STT-MRAM单元中分离复杂几何结构的有效退磁场计算

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241662

J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov

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引用次数: 11

摘要

MRAM细胞的微磁模拟是一项计算要求很高的任务。有不同的方法来处理退磁场的计算复杂性，这是最昂贵的磁场贡献。在这项工作中，我们展示了如何在复杂的存储结构中有效地计算退磁场，以及如何进一步使用该程序来模拟磁隧道结中的自旋传递转矩开关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells

Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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