{"title":"Thermoelectric development at Hi-Z technology","authors":"A. Kushch, J. Bass, S. Ghamaty, N. Eisner","doi":"10.1109/ICT.2001.979922","DOIUrl":"https://doi.org/10.1109/ICT.2001.979922","url":null,"abstract":"An improved thermoelectric generator (TEG) for the heavy duty class eight diesel trucks is under development at Hi-Z Technology. The current TEG is equipped with the improved HZ-14 thermoelectric module, which features better mechanical properties as well as higher electric power output. Also, the modules are held in place more securely. The TEG is comprised of 72 TE modules, which are capable of producing 1 kW of electrical power at 30 V DC during nominal engine operation. Currently the upgraded generator has completed testing in a test cell and starting from August 2001 will be tested on a diesel truck under typical road and environmental conditions. It is expected that the TEG will be able to supplement the existing shaft driven alternator, resulting in significant fuel saving, generating additional power required by the truck's accessories. The electronic and thermal properties of bulk materials are altered when they are incorporated into quantum wells. Two-dimensional quantum wells have been synthesized by alternating layers of B/sub 4/C and B/sub 9/C in one system and alternating layers of Si and Si/sub 0.8/Ge/sub 0.2/ in another system. Such nanostructures are being investigated as candidate thermoelectric materials with high figures of merit (Z). The predicted enhancement is attributed to the confined motion of charge carriers and phonons in the two dimensions and separating them from the ion scattering centers. Multilayer quantum well materials development continues with the fabrication of thicker films, evaluation of various substrates to minimize bypass heat loss, and bonding techniques to minimize high contact resistance quantum well thermoelectric devices with N-type Si/Si/sub 0.8/Ge/sub 0.2/ and P-type B/sub 4/C/B/sub 9/C have been fabricated from these films. The test results generated continue to indicate that much higher thermoelectric efficiencies can be achieved in the quantum wells compared to the bulk materials.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":" 41","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113952737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Grain oriented ceramics of layer-structured n-type oxide for high thermoelectric performance","authors":"S. Isobe, T. Tani, Y. Masuda, K. Koumoto","doi":"10.1109/ICT.2001.979854","DOIUrl":"https://doi.org/10.1109/ICT.2001.979854","url":null,"abstract":"Homologous compounds of (ZnO)/sub m/In/sub 2/O/sub 3/(m: integer) with layered structures show comparatively high thermoelectric properties as oxide materials, and we have reported that the in-plane (hexagonal ab plane) conductivity is 10 times as large as the cross-plane conductivity (hexagonal c-axis). To apply such crystals with structural anisotropy to thermoelectric materials, we need a thermal gradient in the direction of highest conversion efficiency. We fabricated textured (ZnO)/sub 5/In/sub 2/O/sub 3/ polycrystals by the RTGG method which includes in-situ reaction of template ZnO particles with plate-like shape and fine In/sub 2/O/sub 3/ particles, and thermoelectric properties were evaluated. Three times as high figure of merit Z(=/spl sigma/ /spl alpha//sup 2///spl kappa/) as that of the non-textured specimen was achieved by texturing. This time we report the accomplishment of higher thermoelectric properties by textured polycrystals of (ZnO)/sub 5/In/sub 0.97/Y/sub 0.03/O/sub 3/.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115370426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Kajikawa, T. Sugiyama, M. Serizawa, K. Kamio, M. Koike, T. Ohta, M. Omori
{"title":"Thermoelectric properties and electrode bonding performance for metal silicides","authors":"T. Kajikawa, T. Sugiyama, M. Serizawa, K. Kamio, M. Koike, T. Ohta, M. Omori","doi":"10.1109/ICT.2001.979877","DOIUrl":"https://doi.org/10.1109/ICT.2001.979877","url":null,"abstract":"Thermoelectric properties of metal silicides and their electrode bonding performance have been examined. Metal silicides such as chromium silicide, magnesium silicide and so on are environmentally friendly and abundant. These characters are very much important for thermoelectric power generation application. The thermoelectric properties of these materials made by the hot-press sintering method followed with spark plasma sintering method make them promising candidates for intermediate and high temperature thermoelectric applications, in