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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

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Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power Devices 新型全频带蒙特卡罗器件模拟器，用于模拟4H-SiC功率器件的近程库仑相互作用
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/sispad49475.2020.9241605
Chi-Yin Cheng, D. Vasileska
{"title":"Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power Devices","authors":"Chi-Yin Cheng, D. Vasileska","doi":"10.23919/sispad49475.2020.9241605","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241605","url":null,"abstract":"In this work, we present a novel full-band Monte Carlo device simulator for modelling 4H-SiC Power electronic devices in which, for the first time, we use real-space molecular dynamics approach for the Coulomb interactions. Proper treatment of the electron-electron interactions is critical for modelling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain the steady-state behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122119170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy Band Calculation of Si/Si0.7 Ge0.3 Nanopillars in k➙ Space k /往后空间中Si/Si0.7 Ge0.3纳米柱的能带计算
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241596
Min-Hui Chuang, Yiming Li
{"title":"Energy Band Calculation of Si/Si0.7 Ge0.3 Nanopillars in k➙ Space","authors":"Min-Hui Chuang, Yiming Li","doi":"10.23919/SISPAD49475.2020.9241596","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241596","url":null,"abstract":"In this work, we explore the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in $mathrm{S}mathrm{i}_{0.7}mathrm{G}mathrm{e}_{0.3}$ matrix fabricated by neutral beam etching. Instead of real-space modeling, we formulate and solve the Schrödinger equation with an effective mass approach using 3D finite-element simulation in $vec{k}$ space. This approach enables us to calculate the electronic structure in a computationally effective manner. The effects of the height, radius, separation, and shape of Si NPs on the energy band and density of states are calculated and discussed. The effect of the radius on the electron energy band control is significant while that of the shape is marginal owing to high geometry aspect ratio. In contrast with the results of electrons, both the radius and separation play crucial role in tuning the energy band of holes; consequently, they govern the variation of energy band gap of $mathrm{S}mathrm{i}/mathrm{S}mathrm{i}_{0.7}mathrm{G}mathrm{e}_{0.3}$ NPs.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1061 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123157949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing 铁电晶体管三维垂直NAND结构随机相位分布对内存计算的影响
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241618
Gihun Choe, Wonbo Shim, Jae Hur, A. Khan, Shimeng Yu
{"title":"Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing","authors":"Gihun Choe, Wonbo Shim, Jae Hur, A. Khan, Shimeng Yu","doi":"10.23919/SISPAD49475.2020.9241618","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241618","url":null,"abstract":"Ferroelectric field-effect transistors (FeFETs) with 3D vertical NAND architecture (3D V-NAND) are investigated for in-memory computing. In polycrystalline ferroelectric Hafnia thin film, there are different phases such as monoclinic (M), and orthorhombic (O) phases. Those are randomly distributed throughout the ferroelectric gate stack. Such positional dispersion of two phases introduces read-out current variation in 3D V-NAND of FeFETs. Herein, we employ TCAD simulations to quantify such variation and optimize bias conditions for improving the accuracy of in-memory computing.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117162221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Monte Carlo Simulation of a Three-Terminal RRAM with Applications to Neuromorphic Computing 三端RRAM的蒙特卡罗模拟及其在神经形态计算中的应用
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241659
Akhilesh Balasingam, Akash Levy, Haitong Li, Priyanka Raina
{"title":"Monte Carlo Simulation of a Three-Terminal RRAM with Applications to Neuromorphic Computing","authors":"Akhilesh Balasingam, Akash Levy, Haitong Li, Priyanka Raina","doi":"10.23919/SISPAD49475.2020.9241659","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241659","url":null,"abstract":"We developed a Monte Carlo simulator to compute the state-dependent I-V characteristics of three-terminal (3T) RRAM devices. State switching in these devices is modeled using a combination of vacancy migration and trap-assisted-tunneling mechanisms. We describe key elements of the simulator, compute hysteresis curves under typical voltage cycling conditions, and demonstrate agreement with experimental results. We then study the response of 2T- and 3T-RRAMs under pulsed operation and show that 3T-RRAM conductance values have both greater dynamic range than 2T-RRAMs and the potential to deliver superior inference accuracy in neuromorphic applications.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123590991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD 基于生成模型的自适应重要性抽样工艺TCAD通量计算
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241615
Alexander Scharinger, P. Manstetten, A. Hössinger, J. Weinbub
{"title":"Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD","authors":"Alexander Scharinger, P. Manstetten, A. Hössinger, J. Weinbub","doi":"10.23919/SISPAD49475.2020.9241615","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241615","url":null,"abstract":"A key part of advanced three-dimensional feature scale etching and deposition simulations is calculating the particle flux distributions. The most commonly applied flux calculation approach is top-down Monte Carlo which, however, introduces numerical noise. In principal, this noise can be reduced by increasing the number of simulated particles but doing so also increases the overall running time. For complex geometries, especially high aspect ratio structures, which are very prominent in state of the art three-dimensional electronic device designs, increasing the number of samples is not a viable approach: Only a very small subset of simulated particles contributes to reducing the noise in remote and obscured surface regions. We thus propose an adaptive importance sampling approach based on a generative model to more efficiently focus the sampling on those surface regions with high noise levels. We show that, for a constant number of simulated particles, our approach reduces the noise levels in the calculated flux by about 33% for a representative high aspect ratio test structure.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121460600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electromigration Model for Platinum Hotplates 铂热板的电迁移模型
