Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)最新文献_第10页

Thermoelectric properties of transition metal oxides (NiO and TiO/sub 2/) in a finely dispersgated state 过渡金属氧化物(NiO和TiO/sub 2/)在精细分散状态下的热电性能

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979859

É. Sher

引用次数: 2

Effect of Ag substitution for Co on thermoelectric properties of NaCo/sub 2/O/sub 4/ Ag取代Co对NaCo/sub 2/O/sub 4/热电性能的影响

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979870

H. Anno, S. Egawa, Y. Imai, K. Matsubara

引用次数: 0

Present state of R&D on thermoelectric technology in Japan 日本热电技术研发现状

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979820

T. Kajikawa

{"title":"Present state of R&D on thermoelectric technology in Japan","authors":"T. Kajikawa","doi":"10.1109/ICT.2001.979820","DOIUrl":"https://doi.org/10.1109/ICT.2001.979820","url":null,"abstract":"Thermoelectric technology, in particular, thermoelectric power generation technology, has been recognized as one of the major energy conservation technologies in Japan. Recent outstanding results on the thermoelectric performance for various kinds of thermoelectric materials such as layered Co-based oxides, filled skutterudites etc. show a good potential for achieving high ZT values. These results encouraged and accelerated R&D activities of thermoelectric technology in Japan. This paper provides an overview of the present state of research and development on thermoelectric technology in Japan, and some prospects for the future. R&D results on thermoelectric energy recovery systems from solid waste combustion heat and from waste heat of gasoline engine vehicle carried out under several national projects is briefly introduced. Some of R&D activities of an enhancement of thermoelectric materials by universities and national research institutes are also presented as an example. The R&D effort of the lead-in research on the efficient thermoelectric module including novel high performance materials and proof-of-concept testing supported by NEDO, in which the objective is to arrange the coming national project on thermoelectric technology, is introduced. The development on thermoelectric cooling has been mainly carried out in private companies, which is not included in this paper. The potential contribution of thermoelectric technology to an energy system in Japan and the perspective on thermoelectric power generation technology are summarised.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114729264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Numerical analysis of Peltier current lead [superconducting magnet system] Peltier电流引线[超导磁体系统]的数值分析

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979938

K. Sato, H. Okumura, S. Yamaguchi

引用次数: 2

Thermoelectric properties of Zn/sub 1-x/Al/sub x/O ceramics prepared by the polymerized complex method 聚合配合物法制备Zn/sub - 1-x/Al/sub -x/ O陶瓷的热电性能

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979861

S. Katsuyama, Y. Takagi, M. Ito, K. Majima, H. Nagai

{"title":"Thermoelectric properties of Zn/sub 1-x/Al/sub x/O ceramics prepared by the polymerized complex method","authors":"S. Katsuyama, Y. Takagi, M. Ito, K. Majima, H. Nagai","doi":"10.1109/ICT.2001.979861","DOIUrl":"https://doi.org/10.1109/ICT.2001.979861","url":null,"abstract":"Zn/sub 1-x/Al/sub x/O powders were synthesized by the polymerized complex method and then consolidated by a SPS (Spark Plasma Sintering) apparatus. The microscopic structure and thermoelectric properties were examined and compared with the results of the samples prepared by the conventional solid-state reaction method. A small amount of ZnA1204 spinel phase as the second phase was observed in the sintered samples with x>0.02 by x-ray diffraction and SEM (Scanning Electron Microscope). The grain size of the samples prepared by the polymerized complex method is much smaller than that of the samples prepared by the solid-state reaction method. The absolute value of the Seebeck coefficient, electrical resistivity and thermal conductivity for the samples prepared by the polymerized complex method decrease with increasing x up to about x=0.01, and at fixed Al content of x, they are smaller than those for the samples prepared by the solid-state reaction method. The solubility limit of Al in Zn/sub 1-x/Al/sub x/O system is about x=0.01. The doping of the carrier into the material can be more easily realized in the samples prepared by the polymerized complex method. Zn/sub 0.9975/Al/sub 0.0025/O has a maximum value of figure of merit of 6.9/spl times/10/sup -5/ K/sup -1/ at 1073 K.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130095138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Effects of substrate temperature on thermoelectric properties of amorphous Si/Ge thin films 衬底温度对非晶Si/Ge薄膜热电性能的影响

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979903

Sang Min Lee, Y. Okamoto, T. Kawahara, J. Morimoto

引用次数: 3

Electronic structure of Yb-filled CoSb/sub 3/ skutterudites studied by X-ray photoelectron spectroscopy 用x射线光电子能谱研究了yb填充CoSb/ sub3 / skutterudites的电子结构

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979822

H. Anno, G. Nolas, K. Akai, K. Ashida, M. Matsuura, K. Matsubara

引用次数: 1

Effects of various grain structure and sizes on the thermal conductivity of Ti-based half-Heusler alloys 不同晶粒结构和尺寸对ti基半heusler合金导热性能的影响

