纳米级场效应管:如何在5nm及以下节点上实现通用、预测和快速的原子模拟

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241651

P. Blaise, Udita Kapoor, Mark A. Townsend, E. Guichard, J. Charles, D. Lemus, T. Kubis

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引用次数: 1

摘要

超尺度场效应管技术需要在原子尺度上进行模拟。我们介绍了从Nemo5继承的胜利原子工具。由于结合了非平衡格林函数和最先进的带结构计算，在自洽玻恩近似中可以实现通用的、预测性的和快速的模拟，并通过广义低秩投影进行优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below

Ultra-scaled FET technology requires simulations at the atomic scale. We present the Victory Atomistic tool inherited from Nemo5. Thanks to a combination of non-equilibrium Green’s functions and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible within the self-consistent Born approximation, optimized by a generalized low-rank projection.

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来源期刊

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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