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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

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Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS) 纳米电子仿真软件(NESS)的增强功能
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241594
C. Medina-Bailón, O. Badami, H. Carrillo-Nuñez, T. Dutta, D. Nagy, F. Adamu-Lema, V. Georgiev, A. Asenov
{"title":"Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)","authors":"C. Medina-Bailón, O. Badami, H. Carrillo-Nuñez, T. Dutta, D. Nagy, F. Adamu-Lema, V. Georgiev, A. Asenov","doi":"10.23919/SISPAD49475.2020.9241594","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241594","url":null,"abstract":"The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of complexity) in a unified simulation domain. NESS considers confinement-aware band structures, generates the main sources of variability, and can study their impact using different transport models. In particular, this work focuses on the new modules implemented: Kubo-Greenwood solver, Kinetic Monte Carlo solver, Gate Leakage calculation, and a full-band quantum transport solver in the presence of hole-phonon interactions using a mode-space $k cdot p$ approach in combination with the existing NEGF module.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116014164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Multiband Phase Space Operator for Narrow Bandgap Semiconductor Devices 窄带隙半导体器件的多频带相空间算子
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241595
L. Schulz, D. Schulz
{"title":"Multiband Phase Space Operator for Narrow Bandgap Semiconductor Devices","authors":"L. Schulz, D. Schulz","doi":"10.23919/SISPAD49475.2020.9241595","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241595","url":null,"abstract":"The analysis of the charge carrier transport within modern device concepts of nanoelectronics and nanophotonics as well as THz technology requires the inclusion of multiband Hamiltonians. These can then be used to consider not only intraband transitions but also interband transitions as well as effects based on the existence and interaction of light and heavy holes. For this purpose appropriate multiband Hamiltonians must be applied for a suitable numerical analysis. On the basis of the quantum Liouville equation, a formalism is derived how multiband Hamiltonians can be integrated into advanced and recently developed Wigner transport based algorithms utilizing a phase space operator and which multiband models are appropriate. The presented formalism is demonstrated by its application onto resonant tunnel diodes that take advantage of interband effects within narrow band gap semiconductor devices.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127705291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices 基于多金属氧酸盐的分子记忆器件的第一性原理与动力学蒙特卡罗相结合研究
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241606
P. Lapham, O. Badami, C. Medina-Bailón, F. Adamu-Lema, T. Dutta, D. Nagy, V. Georgiev, A. Asenov
{"title":"A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices","authors":"P. Lapham, O. Badami, C. Medina-Bailón, F. Adamu-Lema, T. Dutta, D. Nagy, V. Georgiev, A. Asenov","doi":"10.23919/SISPAD49475.2020.9241606","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241606","url":null,"abstract":"In this paper, we combine Density Functional Theory with Kinetic Monte Carlo methodology to study the fundamental transport properties of a type of polyoxometalate (POM) and its behaviour in a potential flash memory device. DFT simulations on POM molecular junctions helps us demonstrate the link between underlying electronic structure of the molecule and its transport properties. Furthermore, we show how various electrode-molecule contact configurations determine the electron transport through the POM. Also, our work reveals that the orientation of the molecule to the electrodes plays a key role in the transport properties of the junction. With Kinetic Monte Carlo we extend this investigation by simulating the retention time of a POM-based flash memory device. Our results show that a POM based flash memory could potentially show multi-bit storage and retain charge for up to 10 years.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128980323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation 过渡金属二硫化物通道隧道场效应管的TCAD模拟与基于abinitio的NEGF计算一致
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241637
H. Asai, T. Kuroda, K. Fukuda, J. Hattori, T. Ikegami, N. Mori
