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First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule 氧化钼分子掺杂氢端金刚石的电子和光学性质的第一性原理模拟
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241630
J. McGhee, V. Georgiev
{"title":"First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule","authors":"J. McGhee, V. Georgiev","doi":"10.23919/SISPAD49475.2020.9241630","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241630","url":null,"abstract":"In this work we investigate the surface transfer doping process induced between a hydrogen-terminated (100) diamond and a metal oxide MoO3, using the Density Functional Theory (DFT) method. DFT allows us to calculate the electronic and optical properties of the hydrogen-terminated diamond (H-diamond) and establish a link between the underlying electronic structure and the charge transfer between the oxide materials and the H-diamond. Our results show that the metal oxide molecule can be described as an electron acceptor and extracts the electrons from the diamond creating 2D hole gas in the diamond surface. Hence, this metal oxide molecule acts as a p-type doping material for the diamond.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131208662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory 8-1三维半圆电荷阱闪存程序特性退化机理及对策的TCAD研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241626
N. Kariya, M. Tsuda, T. Kurusu, M. Kondo, K. Nishitani, H. Tokuhira, J. Shimokawa, Y. Yokota, H. Tanimoto, S. Onoue, Y. Shimada, T. Kato, K. Hosotani, F. Arai, M. Fujiwara, Y. Uchiyama, K. Ohuchi
{"title":"8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory","authors":"N. Kariya, M. Tsuda, T. Kurusu, M. Kondo, K. Nishitani, H. Tokuhira, J. Shimokawa, Y. Yokota, H. Tanimoto, S. Onoue, Y. Shimada, T. Kato, K. Hosotani, F. Arai, M. Fujiwara, Y. Uchiyama, K. Ohuchi","doi":"10.23919/SISPAD49475.2020.9241626","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241626","url":null,"abstract":"A TCAD model to simulate program/erase characteristics of 3D charge trap flash memory cells is constructed and calibrated with the experiment. The mechanism of the program characteristics degradation of the semicircular cells are studied using the TCAD model and it is clarified that the current leakage path due to the fringe parasitic transistor causes the degradation. An initial charge injection technique is proposed to suppress the parasitic leakage current to improve the program characteristics of the semicircular cells.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128681278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD 利用改进的TCAD雪崩模型研究igbt中电流灯丝运动与局部发热的关系
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241680
T. Suwa
{"title":"Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD","authors":"T. Suwa","doi":"10.23919/SISPAD49475.2020.9241680","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241680","url":null,"abstract":"For development of high voltage power devices, it is very important to understand local heat generation phenomena of current filaments especially for reliability designs. Current filaments mean high density currents flow only in some parts of active cells and induce large heat generation locally. They appear when excessive current flows for some reasons during device switching. The aim of this paper is to clarify the following by using a modified avalanche model: The local lattice temperature dependence of impact ionization coefficients is a main factor in current filament movements, and the movements significantly suppress local heat generation. In particular, this tendency becomes even stronger when the ambient temperature is low and after the depletion layer reaches the buffer layer on the back surface side of IGBTs.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115536103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Tight-binding simulation of optical gain in h-BCN for laser application 激光用h-BCN光增益的紧密结合模拟
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241689
D. Maki, M. Ogawa, S. Souma
{"title":"Tight-binding simulation of optical gain in h-BCN for laser application","authors":"D. Maki, M. Ogawa, S. Souma","doi":"10.23919/SISPAD49475.2020.9241689","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241689","url":null,"abstract":"We present a numerical study on the optical gain in semiconductor laser structure with h-BCN as an active layer. By using the tight-binding method along with the drift-diffusion-Poisson equations, we analyze the optical gain spectra for various band gap energies in h-BCN, demonstrating that the largest gain peak of h-BCN is in the mid-infrared region and can be significantly greater than that in the case of conventional semiconductor active layer.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115736984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 基于单位胞受限Bloch函数和NEGF形式的从头算量子输运
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241641
M. Pala, D. Esseni
{"title":"Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism","authors":"M. Pala, D. Esseni","doi":"10.23919/SISPAD49475.2020.9241641","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241641","url":null,"abstract":"This invited contribution illustrates the theory and application of a first-principle transport methodology employing a basis set obtained directly from the Bloch functions computed with a plane wave (PW) ab-initio solver. We start from a PW density functional theory (DFT) Hamiltonian, use a unitary transformation to real space in the transport direction, and then discuss a basis of Bloch functions enabling a huge reduction of the size of the Hamiltonian blocks and an effective suppression of possible unphysical states. Our methodology enables ab-initio transport simulations with a good computational efficiency, and we here present results for self-consistent simulations of a singlegate monolayer PtSe2 field effect transistor.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126217559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Universal Feature of Trap-Density Increase in Aged MOSFET and Its Compact Modeling 老化MOSFET陷阱密度增加的普遍特征及其紧凑建模
