Characterization of PECVD Si3N4 thin film in multiple oxide-nitride stack for 3D-NAND flash memory

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-10-31 DOI:10.1088/1361-6641/ad03fc

Jaekeun Baek, Surin An, Ahhyun Park, Ki-Yeon Kim, Sang Jeen Hong

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Abstract

Abstract 3D-NAND flash memory is currently essential in the semiconductor industry due to the interference issue between memory cells of the conventional planar type. In order to vertically stack the memory, an oxide–nitride stack structure is formed using plasma enhanced chemical vapor deposition (PECVD) equipment. Thereafter, part of the silicon nitride (Si 3 N 4 ) layer is removed by wet etching using phosphoric acid (H 3 PO 4 ) to make space for the memory cell. At this time, it is important to selectively wet etch only the Si 3 N 4 film while protecting the silicon oxide (SiO 2 ). Therefore, in this study, the process parameters that affect the etch rate in PECVD were derived, and the correlation with the hydrogen content, surface roughness, and thin film density, which are the thin film characteristics that the parameters affect, were investigated. Through the experimental results, we confirmed that hydrogen content increases according to the deposition pressure, affects the surface roughness, and can be an important factor in improving the wet etching rate.

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3D-NAND快闪记忆体中多重氧化氮堆叠PECVD Si3N4薄膜的表征

由于传统平面型存储单元之间存在干扰问题，3D-NAND闪存目前在半导体行业中是必不可少的。为了使存储器垂直堆叠，采用等离子体增强化学气相沉积(PECVD)设备形成氧化氮堆叠结构。然后，用磷酸(h3po4)湿法蚀刻去除部分氮化硅(si3n4)层，为存储单元腾出空间。此时，重要的是在保护氧化硅(sio2)的同时，选择性地湿蚀刻si3n4薄膜。因此，本研究推导了PECVD中影响蚀刻速率的工艺参数，并研究了这些参数影响的薄膜特性与氢含量、表面粗糙度和薄膜密度的相关性。通过实验结果，我们证实了氢含量随沉积压力的增加而增加，影响表面粗糙度，是提高湿法蚀刻速率的重要因素。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.