{"title":"TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation","authors":"H. Asai, T. Kuroda, K. Fukuda, J. Hattori, T. Ikegami, N. Mori","doi":"10.23919/SISPAD49475.2020.9241637","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241637","url":null,"abstract":"We perform TCAD simulation for TMDC channel TFETs with the material parameters considering ab initio band structure. By using the WKB-based nonlocal band-to-band tunneling (BTBT) model with the above parameters, we find that the current voltage characteristics of the TFETs are in good agreement with those obtained by microscopic NEGF calculation. Based on this approach, we also investigate the dependence of tunnel leakage current on the gate length. Our simulation method paves the way for reliable macroscopic device simulations for TMDC channel TFET.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129700937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations 校准硅迁移率和不完全电离模型与场依赖电离能的低温模拟
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241599
H. Wong
{"title":"Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations","authors":"H. Wong","doi":"10.23919/SISPAD49475.2020.9241599","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241599","url":null,"abstract":"Cryogenic silicon CMOS operating between 77K and 4.2K is becoming more popular in high-speed server applications and the periphery of quantum computers. In the cryogenic regime, dopant incomplete ionization and field enhanced ionization become dominating physical phenomena. Therefore, it is important to use accurate and well-calibrated mobility and incomplete ionization models in cryogenic TCAD simulations. In this paper, we present a Philips Unified Mobility Model (PhuMob) and Altermatt’s incomplete ionization model calibrated between 300K and 20K for boron and arsenic dopants in silicon across 5 orders of magnitude in doping concentration. A novel method is proposed to include field-dependent ionization energy in Altermatt’s model, which results in good convergence even in 3D TCAD simulations at 4K.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130843354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
SISPAD 2020 TOC
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/sispad49475.2020.9241589
{"title":"SISPAD 2020 TOC","authors":"","doi":"10.23919/sispad49475.2020.9241589","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241589","url":null,"abstract":"","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126417599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs 利用物理框架建模mosfet中的N和P BTI
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241687
R. Tiwari, N. Choudhury, Tarun Samadder, S. Mukhopadhyay, N. Parihar, S. Mahapatra
{"title":"TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs","authors":"R. Tiwari, N. Choudhury, Tarun Samadder, S. Mukhopadhyay, N. Parihar, S. Mahapatra","doi":"10.23919/SISPAD49475.2020.9241687","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241687","url":null,"abstract":"Negative and Positive Bias Temperature Instabilities (NBTI, PBTI) respectively in P and N channel High-K Metal Gate (HKMG) MOSFETs are modeled by trap generation (TG) and charge trapping (CT) and validated against measured data. The mechanism of TG (interface) is incorporated into TCAD and is separately validated using independent experiments. BTI kinetics is modeled at different stress bias (VG) and temperature (T). Impacts of Nitrogen (N%) and Equivalent Oxide Thickness (EOT) scaling on the magnitude of BTI and its time, VG and T dependencies are modeled.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129262923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models? GaAs p-i-n雪崩光电二极管的全带蒙特卡罗模拟:非局部冲击电离模型的限制是什么?
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI: 10.23919/SISPAD49475.2020.9241632
A. Pilotto, F. Driussi, D. Esseni, L. Selmi, M. Antonelli, F. Arfelli, G. Biasiol, S. Carrato, G. Cautero, D. De Angelis, R. Menk, C. Nichetti, T. Steinhartova, P. Palestri
{"title":"Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?","authors":"A. Pilotto, F. Driussi, D. Esseni, L. Selmi, M. Antonelli, F. Arfelli, G. Biasiol, S. Carrato, G. Cautero, D. De Angelis, R. Menk, C. Nichetti, T. Steinhartova, P. Palestri","doi":"10.23919/SISPAD49475.2020.9241632","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241632","url":null,"abstract":"We present a Full-Band Monte Carlo (FBMC) investigation of impact ionization in GaAs p-i-n Avalanche Photodiodes (APDs). FBMC simulations have been used to compute the gain and the excess noise factor and a new equation has been derived for the extraction of history-dependent impact ionization coefficients from FBMC simulations. Results from FBMC are then compared with the ones of nonlocal historydependent impact ionization models. We found that at high reverse bias voltages it is important to take into account the fact that secondary carriers are generated with nonzero kinetic energy. Finally, we propose an improved history-dependent model using an energy-dependent mean free path.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121889951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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