Droop and light extraction of InGaN-based red micro-light-emitting diodes

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-11-21 DOI:10.1088/1361-6641/ad0b88

Jeong-Hwan Park, Markus Pristovsek, Cai Wentao, Takeru Kumabe, Soo-Young Choi, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano

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引用次数: 0

Abstract

In this letter, we investigate the impact of periphery, width, length and area on the external quantum efficiency (EQE) of stripe-type InGaN-based red micro-light-emitting diodes (µLEDs). A longer periphery resulted in a higher light extraction efficiency (

ηe

) via the sidewall regardless of the area of the µLEDs. However, as the injection current increased a somewhat larger efficiency droop was observed at the longer periphery due to current crowding. Additionally, larger µLEDs experienced more self-heating than smaller ones, resulting in a red shift of wavelengths and a larger efficiency droop. When the current density exceeded 100 A cm⁻², the EQE ratio of smaller-area μLEDs to larger-area ones increased significantly due to the difference in efficiency droop. Besides, a short light propagation length and a long emission width yielded a higher

ηe

. Hence, the periphery, width, length and area of the µLEDs determine EQE, which provides insight into the pixel design of µLED displays.

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基于 InGaN 的红色微型发光二极管的下垂和光萃取

在这封信中，我们研究了外围、宽度、长度和面积对条纹型 InGaN 基红色微型发光二极管 (µLED) 外部量子效率 (EQE) 的影响。无论 µLED 的面积如何，外围越长，通过侧壁的光提取效率（ηe）就越高。然而，随着注入电流的增加，由于电流拥挤，在较长的外围观察到了更大的效率下降。此外，较大的 µLED 比较小的 µLED 产生更多的自热，导致波长红移和更大的效率下降。当电流密度超过 100 A cm-2 时，较小面积的 μLED 与较大面积的 μLED 的 EQE 比值会因效率下降的差异而显著增加。此外，较短的光传播长度和较长的发射宽度会产生较高的ηe。因此，μLED 的外围、宽度、长度和面积决定了 EQE，这为μLED 显示屏的像素设计提供了启示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.