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Quantum Transport in Si:P δ-Layer Wires Si:P δ层导线中的量子输运
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241610
J. P. Mendez, D. Mamaluy, Xujiao Gao, E. Anderson, Deanna Campbell, J. Ivie, T. Lu, S. Schmucker, S. Misra
{"title":"Quantum Transport in Si:P δ-Layer Wires","authors":"J. P. Mendez, D. Mamaluy, Xujiao Gao, E. Anderson, Deanna Campbell, J. Ivie, T. Lu, S. Schmucker, S. Misra","doi":"10.23919/SISPAD49475.2020.9241610","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241610","url":null,"abstract":"We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128937161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Implant heating contribution to amorphous layer formation: a KMC approach 植入物加热对非晶层形成的贡献:KMC方法
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241608
P. Julliard, P. Dumas, Frederic Monsieur, F. Hilario, D. Rideau, A. Hémeryck, Fuccio Cristiano
{"title":"Implant heating contribution to amorphous layer formation: a KMC approach","authors":"P. Julliard, P. Dumas, Frederic Monsieur, F. Hilario, D. Rideau, A. Hémeryck, Fuccio Cristiano","doi":"10.23919/SISPAD49475.2020.9241608","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241608","url":null,"abstract":"The present work investigates the influence of implantation induced heating on the amorphization profile in silicon wafer. A simulation approach based on a Kinetic Monte Carlo method is compared to experimental implantations and characterizations. We demonstrate that a backside pressure cooling can be used to tune amorphous layer thickness.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125702424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation Framework 基于DTCO仿真框架的全模拟ReRAM神经形态电路优化
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241635
A. Nguyen, Hoi Nguyen, Sruthi Venimadhavan, A. Venkattraman, D. Parent, H. Wong
{"title":"Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation Framework","authors":"A. Nguyen, Hoi Nguyen, Sruthi Venimadhavan, A. Venkattraman, D. Parent, H. Wong","doi":"10.23919/SISPAD49475.2020.9241635","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241635","url":null,"abstract":"Neuromorphic inference circuits using emerging devices (e.g. ReRAM) are very promising for ultra-low power edge computing such as in Internet-of-Thing. While ReRAM synapse is used as an analog device for matrix-vector-multiplications, the neuron activation unit (e.g. ReLU) is generally digital. To further minimize its power and area consumption, fully analog neuromorphic circuits are needed. This requires Design-Technology Co-Optimization (DTCO). In this paper, we use our Software+DTCO framework for fully analog neuromorphic inference circuit optimization using ReRAM as an example. The interaction between software machine learning, ReRAM, current comparator, and ReLU are studied. It is found that the neuromorphic circuit is very robust to the variation of ReLU, which confirms the importance of DTCO simulation.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114609227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Via Size Optimization for Optimum Circuit Performance at 3 nm node 通过尺寸优化优化电路在3nm节点的最佳性能
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241685
Sushant Mittal, A. Pal, Mehdi Saremi, E. Bazizi, B. Alexander, B. Ayyagari
{"title":"Via Size Optimization for Optimum Circuit Performance at 3 nm node","authors":"Sushant Mittal, A. Pal, Mehdi Saremi, E. Bazizi, B. Alexander, B. Ayyagari","doi":"10.23919/SISPAD49475.2020.9241685","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241685","url":null,"abstract":"Via size and placement for layer-to-layer connection needs careful assessment. Small via size offers compact pitch and denser connections between metal layers, while larger via size offers reduced resistance for better performance. In this paper, an optimization scheme for via size is presented, without changing the density of via allocation. We show that increasing via CD reduces resistance, resulting in enhanced performance. However, this also results in increased capacitance between different circuit nodes, which causes degradation in performance. These two opposite effects result in an optimum via CD, which offers best performance. We also show that this optimum via CD depends on the resistivity of the via material and the dielectric constant of inter-layer dielectric (ILD) surrounding the via. Via design guidelines for TiN/Co via material and for a futuristic barrier-less metal with equivalent resistivity 1/10th} of cobalt via, is presented for different dielectric constants of surrounding dielectrics.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"323 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116443479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact modeling of gate leakage phenomenon in GaN HEMTs GaN hemt栅漏现象的紧凑建模
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241666
Kexin Li, E. Yagyu, H. Saito, K. Teo, S. Rakheja
{"title":"Compact modeling of gate leakage phenomenon in GaN HEMTs","authors":"Kexin Li, E. Yagyu, H. Saito, K. Teo, S. Rakheja","doi":"10.23919/SISPAD49475.2020.9241666","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241666","url":null,"abstract":"This paper implements a physically derived compact model of current conduction and gate leakage in AlGaN/GaN high-electron mobility transistors (HEMTs). The drain-source current conduction through the device is described using the surface potential based virtual-source model applicable for scaled gate length devices. The gate leakage model includes contributions from thermal emission (TE), trap-assisted tunneling (TAT), Poole Frenkel (PF) emission, and Fowler-Nordheim (FN) tunneling. The full I-V model is applied to fabricated AlGaN/GaN HEMTs with SiN passivation and excellent agreement of the model against measured data is demonstrated over a broad bias and temperature range from 298 K to 573 K.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129145049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule 氧化钼分子掺杂氢端金刚石的电子和光学性质的第一性原理模拟
