Enhancement of phonon-drag thermopower at relatively high temperatures

Y. Ivanov, M. Vedernikov, V. Zaitsev, M. Fedorov
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Abstract

Two mechanisms of electron-phonon drag in nondegenerate semiconductors are considered. In a superlattice, the quasimomentum conservation law is violated because of the confinement of charge carriers in quantum wells. Therefore electrons interact with thermal phonons and the phonon-drag thermopower of a superlattice can be a few orders of magnitude greater than the corresponding thermopower of a bulk semiconductor. The second mechanism under consideration is the optical-phonon drag in polar semiconductors. The obtained results are valid for any temperature. It is shown that the contribution of optical-phonon drag to the Seebeck coefficient can be large even at a temperature exceeding the Debye one.
在较高温度下声子-拖拽热能的增强
研究了非简并半导体中电子-声子拖拽的两种机制。在超晶格中,由于量子阱中载流子的限制,违反了准动量守恒定律。因此,电子与热声子相互作用,超晶格的声子拖热功率可以比块体半导体的相应热功率大几个数量级。考虑的第二个机制是极性半导体中的光声子阻力。所得结果对任何温度都有效。结果表明,即使在超过德拜温度的情况下,光声子阻力对塞贝克系数的贡献也很大。
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