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Theoretical study of electronic transport in monolayer SnSe 单层SnSe中电子输运的理论研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241611
Sanjay Gopalan, G. Gaddemane, M. L. Van de Put, M. Fischetti
{"title":"Theoretical study of electronic transport in monolayer SnSe","authors":"Sanjay Gopalan, G. Gaddemane, M. L. Van de Put, M. Fischetti","doi":"10.23919/SISPAD49475.2020.9241611","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241611","url":null,"abstract":"Monolayer SnSe is a two-dimensional (2D) material with an indirect band gap ($sim$ 0.92 eV) that can be obtained relatively easily by exfoliating bulk SnSe crystals. Like most 2D van der Waals monolayers, its layered nature reduces or eliminates the defects found in bulk materials, such as surface interface roughness and dangling bonds. Here, we show promising results of first-principle calculations of the low-field mobility and high-field characteristics of monolayer SnSe by implementing the fullband Monte Carlo approach.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121276982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
5 Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance 5 .硅衬底等离子体工艺缺陷的空间和能量分布对MOS器件性能影响的模型分析
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241621
T. Hamano, K. Urabe, K. Eriguchi
{"title":"5 Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance","authors":"T. Hamano, K. Urabe, K. Eriguchi","doi":"10.23919/SISPAD49475.2020.9241621","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241621","url":null,"abstract":"This paper comprehensively discusses impacts of defect profiles in a Si substrate induced by plasma processing on MOS device performance. Both spatial and energy profiles of the defects considering practical plasma parameters were implemented into a conventional device simulation. Unique capacitance-voltage characteristics of MOS capacitors were obtained depending on the energy profiles, which shows good agreement with experimental results. The relationship between the defect profile and device parameter variation was clarified for n- and p-channel MOSFETs. The prediction results suggest the significance of precise control of spatial and energy profiles of defects for future MOS device design and fabrication.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123707661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling and Simulation of Si IGBTs Si igbt的建模与仿真
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241627
N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai
{"title":"Modeling and Simulation of Si IGBTs","authors":"N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai","doi":"10.23919/SISPAD49475.2020.9241627","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241627","url":null,"abstract":"Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"437 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122884475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Numerical Solution of the Constrained Wigner Equation 约束Wigner方程的数值解
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241624
R. Kosik, J. Cervenka, H. Kosina
{"title":"Numerical Solution of the Constrained Wigner Equation","authors":"R. Kosik, J. Cervenka, H. Kosina","doi":"10.23919/SISPAD49475.2020.9241624","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241624","url":null,"abstract":"Quantum electron transport in modern semiconductor devices can be described by a Wigner equation which is formally similar to the classical Liouville equation. The stationary Wigner equation has a singularity at zero momentum (k=0). In order to get a non-singular solution it is necessary to impose a constraint for the solution at k=0 which gives the constrained Wigner equation. We introduce a Petrov-Galerkin method for the solution of the corresponding constrained sigma equation. The constraint in the Wigner equation is interpreted as an extra test function and is naturally incorporated in the method.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"49 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114138244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below 纳米级场效应管:如何在5nm及以下节点上实现通用、预测和快速的原子模拟
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241651
P. Blaise, Udita Kapoor, Mark A. Townsend, E. Guichard, J. Charles, D. Lemus, T. Kubis
{"title":"Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below","authors":"P. Blaise, Udita Kapoor, Mark A. Townsend, E. Guichard, J. Charles, D. Lemus, T. Kubis","doi":"10.23919/SISPAD49475.2020.9241651","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241651","url":null,"abstract":"Ultra-scaled FET technology requires simulations at the atomic scale. We present the Victory Atomistic tool inherited from Nemo5. Thanks to a combination of non-equilibrium Green’s functions and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible within the self-consistent Born approximation, optimized by a generalized low-rank projection.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114515609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gummel-cycle Algebraic Multigrid Preconditioning for Large-scale Device Simulations 大规模器件模拟的gummel循环代数多网格预处理
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241643
Hiroo Koshimoto, H. Ishimabushi, Jaehyun Yoo, Yasuyuki Kayama, Satoru Yamada, U. Kwon, D. Kim
{"title":"Gummel-cycle Algebraic Multigrid Preconditioning for Large-scale Device Simulations","authors":"Hiroo Koshimoto, H. Ishimabushi, Jaehyun Yoo, Yasuyuki Kayama, Satoru Yamada, U. Kwon, D. Kim","doi":"10.23919/SISPAD49475.2020.9241643","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241643","url":null,"abstract":"It has been proven that the multigrid method is promissing on large-scale scientific simulations. However there still remains some difficulties on applying the multigrid method, which is the system of systems such as FEM on stress analysis or coupled PDEs. Above all, the drift-diffusion model widely used in the device modeling is a typical case belonging to the problems. Because the model has a tight coupling between the electrostatic field and the carrier movements and this property prevents the multigrid method from working effectively. In this paper, we propose a technique to apply the multigrid method to the drift-diffusion model. The technique consists of reflection process between systems coupled in the equation. Consequently the technique helps to solve large-scale device simulations. We show the case of power devices.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129868590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Machine Learning Prediction of Defect Formation Energies in a-SiO2 a-SiO2中缺陷形成能的机器学习预测
