NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-10-19 DOI:10.1088/1361-6641/ad04eb

Rohini P Patil, Ankita Shrikant Nikam, Shivanand Teli, Ashkan Vakilipour Takaloo, Rajanish K. Kamat, Tukaram D. Dongale, Pradip Kamble, Kalyanrao Garadkar K M

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Abstract

Abstract The existing work addresses the chemical synthesis of NiFe2O4 (NFO) nanoparticles (NPs) with the help of PVP as a capping agent and NiFe2O4 NPs are used as a switching layer material in memory device. For the confirmation of the materials phase, composition, and optical properties, various analytical techniques were used. By the support of the X-ray diffraction (XRD) technique, crystal structure (cubic spinel) and crystallite size (20.12 nm) were determined. Field emission scanning electron microscopy (FE-SEM) was used to confirm the material morphology. Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FT-IR) were applied to identify the of NiFe2O4 NPs functional groups. For the non-volatile memory device , Ag/NFO/FTO was fabricated, which shows bipolar resistive switching with good endurance (104 cycles) and retention (6 x 103 s). The I–V characteristics of the actual device indicates that the deposition order of the film is a decisive part in the device performance. Moreover, the conduction and resistive switching mechanism of the device were also carried out.

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非易失性双极电阻开关存储器件用NiFe2O4纳米颗粒

以PVP为封盖剂，化学合成了NiFe2O4纳米粒子(NPs)，并将其用作存储器件的开关层材料。为了确定材料的相、组成和光学性质，使用了各种分析技术。在x射线衍射(XRD)技术的支持下，测定了晶体结构(立方尖晶石)和晶粒尺寸(20.12 nm)。采用场发射扫描电镜(FE-SEM)对材料形貌进行了表征。利用拉曼光谱和傅里叶变换红外光谱(FT-IR)对NiFe2O4 NPs的官能团进行了鉴定。对于非易失性存储器件，制备了Ag/NFO/FTO，其双极电阻开关具有良好的续航时间(104次循环)和保持时间(6 x 103 s)。实际器件的I-V特性表明，薄膜的沉积顺序是器件性能的决定性因素。此外，还研究了该器件的导通和电阻开关机理。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.