Effects of substrate temperature on thermoelectric properties of amorphous Si/Ge thin films

Abstract

We intended to control the degree of amorphousness with the substrate temperature. Amorphous thin films were prepared by the alternate deposition of Ge, doped heavily with Au, and Si in an ultrahigh vacuum chamber. In this paper, we compare the thermoelectric properties of amorphous Si/Ge thin films deposited on the substrate at 77 K and room temperature. The power factor of the sample deposited on the substrate at 77 K increases by the thermal annealing compared to that of the sample deposited at room temperature.