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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

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Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon Scattering 介电环境对单层二硫化钼中电子输运的影响:筛选和远程声子散射
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241676
M. L. Van de Put, G. Gaddemane, Sanjay Gopalan, M. Fischetti
{"title":"Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon Scattering","authors":"M. L. Van de Put, G. Gaddemane, Sanjay Gopalan, M. Fischetti","doi":"10.23919/SISPAD49475.2020.9241676","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241676","url":null,"abstract":"We investigate theoretically the impact of the dielectric environment on electronic transport in monolayer MoS2. In particular, we extend our first-principles Monte Carlo method to account for the screening of the electron-phonon interaction by the free carriers in the layer and the dielectric environment. In addition, we include the effect of remote-phonon scattering induced by the surrounding dielectrics. For monolayer MoS2 on various dielectric substrates, we find that screening could improve the mobility significantly, but the inclusion of remote-phonon scattering degrades the mobility below its free-standing value. In our model, the introduction of gates in a dual-gate configuration does not appreciably decrease the remote-phonon interaction as it does in inversion layers or thicker films. However, for a double-gate field-effect transistor, we still obtain reasonable transport characteristics.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128817923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes Verilog-A单光子雪崩二极管雪崩动力学和猝灭模型
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241648
Y. Oussaiti, D. Rideau, J. Manouvrier, V. Quenette, B. Mamdy, C. Buj, J. Grebot, H. Wehbe-Alause, A. Lopez, G. Mugny, M. Agnew, E. Lacombe, M. Pala, P. Dollfus
{"title":"Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes","authors":"Y. Oussaiti, D. Rideau, J. Manouvrier, V. Quenette, B. Mamdy, C. Buj, J. Grebot, H. Wehbe-Alause, A. Lopez, G. Mugny, M. Agnew, E. Lacombe, M. Pala, P. Dollfus","doi":"10.23919/SISPAD49475.2020.9241648","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241648","url":null,"abstract":"We present a Verilog-A model accounting for the temporal avalanche buildup and its statistics in Single-Photon Avalanche Diodes (SPADs). This physics-based approach is compared to TCAD mixed-mode analyzing predictions, as well as measurements. The buildup that can be in the order of hundreds picoseconds, affects the statistical pulse width distribution, which is experimentally verified. Furthermore, we address in detail the voltage swing across the device during avalanche and its quenching, studying its impact on power consumption. This model can help a chip designer to optimize circuits for quenching the SPAD photodiode.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121106506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Performance and Leakage Analysis of Si and Ge NWFETs Using a Combined Subband BTE and WKB Approach 基于子带BTE和WKB方法的Si和Ge nwfet性能和泄漏分析
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241614
Z. Stanojević, G. Strof, Oskar Baumgartner, Gerhard Rzepa, M. Karner
{"title":"Performance and Leakage Analysis of Si and Ge NWFETs Using a Combined Subband BTE and WKB Approach","authors":"Z. Stanojević, G. Strof, Oskar Baumgartner, Gerhard Rzepa, M. Karner","doi":"10.23919/SISPAD49475.2020.9241614","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241614","url":null,"abstract":"We are the first to present a subband-BTE solver with a fully integrated source/drain-tunneling current calculation based on the WKB-approximation. The method is validated against ballistic NEGF calculations showing good agreement. An investigation of Si and Ge-based NWFETs is performed showing that intra-band source/drain-tunneling is not a concern for Si devices. For Ge-based PMOS devices however, tunneling leakage limits sensible $mathrm{L}_{mathrm{G}}-$scaling to around 20 nm.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116184315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Undoped SiGe material calibration for numerical nanosecond laser annealing simulations 数值纳秒激光退火模拟的未掺杂SiGe材料标定
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241664
A. Royet, L. Dagault, S. Kerdilès, P. Alba, J. P. Barnes, Filadelfo Cristiano, Karim Huet
{"title":"Undoped SiGe material calibration for numerical nanosecond laser annealing simulations","authors":"A. Royet, L. Dagault, S. Kerdilès, P. Alba, J. P. Barnes, Filadelfo Cristiano, Karim Huet","doi":"10.23919/SISPAD49475.2020.9241664","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241664","url":null,"abstract":"Physical parameters calibration (dielectric and alloy properties) of Si$_{1-X}$Gex alloys is presented in order to simulate the Ultra Violet-Nanosecond Laser Annealing (UV-NLA) of this material for Si/ Si$_{1-X}$Gex based MOS devices. Optical and physical parameters are extracted and modeled from experimental characterizations for several Ge concentrations and then fitted to match experimental laser annealing results. A good prediction, in terms of melt depth and melting duration, is achieved for different Ge concentrations between 20 and 40%, usually encountered in Si$_{1-X}$Gex CMOS integration process.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128264857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles study of dopant trap level and concentration in Si(110)/a-SiO2 interface Si(110)/a-SiO2界面中掺杂物陷阱水平和浓度的第一性原理研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241668
Gijae Kang, Joohyun Jeon, Junsoo Kim, H. Ahn, I. Jang, D. Kim
{"title":"First-principles study of dopant trap level and concentration in Si(110)/a-SiO2 interface","authors":"Gijae Kang, Joohyun Jeon, Junsoo Kim, H. Ahn, I. Jang, D. Kim","doi":"10.23919/SISPAD49475.2020.9241668","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241668","url":null,"abstract":"We investigate the dopant trap level and equilibrium concentration of Si(110)/a-SiO2 2 interface with a wide variety of dopants (B, C, N, Br, Cl, F and H). The electronic and atomic properties of intrinsic and extrinsic defects are analyzed using First-principles calculation. It is shown that the average trap levels for hole and electron deepen as the electronegativity of the dopant increases. Also, we applied a simple thermodynamic model to evaluate the equilibrium concentration of active trap as a function of dopant concentration at the interface. From the model it turns out that H and F completely passivate the intrinsic Pb center of Si and reduce the trap concentration, while other elements, especially N, Br and Cl, induces new trap states which amounts to several times more than the pre-existing Pb center.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134548897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS Nodes 基于材料工程的先进CMOS节点自对准单扩散破断技术优化
