High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-11-13 DOI:10.1088/1361-6641/ad06c0

Shengkuo Zhang, Hongliang Wang, Peng Zhang, Gang Cao

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引用次数: 0

Abstract

Abstract This work aims to solve the problem of tradeoff between various properties and spurious mode suppression in surface acoustic wave (SAW) resonators. A high-angle rotated Y -cut LiNbO 3 (LN)/SiO 2 /Si multilayered structure was proposed to balance the electromechanical coupling coefficient ( K 2 ) and temperature coefficient of frequency ( TCF ), and the propagation characteristics of Rayleigh mode were simulated by the finite element method. For the widely existing spurious modes, the shear-horizontal wave and longitudinal modes were eliminated by optimizing the cut angle of LN and electrode thickness, and a method of double-layer electrode transverse modulation was proposed to suppress the transverse modes. This method reduces the mass loading effect by replacing the electrode from Cu to Cu/Al. Moreover, the Al thicknesses in different regions are changed to perform the transverse modulation, and thus a widespread suppression of transverse modes is achieved by exciting the piston mode and enhancing the energy constraint, with a significant improvement on quality factor at the resonance frequency. Eventually, the spurious-free SAW resonator has the K 2 of 9.5% and the TCF close to zero. This work provides a feasible scheme for the design of high performance SAW resonators with spurious mode suppression.

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采用双层电极横向调制抑制杂散模式的高性能SAW谐振器

摘要:本工作旨在解决表面声波(SAW)谐振器中各种特性和杂散模式抑制之间的权衡问题。为了平衡机电耦合系数(k2)和频率温度系数(TCF)，提出了一种高角度旋转Y切割linbo3 (LN)/ sio2 /Si多层结构，并采用有限元法模拟了瑞利模式的传播特性。针对广泛存在的杂散模式，通过优化LN截角和电极厚度，消除了剪切水平波和纵向模式，并提出了双层电极横向调制抑制横向模式的方法。该方法将Cu电极替换为Cu/Al电极，降低了质量负载效应。此外，通过改变不同区域的Al厚度来进行横向调制，从而通过激励活塞模式和增强能量约束来实现横向模式的广泛抑制，并显著提高了共振频率处的质量因子。最终，无杂散SAW谐振器的k2为9.5%，TCF接近于零。本工作为设计抑制杂散模式的高性能SAW谐振器提供了一种可行的方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.