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241609
D. Milardovich, M. Jech, Dominic Waldhoer, M. Waltl, T. Grasser
{"title":"Machine Learning Prediction of Defect Formation Energies in a-SiO2","authors":"D. Milardovich, M. Jech, Dominic Waldhoer, M. Waltl, T. Grasser","doi":"10.23919/SISPAD49475.2020.9241609","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241609","url":null,"abstract":"Due to its stochastic nature, the calculation of defect formation energies in amorphous structures is a CPU-intensive task. We demonstrate the use of machine learning to predict defect formation energies to significantly minimize the number of required calculations. Different combinations of descriptors and machine learning algorithms are used to predict the formation energies of hydroxyl E’ center defects in amorphous silicon dioxide structures. The performance of each combination is analyzed and compared to results obtained from direct ab initio calculations.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130610195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical study of surface chemical reactions in 2D-FET based pH sensors 基于二维场效应晶体管的pH传感器表面化学反应的数值研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241667
A. Toral-Lopez, E. G. Marín, J. Cuesta, F. Ruiz, F. Pasadas, A. Medina-Rull, A. Godoy
{"title":"Numerical study of surface chemical reactions in 2D-FET based pH sensors","authors":"A. Toral-Lopez, E. G. Marín, J. Cuesta, F. Ruiz, F. Pasadas, A. Medina-Rull, A. Godoy","doi":"10.23919/SISPAD49475.2020.9241667","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241667","url":null,"abstract":"This work numerically evaluates the impact of surface chemical reactions on the performance of 2D-FET based pH sensors. More precisely, we focus on the adsorption of chlorine ions and the expulsion of protons at the sensing interface of FET sensors. This analysis is performed through numerical simulations encompassing the modelling of both the semiconductor device and the liquid solution to be analysed. In the semiconductor region the 2D Poisson - 1D Continuity equations are self-consistently solved, while in the electrolyte region we deal with the modified Poisson - Boltzmann system [1]. The simulator also includes the interactions taking place at the electrolyte-sensing layer interface through: i) the non-constant profile of water permittivity, and ii) the steric effects in the surface ions concentration by means of the Potentials of Mean Force (PMFs) [2], [3]. This comprehensive description of the electrolyte-device interface provides a suitable framework to unveil the relevance of multiple chemical reactions, such as the adsorption of chlorine ions, on the behaviour of 2D-FET based pH sensors.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123520477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and Beyond 针对3nm及以上节点的基于鳍片和基于薄片的互补FET器件和电路级评估
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241655
Liu Jiang, A. Pal, E. Bazizi, Mehdi Saremi, He Ren, B. Alexander, Buvna Ayyagari-Sangamalli
{"title":"Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and Beyond","authors":"Liu Jiang, A. Pal, E. Bazizi, Mehdi Saremi, He Ren, B. Alexander, Buvna Ayyagari-Sangamalli","doi":"10.23919/SISPAD49475.2020.9241655","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241655","url":null,"abstract":"Complementary FET (CFET), implemented by stacking NMOS and PMOS on top of each other, is considered as an emerging option to continue logic scaling beyond 3nm node. It can be configured with a fin-on-fin (fin-based CFET) or sheet-on-sheet (sheet-based CFET) structures. In this paper, we use 3D-TCAD simulation to compare those two configurations at both device and circuit levels. For accurate comparison between these two CFET configurations, we deploy a drift-diffusion simulation framework, calibrated to semi-classical sub-band BTE (Boltzmann Transport Equation). We show that for the same effective channel width, nMOS of sheet-based CFET has 10% higher drive-current compared to fin-based CFET. For pMOS, sheet-based CFET shows 5% lower drive-current compared to fin-based CFET. When compared for the same device footprint with increased nanosheet width, nMOS and pMOS sheet-based CFET shows 73% and 47% higher drive current respectively compared to fin-based CFET. Using 31-stage ring-oscillator as a representative circuit, we show that for the same electrical channel width, the circuit performance of the sheet-based CFET is 2.6% higher than the fin-based CFET at Vdd of 0.7V. When compared for the same device footprint, sheet-based CFET shows 9% higher circuit performance compared to the fin-based CFET.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"106 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120915858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance 磷烯纳米带mosfet的量子输运模拟:金属接触、弹道性和串联电阻的影响
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241601
M. Poljak, M. Matić
{"title":"Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance","authors":"M. Poljak, M. Matić","doi":"10.23919/SISPAD49475.2020.9241601","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241601","url":null,"abstract":"Performance of phosphorene nanoribbon (PNR) MOSFETs at “3 nm” logic technology node is studied using atomistic quantum transport simulations, with an emphasis on the impact of metal contacts, series resistance and transport ballisticity. We find that realistic metal contacts decrease drain current by up to 70%, which corresponds to more than $1400 Omega mu mathrm{m}$ in contact resistance (RSD). On the other hand, setting RSD to $270 Omega mumathrm{m}$, as foreseen by the International Roadmap for Devices and Systems (IRDS), PNR MOSFETs would need to operate at 50% to 70% of their ballistic limit, depending on PNR width, in order to meet IRDS targets.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116191006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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