particular, such as thermoelectric power generation topping co-generation system. The temperature dependence of thermoelectric performance such as the thermopower, electrical resistivity, power factor, thermal conductivity, carrier concentration, Hall mobility for Mn- and Ag- doped Chromium Silicide was characterized between room temperature and 1000 K. The shift of the peak performance of the power factor for the temperature range was observed with the dopant concentration. The electrode formation with magnesium silicide element was carried out using diffusion bonding method to Ta/Al/Mg/sub 2/Si system. The bonding characteristics were discussed from the viewpoint of the electrical performance and inspection of the diffusion behavior of the electrode and inserted metal at the junction layer.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"37 18","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120855516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhancement of phonon-drag thermopower at relatively high temperatures","authors":"Y. Ivanov, M. Vedernikov, V. Zaitsev, M. Fedorov","doi":"10.1109/ICT.2001.979913","DOIUrl":"https://doi.org/10.1109/ICT.2001.979913","url":null,"abstract":"Two mechanisms of electron-phonon drag in nondegenerate semiconductors are considered. In a superlattice, the quasimomentum conservation law is violated because of the confinement of charge carriers in quantum wells. Therefore electrons interact with thermal phonons and the phonon-drag thermopower of a superlattice can be a few orders of magnitude greater than the corresponding thermopower of a bulk semiconductor. The second mechanism under consideration is the optical-phonon drag in polar semiconductors. The obtained results are valid for any temperature. It is shown that the contribution of optical-phonon drag to the Seebeck coefficient can be large even at a temperature exceeding the Debye one.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123459768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Stadnyk, L. Romaka, Yu. K. Gorelenko, A. Tkachuk, J. Pierre
{"title":"Crystal structure and electrokinetic properties of VFeSb compound","authors":"Y. Stadnyk, L. Romaka, Yu. K. Gorelenko, A. Tkachuk, J. Pierre","doi":"10.1109/ICT.2001.979880","DOIUrl":"https://doi.org/10.1109/ICT.2001.979880","url":null,"abstract":"Crystal structure investigations of VFeSb as-cast and heat treated compounds besides the differential thermal analysis confirmed the polymorphic transformation at 1042 K in these ternary intermetallics. Structure refinements for both low- and high-temperature modifications were performed. The resistivity and thermopower were measured. The charge carrier concentration was calculated from the Hall coefficient measurements for /spl alpha/-VFeSb phase with MgAgAs type structure The figure of merit for this material is /spl sim/0.2/spl times/10/sup -3/ K/sup -1/ at room temperature. Substitutional solid solutions based on the ternary compound were prepared with Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Sr, Ta and Bi. The most efficient dopants for these p- and n-type materials namely Ti, V, Mn and Cu were found.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126712359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Hasegawa, T. Oike, H. Okumura, K. Sato, K. Nakamura, T. Yamaguchi, A. Iiyoshi, S. Yamaguchi, K. Asano, T. Eura
{"title":"Thermoelectric property measurement for a Peltier current lead","authors":"Y. Hasegawa, T. Oike, H. Okumura, K. Sato, K. Nakamura, T. Yamaguchi, A. Iiyoshi, S. Yamaguchi, K. Asano, T. Eura","doi":"10.1109/ICT.2001.979942","DOIUrl":"https://doi.org/10.1109/ICT.2001.979942","url":null,"abstract":"The Peltier current lead (PCL) has been studied since it was proposed as one of the thermoelectric applications. Due to the Peltier effect, it is expected that the PCL reduces the heat leak from the room temperature side to the low temperature side of a cryogenic system. Thermoelectric materials are installed into the copper (or aluminum) leads at the room temperature side and the copper leads are connected to the superconducting magnet. The present performance of the thermoelectric material can achieve a high current with a relatively small Peltier element. We measure the temperature dependence of the Seebeck coefficient and resistivity with BiTe thermoelectric materials. Optimum current is determined when PCLs apply to a super-conducting system with the simplest model. The heat leak reduction at the optimum current operation is estimated with several thermoelectric elements, and it is expected that the heat leak reduces by about 25%.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114595416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaobo Hu, Hong Liu, Ji-yang Wang, Huaidong Jiang, Shanrong Zhao, Dongming Zhang, M. Gu, M. Jiang
