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Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)最新文献

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Physical processes in thermoelectric coolers 热电冷却器中的物理过程
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979924
L. Bulat, E.V. Buzin, U. S. Whang
{"title":"Physical processes in thermoelectric coolers","authors":"L. Bulat, E.V. Buzin, U. S. Whang","doi":"10.1109/ICT.2001.979924","DOIUrl":"https://doi.org/10.1109/ICT.2001.979924","url":null,"abstract":"A usage of the thermoelectric method of refrigeration is one of the best practical methods of cooling chips and other electronic components. The miniaturization of electronic elements requires the miniaturization of thermoelectric coolers for such electronics. Modern thermoelectric coolers may have a thickness of microns. Under these conditions, all transport regulations of thermoelectricity in semiconductors become incorrect. In the present paper a thermoelectric theory of microminiaturized thermoelectric coolers is proposed. The new nonlinear effects result in changing of all equations for heat and electric transport. Nonlinear analytical formulas for all kinetic coefficients and for thermoelectric figure of merit under such conditions have been derived. The theory shows that, in typical cases, the nonlinear effects could lead to an increase of the thermoelectric figure of merit and COP. Such a result is inconsistent with known experimental data.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124040835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermoelectric generator for heat meter 热计用热电发电机
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979920
Xiaoguang Liu, Fengyue Wang, Y. Qi
{"title":"Thermoelectric generator for heat meter","authors":"Xiaoguang Liu, Fengyue Wang, Y. Qi","doi":"10.1109/ICT.2001.979920","DOIUrl":"https://doi.org/10.1109/ICT.2001.979920","url":null,"abstract":"This paper introduces a thermoelectric generator that supplies electricity for a heat meter (calorimeter). It is an excellent pollution-free power source produced by utilizing the principle of the Seebeck effect of a special semiconductor, which can generate electricity directly by the hot water inside the heat supply pipes. Inside the generator, there are voltage-stabilizing circuits that can supply stable voltage of direct current. The generator belongs to a solid power source, which can work safely and continuously for long periods without maintenance. Its long-term ratio between the property and price is more advantageous than other usable batteries.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127984324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of partial substitution of ni by pd on thermoelectric properties of ZrNiSn-based compounds pd部分取代ni对zrnisn基化合物热电性能的影响
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979879
Q. Shen, L. Chen, J. Yang, G. Meisner, T. Goto, T. Hirai
{"title":"Effects of partial substitution of ni by pd on thermoelectric properties of ZrNiSn-based compounds","authors":"Q. Shen, L. Chen, J. Yang, G. Meisner, T. Goto, T. Hirai","doi":"10.1109/ICT.2001.979879","DOIUrl":"https://doi.org/10.1109/ICT.2001.979879","url":null,"abstract":"The ZrNiSn-based half-Heusler compounds crystallize in a cubic structure of the MgAgAs type, and belong to semiconductors with narrow band gaps. Due to promising potential as new thermoelectric materials, they have attracted much attention in recent years. In the present paper, compounds with Pd partial substitution on the Ni sites, were successfully synthesized by solid state reaction method. Effects of such substitution on the thermoelectric properties were mainly studied. It is shown that, the substitution of Pd for Ni resulted in a significant reduction in the thermal conductivity. The Seebeck coefficient also decreased, but only by a small amount. In a Hf/sub 0.5/Zr/sub 0.5/Ni/sub 0.8/Pd/sub 0.2/Sn/sub 0.99/Sb/sub 0.01/ compound, a power factor of 19.5 /spl mu/W/cm-K/sup 2/ and a thermal conductivity as low as of 4.5 W/m-K were measured at room temperature. The dimensionless figure of merit, ZT, increased with increasing temperature and reached a maximum value of 0.7 at about 800 K.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132627901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
X-ray spectra of skutterudite and filled skutterudite 角钼矿和充填角钼矿的x射线光谱
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979833
K. Koga, K. Akai, K. Oshiro, M. Matsuura