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241630
J. McGhee, V. Georgiev
{"title":"First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule","authors":"J. McGhee, V. Georgiev","doi":"10.23919/SISPAD49475.2020.9241630","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241630","url":null,"abstract":"In this work we investigate the surface transfer doping process induced between a hydrogen-terminated (100) diamond and a metal oxide MoO3, using the Density Functional Theory (DFT) method. DFT allows us to calculate the electronic and optical properties of the hydrogen-terminated diamond (H-diamond) and establish a link between the underlying electronic structure and the charge transfer between the oxide materials and the H-diamond. Our results show that the metal oxide molecule can be described as an electron acceptor and extracts the electrons from the diamond creating 2D hole gas in the diamond surface. Hence, this metal oxide molecule acts as a p-type doping material for the diamond.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131208662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory 8-1三维半圆电荷阱闪存程序特性退化机理及对策的TCAD研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241626
N. Kariya, M. Tsuda, T. Kurusu, M. Kondo, K. Nishitani, H. Tokuhira, J. Shimokawa, Y. Yokota, H. Tanimoto, S. Onoue, Y. Shimada, T. Kato, K. Hosotani, F. Arai, M. Fujiwara, Y. Uchiyama, K. Ohuchi
{"title":"8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory","authors":"N. Kariya, M. Tsuda, T. Kurusu, M. Kondo, K. Nishitani, H. Tokuhira, J. Shimokawa, Y. Yokota, H. Tanimoto, S. Onoue, Y. Shimada, T. Kato, K. Hosotani, F. Arai, M. Fujiwara, Y. Uchiyama, K. Ohuchi","doi":"10.23919/SISPAD49475.2020.9241626","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241626","url":null,"abstract":"A TCAD model to simulate program/erase characteristics of 3D charge trap flash memory cells is constructed and calibrated with the experiment. The mechanism of the program characteristics degradation of the semicircular cells are studied using the TCAD model and it is clarified that the current leakage path due to the fringe parasitic transistor causes the degradation. An initial charge injection technique is proposed to suppress the parasitic leakage current to improve the program characteristics of the semicircular cells.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128681278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD 利用改进的TCAD雪崩模型研究igbt中电流灯丝运动与局部发热的关系
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241680
T. Suwa
{"title":"Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD","authors":"T. Suwa","doi":"10.23919/SISPAD49475.2020.9241680","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241680","url":null,"abstract":"For development of high voltage power devices, it is very important to understand local heat generation phenomena of current filaments especially for reliability designs. Current filaments mean high density currents flow only in some parts of active cells and induce large heat generation locally. They appear when excessive current flows for some reasons during device switching. The aim of this paper is to clarify the following by using a modified avalanche model: The local lattice temperature dependence of impact ionization coefficients is a main factor in current filament movements, and the movements significantly suppress local heat generation. In particular, this tendency becomes even stronger when the ambient temperature is low and after the depletion layer reaches the buffer layer on the back surface side of IGBTs.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115536103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Tight-binding simulation of optical gain in h-BCN for laser application 激光用h-BCN光增益的紧密结合模拟
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241689
D. Maki, M. Ogawa, S. Souma
{"title":"Tight-binding simulation of optical gain in h-BCN for laser application","authors":"D. Maki, M. Ogawa, S. Souma","doi":"10.23919/SISPAD49475.2020.9241689","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241689","url":null,"abstract":"We present a numerical study on the optical gain in semiconductor laser structure with h-BCN as an active layer. By using the tight-binding method along with the drift-diffusion-Poisson equations, we analyze the optical gain spectra for various band gap energies in h-BCN, demonstrating that the largest gain peak of h-BCN is in the mid-infrared region and can be significantly greater than that in the case of conventional semiconductor active layer.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115736984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 基于单位胞受限Bloch函数和NEGF形式的从头算量子输运
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241641
M. Pala, D. Esseni
{"title":"Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism","authors":"M. Pala, D. Esseni","doi":"10.23919/SISPAD49475.2020.9241641","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241641","url":null,"abstract":"This invited contribution illustrates the theory and application of a first-principle transport methodology employing a basis set obtained directly from the Bloch functions computed with a plane wave (PW) ab-initio solver. We start from a PW density functional theory (DFT) Hamiltonian, use a unitary transformation to real space in the transport direction, and then discuss a basis of Bloch functions enabling a huge reduction of the size of the Hamiltonian blocks and an effective suppression of possible unphysical states. Our methodology enables ab-initio transport simulations with a good computational efficiency, and we here present results for self-consistent simulations of a singlegate monolayer PtSe2 field effect transistor.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126217559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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