{"title":"Synthesis and growth mechanism of NaFe/sub 4/P/sub 12/ nanowires","authors":"Xiaobo Hu, Hong Liu, Ji-yang Wang, Huaidong Jiang, Shanrong Zhao, Dongming Zhang, M. Gu, M. Jiang","doi":"10.1109/ICT.2001.979907","DOIUrl":"https://doi.org/10.1109/ICT.2001.979907","url":null,"abstract":"Filled skutterudite NaFe/sub 4/P/sub 12/ single crystal nanowires were synthesized by using a hydrothermal-reduction-alloying method. X-ray diffraction (XRD), Electron diffraction (ED), Raman scattering, as well as elemental analysis were used to characterize the product. High-resolution transmission electron microscope (HRTEM) was used to investigate the microstructure of the nanowire. A growth mechanism of NaFe/sub 4/P/sub 12/ nanowire was proposed.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129779399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low-temperature transport properties of Zn/sub 4/Sb/sub 3/ bulk crystal grown by gradient freeze method","authors":"T. Souma, G. Nakamoto, M. Kurisu","doi":"10.1109/ICT.2001.979886","DOIUrl":"https://doi.org/10.1109/ICT.2001.979886","url":null,"abstract":"The low temperature thermoelectric properties have been investigated on Zn/sub 4/Sb/sub 3/ compound between 4 K and 300 K. A single phase Zn/sub 4/Sb/sub 3/ bulk crystal with the density of 95.4% of the theoretical has been grown by a gradient freeze method. The resistivity exhibits a metallic conduction with an anomaly associated with a structural transformation from /spl alpha/ to /spl beta/ phase at T/sub S//sup GF/=257.4 K. The thermopower is positive and larger in /spl alpha/ than in /spl beta/ phase. The elongation of Zn/sub 4/Sb/sub 3/ is small (1/spl times/10/sup -4/) at T/sub S//sup GF/. The magnetic measurement shows that Zn/sub 4/Sb/sub 3/ exhibits diamagnetism and /spl chi/(T) curve has an appreciable increase at T/sub S//sup GF/. The power factor of a phase is two times as large as that of /spl beta/ phase at low-temperature region (below 300 K).","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128471517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Using of thermoelectric modules for heat exchange intensification","authors":"P. Takhistov","doi":"10.1109/ICT.2001.979931","DOIUrl":"https://doi.org/10.1109/ICT.2001.979931","url":null,"abstract":"Nowadays thermoelectric modules (TEM) are widely used for the cooling of different electronic devices, i.e. computer processors. Application of thermoelectric modules allows one to obtain an additional drop of object temperature. The effectiveness of a computer processor cooling system with Peltier modules depends on various factors-heat released by the processor, type of thermoelectric module, thermal resistance of cooler, power supply parameters, etc. Regarding these factors, recommendations on choosing and applying modules for computer processor cooling are given.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124614085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L.D. Chen, X.F. Tang, T. Kawahara, J. Dyck, W. Chen, C. Uher, T. Goto, T. Hirai
{"title":"Multi-filling approach for the improvement of thermoelectric properties of skutterudites","authors":"L.D. Chen, X.F. Tang, T. Kawahara, J. Dyck, W. Chen, C. Uher, T. Goto, T. Hirai","doi":"10.1109/ICT.2001.979821","DOIUrl":"https://doi.org/10.1109/ICT.2001.979821","url":null,"abstract":"Several skutterudite antimonides filled with atoms of different kinds, (Ba, M)/sub y/Co/sub 4/Sb/sub 12/ (M=Ce, La, Sr), have been synthesized by the combination of solid state reaction and melting methods. Thermal conductivity of (Ba,Sr)/sub y/Co/sub 4/Sb/sub 12/ samples shows a behavior similar to that of Ba/sub y/Co/sub 4/Sb/sub 12/. Adding a small amount of Ce or La to the Ba/sub y/Co/sub 4/Sb/sub 12/ system is effective in further reducing the lattice thermal conductivity. The difference in the ionic radii of the two co-filler atoms is the most sensitive factor for scattering of phonons. The multi-filled (Ba, M)/sub y/Co/sub 4/Sb/sub 12/ (M=Sr, Ce, La) show lower Seebeck coefficients as compared to the single-filled Ba/sub y/Co/sub 4/Sb/sub 12/ having the same total filling fraction. It is expected that higher thermoelectric performance could be realized by further optimization of the composition of filler species.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124031474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}