{"title":"X-ray spectra of skutterudite and filled skutterudite","authors":"K. Koga, K. Akai, K. Oshiro, M. Matsuura","doi":"10.1109/ICT.2001.979833","DOIUrl":"https://doi.org/10.1109/ICT.2001.979833","url":null,"abstract":"X-ray near edge spectra of La-filled and unfilled skutterudites are studied by the first-principle density functional calculation. For this purpose electronic structures of LaCo/sub 4/Sb/sub 12/ and CoSb/sub 3/ are calculated by means of the full-potential linearized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). As the electronic structure of skutterudite is sensitive to the lattice parameter, the lattice parameters of CoSb/sub 3/ are determined by the minimizing condition of the total energy including the spin-orbit (SO) interaction. The obtained lattice parameters are in good agreement with the experimental values. By using the determined values electronic structures of CoSb/sub 3/ and LaCo/sub 4/Sb/sub 12/ are calculated. The band gap of CoSb/sub 3/ is 110 meV, which is about a half of the result without SO interaction. X-ray absorption and emission near edge spectra for Co-L/sub III/ and Sb K are calculated and discussed.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116786440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A practical method for measuring thermal conductance and cooling power of thermoelectric modules 一种测量热电模块热导率和冷却功率的实用方法
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979944
Zeshen Wang, Jianzhong Zhang, Yang Liu
{"title":"A practical method for measuring thermal conductance and cooling power of thermoelectric modules","authors":"Zeshen Wang, Jianzhong Zhang, Yang Liu","doi":"10.1109/ICT.2001.979944","DOIUrl":"https://doi.org/10.1109/ICT.2001.979944","url":null,"abstract":"A practical technique has been developed to measure the thermal conductance and cooling power of TE modules. The principle of this technique and the measuring equipment has been given. Good agreement between this technique and a Z-meter or Harman Technique has been obtained. Experimental errors of the entire system at about room temperature do not exceed 2%.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133153311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Rigorous calculations related to functionally graded and segmented thermoelements 严格的计算相关的功能分级和分段热电元件
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979889
A. Kaliazin, V. Kuznetsov, D. Rowe
{"title":"Rigorous calculations related to functionally graded and segmented thermoelements","authors":"A. Kaliazin, V. Kuznetsov, D. Rowe","doi":"10.1109/ICT.2001.979889","DOIUrl":"https://doi.org/10.1109/ICT.2001.979889","url":null,"abstract":"Functionally grading thermoelements is an effective method of increasing the performance of a thermoelectric device. It is achieved either by a gradual change of the material composition along the length of the thermoelement, or by segmenting different materials, so that the figure-of-merit is close to maximum at every point of the thermoelement, under a given temperature difference. The overall performance of such a thermoelement strongly depends on the distribution of thermoelectric parameters and temperature, and on the operating conditions (large temperature gradient, high electrical current). In realistic calculations Thomson and distributed Peltier effects cannot be neglected. We use finite element analysis to obtain realistic results, which are compared with ones obtained using the formulae of Ioffe (1957). Influences of the Thomson and distributed Peltier effects are calculated for thermoelements operating in cooling and generating modes.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133238549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Thermoelectric properties of Ca/sub 3/Co/sub 4/O/sub 9+/spl delta//-based polycrystalline oxides Ca/sub 3/Co/sub 4/O/sub 9+/spl δ基多晶氧化物的热电性能
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979869
J. Nan, Junbo Wu, Xisong Zhou, Shengli Chen, C. Nan
{"title":"Thermoelectric properties of Ca/sub 3/Co/sub 4/O/sub 9+/spl delta//-based polycrystalline oxides","authors":"J. Nan, Junbo Wu, Xisong Zhou, Shengli Chen, C. Nan","doi":"10.1109/ICT.2001.979869","DOIUrl":"https://doi.org/10.1109/ICT.2001.979869","url":null,"abstract":"Oxide ceramics have recently attracted much attention as candidate thermoelectric materials due to their special potential for applications in power generation using waste heat. In this paper, (Na/sub x/Ca/sub 1-x/)/sub 3/Co/sub 4/O/sub 9+/spl delta// (x=0.05-0.2) polycrystalline samples with a layered structure were prepared by a sol-gel method followed by a low-temperature sintering procedure. The electrical conductivity, the power factor and thermal conductivity basically increase with increasing temperature. The figure of merit is smaller than that of traditional thermoelectric alloys, which is about 1.1/spl times/10/sup -4/ K/sup -1/ at 700/spl deg/C in the sample (Na/sub x/Ca/sub 1-x/)/sub 3/Co/sub 4/O/sub 9+/spl delta// (x=0.05-0.2).","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"336 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133050232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Crystalline structure and mechanical properties of Bi/sub 2/Te/sub 3/-based profiled crystals grown by direct crystallization method 直接结晶法生长Bi/sub - 2/Te/sub - 3基异型晶体的结构和力学性能