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241645
L. Filipovic
{"title":"Electromigration Model for Platinum Hotplates","authors":"L. Filipovic","doi":"10.23919/SISPAD49475.2020.9241645","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241645","url":null,"abstract":"Microheaters are frequently applied in the design of semiconductor metal oxide gas sensors in order to heat the sensing layer and induce the surface chemical reactions which promote molecular adsorption. One of the most common materials used for the microheater layer is platinum. In this manuscript, a model for electro-migration is developed and implemented to study vacancy dynamics and the thereby-induced stress in platinum-based microheaters for gas sensor applications. The model is then applied to study the impact of the individual components which contribute to vacancy transport, including electro-migration, thermo-migration, and stress-migration. We find that these structures have very high thermal gradients, making the impact of thermo-migration component higher than the electro-migration component in the early stages of vacancy transport, unlike in copper-based interconnects. Therefore, improving the temperature uniformity of the microheater design should lead to a longer operating time before failure.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117030182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
4-4 Effect of Unit-cell Arrangement on Performance of Multi-stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires 4-4硅纳米线单胞排列对多级平面无腔unieg热电发生器性能的影响
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241598
Katsuki Abe, K. Oda, M. Tomita, T. Matsuki, T. Matsukawa, Takanobu Watanabe
{"title":"4-4 Effect of Unit-cell Arrangement on Performance of Multi-stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires","authors":"Katsuki Abe, K. Oda, M. Tomita, T. Matsuki, T. Matsukawa, Takanobu Watanabe","doi":"10.23919/SISPAD49475.2020.9241598","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241598","url":null,"abstract":"We compare the thermoelectric (TE) performances between two types of unit cell arrangements of planar unileg TE generators of silicon-nanowire (Si-NW). The planar TE generators are driven by the temperature gradient along the Si-NW. The TE performance highly depends on how the hot and cold sides of the unit cell is oriented with respect to the neighboring cells. If the hot sides of neighboring cells are placed next to each other, TE power is improved compared to the case where the hot and cold side of TE generator is arranged alternately. Optimal conditions of Si-NW length and metal wiring structure are also discussed.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124205298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SISPAD 2020 Index SISPAD 2020 指数
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/sispad49475.2020.9241663
{"title":"SISPAD 2020 Index","authors":"","doi":"10.23919/sispad49475.2020.9241663","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241663","url":null,"abstract":"","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134508367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automatic Modeling of Logic Device Performance Based on Machine Learning and Explainable AI 基于机器学习和可解释人工智能的逻辑器件性能自动建模
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241681
Seungju Kim, Kwangseok Lee, H. Noh, Youngkyu Shin, Kyu-Baik Chang, Jae-Yun Jeong, Sangwon Baek, M. Kang, Keunhwi Cho, Dong-Won Kim, Daesin Kim
{"title":"Automatic Modeling of Logic Device Performance Based on Machine Learning and Explainable AI","authors":"Seungju Kim, Kwangseok Lee, H. Noh, Youngkyu Shin, Kyu-Baik Chang, Jae-Yun Jeong, Sangwon Baek, M. Kang, Keunhwi Cho, Dong-Won Kim, Daesin Kim","doi":"10.23919/SISPAD49475.2020.9241681","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241681","url":null,"abstract":"In this paper, we propose a machine learning framework for predicting performances of semiconductor devices that can automatically reflect modifications in process conditions. While standard TCAD simulators require intensive modeling and calibration works to capture new process conditions, our proposed framework can learn these conditions from data efficiently and directly. Furthermore, by applying recently attention-getting explainable AI techniques, important factors that affecting device performances can be discovered automatically from the proposed model. Specifically, our model quantifies significance of each process step as the game-theoretic Shapley value, that cannot be achieved by TCAD simulators.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"308 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132779067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Simulation and Evaluation of Plasmonic Circuits 等离子体电路的仿真与评价
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241602
M. Fukuda, Y. Ishikawa
{"title":"Simulation and Evaluation of Plasmonic Circuits","authors":"M. Fukuda, Y. Ishikawa","doi":"10.23919/SISPAD49475.2020.9241602","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241602","url":null,"abstract":"This paper presents and discusses the modeling and evaluation of plasmonic circuits including plasmonic devices such as a multimode interferometer, mode converter, multiplexer, logic circuits, and signal transmission networks.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129040762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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