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241674
F. A. Herrera, M. Miura-Mattausch, T. Iizuka, H. Kikuchihara, H. Mattausch, H. Takatsuka
{"title":"Universal Feature of Trap-Density Increase in Aged MOSFET and Its Compact Modeling","authors":"F. A. Herrera, M. Miura-Mattausch, T. Iizuka, H. Kikuchihara, H. Mattausch, H. Takatsuka","doi":"10.23919/SISPAD49475.2020.9241674","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241674","url":null,"abstract":"Our investigation focuses on accurate circuit aging prediction for bulk MOSFETs. A self-consistent aging modeling is proposed, which considers the trap-density N trap increase as the aging origin. This N trap s considered in the Poisson equation together with other charges induced within MOSFET. It is demonstrated that a universal relationship of the N trap increase as a function of integrated substrate current, caused by device stress, can describe the MOSFET aging in a simple way for any device-operating conditions. An exponential increase with constant and unitary slope of the N trap is found to successfully predict the aging phenomena, reaching a saturation for high stress degradation. The model universality is verified additionally for any device size. Comparison with existing conventional aging modeling for circuit simulation is discussed for demonstrating the simplifications due to the developed modeling approach.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123659548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices 建模辅助原子精密先进制造设备的室温操作
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241642
Xujiao Gao, L. Tracy, E. Anderson, Deanna Campbell, J. Ivie, T. Lu, D. Mamaluy, S. Schmucker, S. Misra
{"title":"Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices","authors":"Xujiao Gao, L. Tracy, E. Anderson, Deanna Campbell, J. Ivie, T. Lu, D. Mamaluy, S. Schmucker, S. Misra","doi":"10.23919/SISPAD49475.2020.9241642","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241642","url":null,"abstract":"One big challenge of the emerging atomic precision advanced manufacturing (APAM) technology for microelectronics application is to realize APAM devices that operate at room temperature (RT). We demonstrate that semiclassical technology computer aided design (TCAD) device simulation tool can be employed to understand current leakage and improve APAM device design for RT operation. To establish the applicability of semiclassical simulation, we first show that a semiclassical impurity scattering model with the Fermi-Dirac statistics can explain the very low mobility in APAM devices quite well; we also show semiclassical TCAD reproduces measured sheet resistances when proper mobility values are used. We then apply semiclassical TCAD to simulate current leakage in realistic APAM wires. With insights from modeling, we were able to improve device design, fabricate Hall bars, and demonstrate RT operation for the very first time.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115020605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Dynamic Simulation of Write ‘1’ Operation in the Bi-stable 1-Transistor SRAM Cell 双稳单晶体管SRAM单元中写“1”操作的动态仿真
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241653
T. Dutta, F. Adamu-Lema, A. Asenov, Y. Widjaja, Valerii Nebesnyi
{"title":"Dynamic Simulation of Write ‘1’ Operation in the Bi-stable 1-Transistor SRAM Cell","authors":"T. Dutta, F. Adamu-Lema, A. Asenov, Y. Widjaja, Valerii Nebesnyi","doi":"10.23919/SISPAD49475.2020.9241653","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241653","url":null,"abstract":"For the first time, physical insights into the writing process in the bi-stable 1-transistor SRAM cells are provided using dynamic (time dependent) TCAD simulations. The simulations are based on 28 nm planar CMOS technology, and the setup is carefully calibrated against available experimental data. Based on the simulations, we were able to identify clearly the mechanisms involved in the write ‘1’ operation. The dependence of the writing process on drain and gate bias conditions was also investigated.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131209184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era 实时TCAD:人工智能时代TCAD的新范式
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241622
Sanghoon Myung, Jinwoo Kim, Yongwoo Jeon, Wonik Jang, I. Huh, Jaemin Kim, Songyi Han, K. Baek, Jisu Ryu, Yoon-suk Kim, Jiseong Doh, Jae-ho Kim, C. Jeong, Daesin Kim
{"title":"Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era","authors":"Sanghoon Myung, Jinwoo Kim, Yongwoo Jeon, Wonik Jang, I. Huh, Jaemin Kim, Songyi Han, K. Baek, Jisu Ryu, Yoon-suk Kim, Jiseong Doh, Jae-ho Kim, C. Jeong, Daesin Kim","doi":"10.23919/SISPAD49475.2020.9241622","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241622","url":null,"abstract":"This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively. Our framework enables to update automatically deep learning models by estimating the uncertainty of the model prediction. Our Real-Time TCAD framework is validated on 130nm processes for display driver integration circuit (DDI), and 1) prediction time was 530,000 times faster than conventional TCAD, and time spent for process optimization was reduced by 300,000 times compared to human expert, 2) the model achieved average accuracy of 99% compared to TCAD simulation results, and thus, 3) process development time for DDI was reduced by 8 weeks.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124438945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
SISPAD 2020 Commentary SISPAD 2020评论
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/sispad49475.2020.9241617
{"title":"SISPAD 2020 Commentary","authors":"","doi":"10.23919/sispad49475.2020.9241617","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241617","url":null,"abstract":"","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129912520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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