研究了Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/固溶体热压过程中工艺参数对载流子生成的影响

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI:10.1109/ICT.2001.979836

H. Ha, Tae Hoon Kim, D. Hyun

{"title":"研究了Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/固溶体热压过程中工艺参数对载流子生成的影响","authors":"H. Ha, Tae Hoon Kim, D. Hyun","doi":"10.1109/ICT.2001.979836","DOIUrl":null,"url":null,"abstract":"Hot pressed Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ alloys show different thermoelectric properties compared to alloys grown by the ordinary zone melting growth method. When specimens were hot pressed, thermoelectric properties changed according to different particle size, pressing time and hot pressing temperature. The effects of these individual parameters on the thermoelectric properties of hot pressed materials were examined. Special emphasis was put on carrier generation mechanisms related to the following parameters; oxidation, mechanical deformation during pulverization and the hot pressing temperature. It was found that all processing parameters influence the generation of electrically active defects. Defects induced by the mechanical deformation and oxygen cause generation of donors. Defect concentration is also altered with different hot pressing temperatures depending on the amount of previously received mechanical deformation. A figure of merit of 2.4/spl times/10/sup -3/ K/sup -1/ could be obtained at an optimal process condition.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of process parameters on the carrier generation during the hot pressing of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ solid solutions\",\"authors\":\"H. Ha, Tae Hoon Kim, D. Hyun\",\"doi\":\"10.1109/ICT.2001.979836\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot pressed Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ alloys show different thermoelectric properties compared to alloys grown by the ordinary zone melting growth method. When specimens were hot pressed, thermoelectric properties changed according to different particle size, pressing time and hot pressing temperature. The effects of these individual parameters on the thermoelectric properties of hot pressed materials were examined. Special emphasis was put on carrier generation mechanisms related to the following parameters; oxidation, mechanical deformation during pulverization and the hot pressing temperature. It was found that all processing parameters influence the generation of electrically active defects. Defects induced by the mechanical deformation and oxygen cause generation of donors. Defect concentration is also altered with different hot pressing temperatures depending on the amount of previously received mechanical deformation. A figure of merit of 2.4/spl times/10/sup -3/ K/sup -1/ could be obtained at an optimal process condition.\",\"PeriodicalId\":203601,\"journal\":{\"name\":\"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.2001.979836\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2001.979836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

热压Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/合金的热电性能与普通区熔生长法生长的合金不同。热压试样的热电性能随试样粒度、热压时间和热压温度的不同而变化。考察了这些参数对热压材料热电性能的影响。特别强调了与下列参数有关的载流子产生机制;氧化，粉碎过程中的机械变形和热压温度。结果表明，各工艺参数对电活性缺陷的产生均有影响。由机械变形和氧气引起的缺陷导致供体的产生。缺陷浓度也随热压温度的不同而改变，这取决于先前收到的机械变形量。在最佳工艺条件下，可获得2.4/spl倍/10/sup -3/ K/sup -1/的优值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The influence of process parameters on the carrier generation during the hot pressing of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ solid solutions

Hot pressed Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ alloys show different thermoelectric properties compared to alloys grown by the ordinary zone melting growth method. When specimens were hot pressed, thermoelectric properties changed according to different particle size, pressing time and hot pressing temperature. The effects of these individual parameters on the thermoelectric properties of hot pressed materials were examined. Special emphasis was put on carrier generation mechanisms related to the following parameters; oxidation, mechanical deformation during pulverization and the hot pressing temperature. It was found that all processing parameters influence the generation of electrically active defects. Defects induced by the mechanical deformation and oxygen cause generation of donors. Defect concentration is also altered with different hot pressing temperatures depending on the amount of previously received mechanical deformation. A figure of merit of 2.4/spl times/10/sup -3/ K/sup -1/ could be obtained at an optimal process condition.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)

自引率

0.00%

发文量