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979603

T. Tritt, S. Bhattacharya, Y. Xia, V. Ponnambalam, S. J. Poon, N. Thadhani

{"title":"Effects of various grain structure and sizes on the thermal conductivity of Ti-based half-Heusler alloys","authors":"T. Tritt, S. Bhattacharya, Y. Xia, V. Ponnambalam, S. J. Poon, N. Thadhani","doi":"10.1109/ICT.2001.979603","DOIUrl":"https://doi.org/10.1109/ICT.2001.979603","url":null,"abstract":"Half-Heusler alloys with the general formula TiNiSn/sub 1-X/Sb/sub X/ are currently being investigated for their potential as thermoelectric (TE) materials. These materials exhibit high thermopower (40-250 /spl mu/V/K) and low electrical resistivity values (0.1-8 m/spl Omega/-cm) which yields a relatively large power factor (/spl alpha//sup 2//spl sigma/T) of 0.2-1.0 W/m/sup ./K at room temperature. For these materials to be used in thermoelectric applications, the relatively high thermal conductivity (/spl lambda//spl ap/10 W/m/sup ./K) that is evident in these materials must be reduced. We have investigated the effect of Sb-doping on the Sn site and Zr doping on the Ti site on the electrical and thermal transport of TiNiSn. As expected, it is observed that large concentrations of Zr-doping on Ti-site reduce the lattice thermal conductivity as compared to the parent compounds. However an unusual result is observed with Sb-doping. The lattice thermal conductivity increases somewhat randomly with small amounts (< 5%) of Sb-doping at the Sn-site. This doping should have little effect on the thermal conductivity. A systematic investigation of grain structure in these Sb-doped materials has been performed as an attempt to explain the anomalous behavior of thermal conductivity due to Sb-doping. In addition, effects of grain size reduction on the thermal conductivity in ball milled and shock compressed samples have been investigated in hopes of reducing the lattice thermal conductivity.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122309199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Synthesis and thermoelectric properties of Co-based oxide whiskers 钴基氧化物晶须的合成及其热电性能

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979856

R. Funahashi, I. Matsubara, H. Ikuta, T. Takeuchi, U. Mizutani

{"title":"Synthesis and thermoelectric properties of Co-based oxide whiskers","authors":"R. Funahashi, I. Matsubara, H. Ikuta, T. Takeuchi, U. Mizutani","doi":"10.1109/ICT.2001.979856","DOIUrl":"https://doi.org/10.1109/ICT.2001.979856","url":null,"abstract":"Two kinds of single crystalline whiskers of (Bi/sub 2/Sr/sub 2/O/sub 4/)/sub x/(CoO/sub 2/)/sub 2/ (BC-222) and (Ca/sub 2/CoO/sub 3/)/sub x/CoO/sub 2/ (Co-225) phases were grown from the surfaces of precursor plates by annealing in an O/sub 2/ gas flow. The phases of the whiskers can be controlled by the Co content of the precursor plates. The average compositions of the whiskers are Bi/sub 3.0/(Sr, Ca)/sub 3.1/Co/sub 2.0/O/sub 9+/spl delta// and (Ca, Sr, Bi)/sub 1.9/Co/sub 2.0/O/sub 5+/spl delta// for the BC-222 and the Co-225, respectively. Although the Co-225 whiskers are 1.2 mm at the longest, the BC-222 whiskers reach lengths of as much as 1.0 cm. The difference in the whisker length is due to the microstructure of the precursor plates. Seebeck coefficient and resistivity of both whiskers are higher than 200 /spl mu/VK/sup -1/ and suppressed to a few m/spl Omega/cm at high temperature in air, respectively. These phases seem to have pseudogap at the Fermi level. /spl kappa/ of polycrystalline samples of both phases is suppressed to low values at high temperature. These oxides are promising thermoelectric materials for high temperature application.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126050637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

High temperature stable contacts for thermoelectric sensors and devices 用于热电传感器和设备的高温稳定触点

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979946

H. Ernst, E. Muller, W. Kaysser

{"title":"High temperature stable contacts for thermoelectric sensors and devices","authors":"H. Ernst, E. Muller, W. Kaysser","doi":"10.1109/ICT.2001.979946","DOIUrl":"https://doi.org/10.1109/ICT.2001.979946","url":null,"abstract":"Thermoelectric materials and devices are used for energy conversion,, cooling and thermal sensors. Semiconductors like Si, Si/sub 1-x/Ge/sub x/, SiC, /spl beta/-FeSi/sub 2/ are suitable as thermal sensor materials at elevated temperature due to their high thermopower and high temperature stability. Studying the electrical properties of semiconductors, as well as the normal operation of most semiconductor devices, requires the presence of non-rectifying metal-semiconductor contacts. High temperature stable ohmic contacts to these materials are necessary for good sensor performance and long term stability. Laser welding allows fast processing of thermally stable contacts to semiconductors and offers a convenient and reliable way to form electrical contacts for high temperature material characterization. Ohmic contacts to Si and FeSi/sub 2/ were prepared by laser welding of thin tungsten studs and foils to the semiconductor. Thermocouple wires can be welded to such a tungsten interlayer for temperature measurement immediately at the semiconductor surface. Si-W contacts and FeSi/sub 2/-W contacts show good thermal stability up to 450/spl deg/C in air. For use at even higher temperatures tungsten must be protected against oxidation. Different oxidation protective layers were studied. To form ohmic contacts to moderately doped n-type SiC Ni-based alloys were used. The thermal stability of these contacts was investigated up to 750/spl deg/C in air. The electrical characteristics (I-V interdependence and contact resistance) and the thermal stability of the contacts were investigated. Electron microscopy, EDX and XRD analyses were used to detect chemical reactions arising in the laser welding process and under thermal treatment.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114884685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2