Tight-binding simulation of optical gain in h-BCN for laser application

We present a numerical study on the optical gain in semiconductor laser structure with h-BCN as an active layer. By using the tight-binding method along with the drift-diffusion-Poisson equations, we analyze the optical gain spectra for various band gap energies in h-BCN, demonstrating that the largest gain peak of h-BCN is in the mid-infrared region and can be significantly greater than that in the case of conventional semiconductor active layer.