2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - 最新文献

Theoretical study of electronic transport in monolayer SnSe

Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241611 Sanjay Gopalan, G. Gaddemane, M. L. Van de Put, M. Fischetti

5 Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance

Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241621 T. Hamano, K. Urabe, K. Eriguchi

Modeling and Simulation of Si IGBTs

Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241627 N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

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