Garima Rana, Pooja Dhiman, Amit Kumar, Elmuez A Dawi, Gaurav Sharma
{"title":"用于光催化氢气进化和二氧化碳还原的 g-C3N4 改性技术的最新进展","authors":"Garima Rana, Pooja Dhiman, Amit Kumar, Elmuez A Dawi, Gaurav Sharma","doi":"10.1088/1361-6641/ad0eea","DOIUrl":null,"url":null,"abstract":"Photocatalytic H<sub>2</sub> evolution and CO<sub>2</sub> reduction are promising technologies for addressing environmental and energy issues. g-C<sub>3</sub>N<sub>4</sub> is one of most promising materials to form improved catalysts because of its exceptional electrical structure, physical and chemical characteristics, and distinctive metal-free feature. This article provides a summary of current advancements in g-C<sub>3</sub>N<sub>4</sub>-based catalysts from innovative design approaches and their applications. Hydrogen evolution has reached 6305.18 <italic toggle=\"yes\">µ</italic>mol g<sup>−1</sup> h<sup>−1</sup> and >9 h of stability using the SnS<sub>2</sub>/g-C<sub>3</sub>N<sub>4</sub> heterojunction. Additionally, the ZnO/Au/g-C<sub>3</sub>N<sub>4</sub> maintains a constant CO generation rate of 689.7 mol m<sup>−2</sup> during the 8 h reaction. To fully understand the interior relationship of theory–structure performance on g-C<sub>3</sub>N<sub>4</sub>-based materials, modifications are studied simultaneously. Furthermore, the synthesis of g-C<sub>3</sub>N<sub>4</sub> and g-C<sub>3</sub>N<sub>4</sub>-based materials, as well as their respective instances, have been reported. The reduction of CO<sub>2</sub> and H<sub>2</sub> generation is summarized. Lastly, a short overview of the present issues and potential alternatives for g-C<sub>3</sub>N<sub>4</sub>-based materials is provided.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"6 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2023-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent progress in modifications of g-C3N4 for photocatalytic hydrogen evolution and CO2 reduction\",\"authors\":\"Garima Rana, Pooja Dhiman, Amit Kumar, Elmuez A Dawi, Gaurav Sharma\",\"doi\":\"10.1088/1361-6641/ad0eea\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photocatalytic H<sub>2</sub> evolution and CO<sub>2</sub> reduction are promising technologies for addressing environmental and energy issues. g-C<sub>3</sub>N<sub>4</sub> is one of most promising materials to form improved catalysts because of its exceptional electrical structure, physical and chemical characteristics, and distinctive metal-free feature. This article provides a summary of current advancements in g-C<sub>3</sub>N<sub>4</sub>-based catalysts from innovative design approaches and their applications. Hydrogen evolution has reached 6305.18 <italic toggle=\\\"yes\\\">µ</italic>mol g<sup>−1</sup> h<sup>−1</sup> and >9 h of stability using the SnS<sub>2</sub>/g-C<sub>3</sub>N<sub>4</sub> heterojunction. Additionally, the ZnO/Au/g-C<sub>3</sub>N<sub>4</sub> maintains a constant CO generation rate of 689.7 mol m<sup>−2</sup> during the 8 h reaction. To fully understand the interior relationship of theory–structure performance on g-C<sub>3</sub>N<sub>4</sub>-based materials, modifications are studied simultaneously. Furthermore, the synthesis of g-C<sub>3</sub>N<sub>4</sub> and g-C<sub>3</sub>N<sub>4</sub>-based materials, as well as their respective instances, have been reported. The reduction of CO<sub>2</sub> and H<sub>2</sub> generation is summarized. Lastly, a short overview of the present issues and potential alternatives for g-C<sub>3</sub>N<sub>4</sub>-based materials is provided.\",\"PeriodicalId\":21585,\"journal\":{\"name\":\"Semiconductor Science and Technology\",\"volume\":\"6 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2023-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Science and Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad0eea\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad0eea","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Recent progress in modifications of g-C3N4 for photocatalytic hydrogen evolution and CO2 reduction
Photocatalytic H2 evolution and CO2 reduction are promising technologies for addressing environmental and energy issues. g-C3N4 is one of most promising materials to form improved catalysts because of its exceptional electrical structure, physical and chemical characteristics, and distinctive metal-free feature. This article provides a summary of current advancements in g-C3N4-based catalysts from innovative design approaches and their applications. Hydrogen evolution has reached 6305.18 µmol g−1 h−1 and >9 h of stability using the SnS2/g-C3N4 heterojunction. Additionally, the ZnO/Au/g-C3N4 maintains a constant CO generation rate of 689.7 mol m−2 during the 8 h reaction. To fully understand the interior relationship of theory–structure performance on g-C3N4-based materials, modifications are studied simultaneously. Furthermore, the synthesis of g-C3N4 and g-C3N4-based materials, as well as their respective instances, have been reported. The reduction of CO2 and H2 generation is summarized. Lastly, a short overview of the present issues and potential alternatives for g-C3N4-based materials is provided.
期刊介绍:
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.