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241625
A. Pal, E. Bazizi, Liu Jiang, Mehdi Saremi, B. Alexander, Buvna Ayyagari-Sangamalli
{"title":"Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS Nodes","authors":"A. Pal, E. Bazizi, Liu Jiang, Mehdi Saremi, B. Alexander, Buvna Ayyagari-Sangamalli","doi":"10.23919/SISPAD49475.2020.9241625","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241625","url":null,"abstract":"Though single diffusion break (SDB) acts as an efficient area-scaling enabler for current CMOS technology nodes, it degrades devices’ variability performance, which can be mitigated by enabling self-aligned SDB (SA-SDB) technology. Unfortunately, SA-SDB causes PMOS performance degradation due to channel stress relaxation. To solve this issue, we propose material engineering of SA-SDB technology to improve PMOS performance. Using 3D-TCAD simulations, we show that by using stressed oxide for the SA-SDB cavity fill, both PMOS and NMOS device performance can be improved. Furthermore, using ring-oscillator as a representative circuit for CMOS technology evaluation, we showed that the circuit performance can be improved by 13-21% for 2-3 GPa stress in the oxide, thus enabling simultaneous area-scaling and circuit and variability performance improvement with SA-SDB technology for advanced CMOS nodes.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131436898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reactive Force-Field Molecular Dynamics Study of the Silicon-Germanium Deposition Processes by Plasma Enhanced Chemical Vapor Deposition 等离子体增强化学气相沉积硅锗过程的反应力场分子动力学研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241688
Naoya Uene, T. Mabuchi, M. Zaitsu, Shigeo Yasuhara, T. Tokumasu
{"title":"Reactive Force-Field Molecular Dynamics Study of the Silicon-Germanium Deposition Processes by Plasma Enhanced Chemical Vapor Deposition","authors":"Naoya Uene, T. Mabuchi, M. Zaitsu, Shigeo Yasuhara, T. Tokumasu","doi":"10.23919/SISPAD49475.2020.9241688","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241688","url":null,"abstract":"In order to form a SiGe thin film by chemical vapor deposition (CVD) with a suitable quality for advanced devices, the relationships between materials/process and structure/composition are needed to be clarified at the atomic level. We simulated SiGe CVD by using reactive force-field (ReaxFF) molecular dynamics simulations, especially on binary systems of SiHx + GeHx, and derived the influence of the substrate temperature and these ratios of gaseous species on the crystallinity and compositions in the thin films. The crystallinity increases as the substrate temperature increases, and the lowest crystallinity is obtained at the ratios of gaseous species 0.5 and 0.7 for the SiH3 and SiH2, respectively. As the substrate temperature increases, the hydrogen content decreases while Si and Ge content tend to increase. These trends can be seen in relevant studies. Through this simulation we successfully observe that the reactivity of gaseous species greatly affects the crystallinity and compositions in the thin films.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130511345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity 双异质结AlGaN/GaN/InGaN/δ掺杂HEMTs改善跨导线性的理论研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/sispad49475.2020.9241671
Tsung-Hsing Yu
{"title":"Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity","authors":"Tsung-Hsing Yu","doi":"10.23919/sispad49475.2020.9241671","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241671","url":null,"abstract":"The aim of this study is to propose a novel double-heterojunction high electron mobility transistor (DH-HEMT) structure, Al 0.3 Ga 0.7N/GaN/In 0.15 Ga 0.85N/ d-doped, to improve transconductance linearity. A theoretically based quasi-two-dimensional model is well calibrated with experiments and is used to project the transistor performance. It is found that a thin In 0.15 Ga 0.85N back barrier and d-doped layer significantly enhance carrier confinement and increase carrier concentration in the channel. It is the combination effect of enhanced carrier confinement and increased carrier concentration that leads to a larger voltage swing. A wider linear range of transconductance can be achieved on account of the larger voltage swing. Moreover, this novel structure not only improves the transconductance linearity but also increases its maximum transconductance and the corresponding drain current, which is beneficial to high power and high frequency applications.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115287652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling 用自旋和电荷输运模型计算磁隧道结中的转矩
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241657
S. Fiorentini, J. Ender, Mohamed Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov
{"title":"Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling","authors":"S. Fiorentini, J. Ender, Mohamed Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov","doi":"10.23919/SISPAD49475.2020.9241657","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241657","url":null,"abstract":"Spin-transfer torque based devices are among the most promising candidates for emerging nonvolatile memory. Reliable simulation tools can help understand and improve the design of such devices. In this paper, we extend the drift-diffusion approach for coupled spin and charge transport, commonly applied to determine the torque in metallic valves, to the case of magnetic tunnel junctions, which constitute the cell of modern spin-transfer torque memories. We demonstrate that, by introducing a magnetization dependent conductivity and properly choosing the spin diffusion coefficient in the tunnel barrier, the expected behavior of both, the electric current and the spin accumulation, is properly reproduced. The spin torque values’ dependence on the system parameters is investigated. As a unique set of equations is used for the entire memory cell, this constitutes the basis of an efficient finite element based approach to rigorously describe the magnetization dynamics in emerging spin-transfer torque memories.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115508237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells STT-MRAM单元中分离复杂几何结构的有效退磁场计算
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241662
J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov
{"title":"Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells","authors":"J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov","doi":"10.23919/SISPAD49475.2020.9241662","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241662","url":null,"abstract":"Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"62 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120816802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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