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Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)最新文献

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The influence of process parameters on the carrier generation during the hot pressing of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ solid solutions 研究了Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/固溶体热压过程中工艺参数对载流子生成的影响
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979836
H. Ha, Tae Hoon Kim, D. Hyun
{"title":"The influence of process parameters on the carrier generation during the hot pressing of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ solid solutions","authors":"H. Ha, Tae Hoon Kim, D. Hyun","doi":"10.1109/ICT.2001.979836","DOIUrl":"https://doi.org/10.1109/ICT.2001.979836","url":null,"abstract":"Hot pressed Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ alloys show different thermoelectric properties compared to alloys grown by the ordinary zone melting growth method. When specimens were hot pressed, thermoelectric properties changed according to different particle size, pressing time and hot pressing temperature. The effects of these individual parameters on the thermoelectric properties of hot pressed materials were examined. Special emphasis was put on carrier generation mechanisms related to the following parameters; oxidation, mechanical deformation during pulverization and the hot pressing temperature. It was found that all processing parameters influence the generation of electrically active defects. Defects induced by the mechanical deformation and oxygen cause generation of donors. Defect concentration is also altered with different hot pressing temperatures depending on the amount of previously received mechanical deformation. A figure of merit of 2.4/spl times/10/sup -3/ K/sup -1/ could be obtained at an optimal process condition.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121197584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of Mg/sub 2/Si/sub 1-x/Ge/sub x/ thermoelectric compound by solid phase reaction 固相反应合成Mg/sub - 2/Si/sub -x/Ge/sub -x/热电化合物
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979876
L.M. Zhang, Y.G. Leng, H.Y. Jiang, L.D. Chen, T. Hirai
{"title":"Synthesis of Mg/sub 2/Si/sub 1-x/Ge/sub x/ thermoelectric compound by solid phase reaction","authors":"L.M. Zhang, Y.G. Leng, H.Y. Jiang, L.D. Chen, T. Hirai","doi":"10.1109/ICT.2001.979876","DOIUrl":"https://doi.org/10.1109/ICT.2001.979876","url":null,"abstract":"By two-stage solid phase reaction, a series of Mg/sub 2/Si/sub 1-x/Ge/sub x/ continuous solid solutions were successfully synthesized at low temperature (823 K) for the first time. The product was single-phased without any oxide or carbide and the particle size was substantially reduced than that of the raw powders. X-ray diffraction techniques were used to explore the products' phases and DTA to the changing tendency of heat quantity during the solid phase reaction. The influence of Ge substitution to Mg/sub 2/Si/sub 1-x/Ge/sub x/ was illustrated by the changes of lattice parameter and the existence of the complete solid solubility between Mg/sub 2/Si and Mg/sub 2/Ge was established, too.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114725718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation on the performance testing technology of nanowire array thermoelectric materials 纳米线阵列热电材料性能测试技术研究
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979945
Wei Wang, Liping Si, Weiling Zhang, Jianzhong Zhang, Jian-ping Gao
{"title":"Investigation on the performance testing technology of nanowire array thermoelectric materials","authors":"Wei Wang, Liping Si, Weiling Zhang, Jianzhong Zhang, Jian-ping Gao","doi":"10.1109/ICT.2001.979945","DOIUrl":"https://doi.org/10.1109/ICT.2001.979945","url":null,"abstract":"Nanowire array thermoelectric materials possess high thermoelectric transfer efficiency, so they are very suitable for making micro-cells with microwatt power output. Since their thicknesses are only in the range of ten to several tens of micrometers, the normal testing technology cannot be used. We developed a new technology to test the thermoelectric performance. Based on this new technology, a new measuring system has been built up.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126806132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric properties of Yb-filled and Sn-compensated skutterudites 镱填充和锡补偿的方钨矿的热电性质
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979825
Jihui Yang, G. Meisner, Wei Chen, J. Dyck, C. Uher
