formula&gt;. This grading ","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"17 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insights to the production of SnS-cubic thin films by vacuum thermal evaporation for photovoltaics","authors":"Fabiola De Bray Sánchez, M T S Nair, P K Nair","doi":"10.1088/1361-6641/ad0f4c","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0f4c","url":null,"abstract":"Thin films of SnS-CUB with a lattice constant of 11.6 Å, 32 units of SnS per cell and an optical bandgap (<italic toggle=\"yes\">E</italic>\u0000_g) of 1.7 eV (direct), are mostly produced by chemical techniques. This cubic polymorph is distinct from its orthorhombic polymorph (SnS-ORT) with an <italic toggle=\"yes\">E</italic>\u0000_g of 1.1 eV. This work is on the deposition of SnS-CUB thin films of 100–300 nm in thickness by thermal evaporation at substrate temperatures of 400 °C–475 °C on glass or on a chemically deposited SnS-CUB thin film (100 nm). Under a slow deposition rate (3 nm min⁻¹) from a SnS powder source at 900 °C, the thin film formed on a SnS-CUB film or glass substrate at 450 °C is SnS-CUB. At a substrate temperatures of 200 °C–350 °C, the thin film is of SnS-ORT. A low atomic flux and a higher substrate temperature favor the growth of SnS-CUB thin film. The <italic toggle=\"yes\">E</italic>\u0000_g of the SnS-CUB film is nearly 1.7 eV (direct gap), and that of the SnS-CUB film is 1.2 eV (indirect gap). The electrical conductivity (<italic toggle=\"yes\">σ</italic>) of SnS-CUB and SnS-ORT films are 10^–7 and 0.01 Ω^–1 cm⁻¹, respectively. A proof-of-concept solar cell of the SnS-CUB thin film showed an open circuit voltage of 0.478 V, compared with 0.283 V for the SnS-ORT solar cell. The insights to the deposition of SnS-CUB and SnS_0.45Se_0.55-CUB (<italic toggle=\"yes\">E</italic>\u0000_g, 1.57 eV; <italic toggle=\"yes\">σ</italic>, 0.02 Ω⁻¹ cm⁻¹) thin films by vacuum thermal evaporation offer new outlook for their applications.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"6 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters","authors":"M. Funato, Y. Matsuda, Y. Kawakami","doi":"10.1088/1361-6641/ad12de","DOIUrl":"https://doi.org/10.1088/1361-6641/ad12de","url":null,"abstract":"\u0000 This paper reviews the development of three-dimensional (3D) structure-controlled InGaN quantum wells (QWs) for highly efficient multiwavelength emitters without using phosphors. Specifically, two representative structures are reviewed: 3D structures composed of stable planes with low surface energies and 3D structures composed of unstable planes. In the early stage of the research, 3D structures were grown on the (0001) polar plane through the selective area growth (SAG) technique based on metalorganic vapor phase epitaxy. Because GaN cannot grow on dielectric masks, different mask patterns were used to create various 3D facetted structures composed of stable facet planes. The InGaN QW parameters depend on the facet planes, which led to polychromatic emission, including white-light emission. After polychromatic LEDs on the (0001) polar plane were demonstrated, 3D QWs and LEDs were also demonstrated on the (=1=12=2) semipolar plane through SAG. There, the (0001) facet plane was excluded; consequently, all the facet QWs showed short radiative recombination lifetimes, which are beneficial for future applications in visible-light communication. To further enhance the controllability of the emission spectra from 3D QWs or LEDs, convex-lens-shaped 3D structures have been proposed. The smooth surface of such structures is composed of unstable planes and has continuously varying crystal tilts. Because QW parameters are dependent on the crystal tilt, polychromatic emission is achieved. This method demonstrates greater flexibility of the structure design, which is expected to result in greater controllability of emission spectra.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"14 9","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138597192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}