{"title":"Thermoelectric properties of Yb-filled and Sn-compensated skutterudites","authors":"Jihui Yang, G. Meisner, Wei Chen, J. Dyck, C. Uher","doi":"10.1109/ICT.2001.979825","DOIUrl":"https://doi.org/10.1109/ICT.2001.979825","url":null,"abstract":"The effect of alloying tin on the antimony site of ytterbium-filled skutterudites is examined. We performed measurements of Hall effect, electrical resistivity, Seebeck coefficient and thermal conductivity on the series Yb/sub 0.5/Co/sub 4/Sb/sub 12-x/Sn/sub x/, with x=0.5, 0.6, 0.8 and 0.83. We find that the substitution of tin does not alter the position of the Fermi level with respect to the conduction band of these heavily doped semiconducting samples, but rather it gives rise to a p-type band. Experimental data for x=0.83 can be understood in the context of a two-carrier electrical conduction. Thermal conductivity of these ytterbium-filled skutterudites is significantly suppressed with respect to the unfilled cobalt tri-antimonide.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"42 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126118664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric materials of p and n type from the (Bi,Sb,Te) phase diagram (Bi,Sb,Te)相图中p型和n型热电材料
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979606
H. Scherrer, R. Martin-Lopez, B. Lenoir, A. Dauscher, S. Scherrer
{"title":"Thermoelectric materials of p and n type from the (Bi,Sb,Te) phase diagram","authors":"H. Scherrer, R. Martin-Lopez, B. Lenoir, A. Dauscher, S. Scherrer","doi":"10.1109/ICT.2001.979606","DOIUrl":"https://doi.org/10.1109/ICT.2001.979606","url":null,"abstract":"It seems that the lower figure of merit for sintered n type telluride compounds is due to the selenium segregation at the grain boundaries. We present the transport properties of the Bi/sub 2/Te/sub 3/ and Sb/sub 2/Te/sub 3/ binary compounds in terms of stoichiometric deviation. We discuss these properties along the pseudo-binary phase diagram to determine the domain of existence of Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ solid solutions. The study of the (Bi,Sb,Te) phase diagram allowed us to identify a zone where n-type materials can be obtained.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126247491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Characterization of filled skutterudite LaFe/sub 3/CoSb/sub 12/ thin films prepared by laser ablation 激光烧蚀法制备ffe /sub - 3/CoSb/sub - 12/填充方角铁矿薄膜的表征
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979896
A. Suzuki
{"title":"Characterization of filled skutterudite LaFe/sub 3/CoSb/sub 12/ thin films prepared by laser ablation","authors":"A. Suzuki","doi":"10.1109/ICT.2001.979896","DOIUrl":"https://doi.org/10.1109/ICT.2001.979896","url":null,"abstract":"We have prepared filled skutterudite LaFe/sub 3/CoSb/sub 12/ thin films using pulsed laser deposition. Stoichiometric, single-phase LaFe/sub 3/CoSb/sub 12/ films are obtained by selecting deposition parameters. The films are composed of small polycrystalline grains typically in the 20 to 100 nm range. Temperature dependencies of the Seebeck coefficient and other electronic transport properties at room temperature were measured for several single-phase LaFe/sub 3/CoSb/sub 12/ films synthesized at different deposition conditions. Although the Seebeck coefficient increases as the temperature increases from 100 to 400 K for all samples, its value varies depending on film synthesis conditions. The films also have high carrier concentrations (/spl sim/ 10/sup 21/ cm/sup -3/) and small mobility (< 10 cm/sup 2//Vs). These results imply that microscopic film qualities controlled by synthesis conditions affect their electronic properties.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127108664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
"LOTER" is a device to eliminate the monotony [thermoreceptor head cooling] “LOTER”是一种消除单调的装置【热感受器头部冷却】
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979935
G. Kozhemyakin
{"title":"\"LOTER\" is a device to eliminate the monotony [thermoreceptor head cooling]","authors":"G. Kozhemyakin","doi":"10.1109/ICT.2001.979935","DOIUrl":"https://doi.org/10.1109/ICT.2001.979935","url":null,"abstract":"A device for the cooling of the head of thermoreceptors has been designed. This device has two thermoelectric modules, a heat sink made of copper wire and a plastic case. The \"LOTER\" device is less than 50 g in weight.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126460069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wafer-fused thin film cooler semiconductor laser structures 晶圆熔合薄膜冷却半导体激光器结构
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979915
C. Labounty, A. Karim, X. Fan, G. Zeng, P. Abraham, Y. Okuno, J. Bowers
{"title":"Wafer-fused thin film cooler semiconductor laser structures","authors":"C. Labounty, A. Karim, X. Fan, G. Zeng, P. Abraham, Y. Okuno, J. Bowers","doi":"10.1109/ICT.2001.979915","DOIUrl":"https://doi.org/10.1109/ICT.2001.979915","url":null,"abstract":"We examine the cooling requirements and temperature stabilization needs of semiconductor lasers with emphasis on vertical cavity surface emitting laser (VCSEL) arrays. Semiconductor lasers in both in-plane and vertical cavity geometries are capable of generating large heat power densities of the order of kW/cm/sup 2/ over areas as small as 100 /spl mu/m/sup 2/. When cooling of the laser is needed, the cooler should be able to provide similar amounts of heat pumping. For these large amounts of heat pumping, a thin-film cooler structure is needed, especially if individual devices of an array must have precise temperature stabilization. Integration of the laser and thin film cooler by Au-Au wafer fusion is proposed. The fusion of the two interfaces is accomplished by mass transport in the deposited Au-films, which can be achieved under pressure at elevated temperatures. The quality of the fused interface is studied and preliminary experimental results are presented.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125128807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Interconnection of iron disilicide crystal structure parameters with its thermoelectric properties 二硅化铁晶体结构参数与其热电性能的相互关系
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979871
M. Fedorov, V. Zaitsev, I. Eremin, N. F. Kartenko, P. Konstantinov, V. Popov, M. Kurisu, G. Nakamoto, T. Souma
{"title":"Interconnection of iron disilicide crystal structure parameters with its thermoelectric properties","authors":"M. Fedorov, V. Zaitsev, I. Eremin, N. F. Kartenko, P. Konstantinov, V. Popov, M. Kurisu, G. Nakamoto, T. Souma","doi":"10.1109/ICT.2001.979871","DOIUrl":"https://doi.org/10.1109/ICT.2001.979871","url":null,"abstract":"The paper is devoted to the study of transport properties of the semiconductor phase of iron disilicide (/spl beta/-FeSi/sub 2/) at low temperature. A previous study of kinetic properties of /spl beta/-FeSi/sub 2/ showed that there is a very large difference in the thermoelectric properties of a number of samples of the same composition prepared by the same method. No essential difference was found between electrical conductivity at low temperature of single crystals and that of polycrystalline samples of iron disilicide. This paper shows that the smaller the lattice parameters of the sample, the smaller is its electrical conductivity at /spl sim/10 K. It is shown that the smallest electrical conductivity at this temperature corresponds to the unit cell of stoichiometric /spl beta/-FeSi/sub 2/, or a slightly smaller unit cell than the stoichiometric one. The study of specific heat and magnetic susceptibility of /spl beta/-FeSi/sub 2/ at low temperature indicates no phase transition or magnetic ordering at T = 20-25 K corresponding to the break in temperature dependence of electrical conductivity.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124784336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Issues of the heat dissipation coming from a big surface through a much smaller one 从一个大表面到一个小表面的散热问题
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979930
J. Vián, J. Esarte, D. Astrain, J. Aguas, M. Domiguez
{"title":"Issues of the heat dissipation coming from a big surface through a much smaller one","authors":"J. Vián, J. Esarte, D. Astrain, J. Aguas, M. Domiguez","doi":"10.1109/ICT.2001.979930","DOIUrl":"https://doi.org/10.1109/ICT.2001.979930","url":null,"abstract":"Considering thermoelectric refrigeration, it is remarkable how a small surface (Peltier pellet) should remove the heat emerging from a surface (surface of the place to be refrigerated) much larger than the one previously mentioned. Therefore, a problem of heat flux addressing rises. This work attempts to present, from a wide point of view, a possible device, based on the capillary phenomenon appearing in the porous media, capable of getting this heat flux addressing what makes easier the heat removal and improves the system efficiency. Furthermore, this element would improve the efficiency reached by the thermoelectric refrigerators including the current phase change devices.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125069064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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