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979838
S.M. Manyakin, M. Volkov
{"title":"Crystalline structure and mechanical properties of Bi/sub 2/Te/sub 3/-based profiled crystals grown by direct crystallization method","authors":"S.M. Manyakin, M. Volkov","doi":"10.1109/ICT.2001.979838","DOIUrl":"https://doi.org/10.1109/ICT.2001.979838","url":null,"abstract":"Crystalline structure peculiarities of Bi/sub 2/Te/sub 3/-based thermoelectric materials grown in the form of flat plates by the direct crystallization method are examined. Values of the critical parameter (G/V)/sub cr/ under which the structure perfection of growing crystals becomes poor are estimated. Experimental results of mechanical tension, compression and bending tests carried out in different crystallographic orientations are presented. It is shown that the mechanical characteristics of materials are closely connected with crystalline structure.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130294006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Research and preparation of two-dimensional plane arrays thermal imaging sensor 二维平面阵列热成像传感器的研究与制备
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979937
Shuichi Ye, Guowei Zhang, Xilian Wang, Dajin Wang, Z. Liu
{"title":"Research and preparation of two-dimensional plane arrays thermal imaging sensor","authors":"Shuichi Ye, Guowei Zhang, Xilian Wang, Dajin Wang, Z. Liu","doi":"10.1109/ICT.2001.979937","DOIUrl":"https://doi.org/10.1109/ICT.2001.979937","url":null,"abstract":"Infrared imaging systems have been applied widely, and developed step by step with improved performance of infrared image devices. Although a thermocouple prepared by high quality thermoelectric materials has already been used as thermoelectric detectors, it is of new exploration when used as units of two-dimensional plane array thermal imaging sensors. In this paper, the working principle, device design, manufacturing process, device performance and measurement of two-dimensional plane array sensors are introduced and given in detail. The prepared thermal imaging sensors with 10 /spl times/ 10 pixels in 20 /spl times/ 20 mm/sup 2/ are made up of thermocouples with a single pixel of dimension of 0.4 /spl times/ 0.4 /spl times/ 0.15 mm/sup 3/ and prepared by pseudo-ternary BiTe thermoelectric materials with figure of merits Z=3.09 /spl times/ 10/sup -3/ K. The unit area for accepting thermal radiation is 1.9 /spl times/ 1.9 mm/sup 2/. The performance of the pixels and their uniformity in the arrays is measured respectively. From measurements, the maximum responsivity 0.12 V/W, detectability D* 1.17 /spl times/ 10 Hz/sup 1/2//W and responsive-time 24 ms of the thermal image arrays are obtained. The experimental results and theoretical analyses were compared, based on which, new ways for improving two-dimensional plane arrays thermal imaging sensors are proposed in this paper.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124534329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Physical properties of novel thermoelectric skutterudites: Eu/sub y/Fe/sub 4-x/Co/sub x/Sb/sub 12/ and Eu/sub y/Fe/sub 4-x/Ni/sub x/Sb/sub 12/ 新型热电滑石的物理性质:Eu/sub y/Fe/sub 4-x/Co/sub x/Sb/sub 12/和Eu/sub y/Fe/sub 4-x/Ni/sub x/Sb/sub 12/
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979826
S. Berger, C. Paul, E. Bauer, A. Grytsiv, P. Rogl, D. Kaczorowski, A. Saccone, R. Ferro, C. Godart
{"title":"Physical properties of novel thermoelectric skutterudites: Eu/sub y/Fe/sub 4-x/Co/sub x/Sb/sub 12/ and Eu/sub y/Fe/sub 4-x/Ni/sub x/Sb/sub 12/","authors":"S. Berger, C. Paul, E. Bauer, A. Grytsiv, P. Rogl, D. Kaczorowski, A. Saccone, R. Ferro, C. Godart","doi":"10.1109/ICT.2001.979826","DOIUrl":"https://doi.org/10.1109/ICT.2001.979826","url":null,"abstract":"Alloys from the two solid solutions Eu/sub y/Fe/sub 4-x/Co/sub x/Sb/sub 12/ and Eu/sub y/Fe/sub 4-x/Ni/sub x/Sb/sub 12/ were synthesised by argon arc-melting and isotypism was established with the skutterudite-type structure LaFe/sub 4/P/sub 12/. The Eu-content of the samples was determined by Rietveld refinements and electron microprobe measurements EMPA confirming a gradual decrease of the maximum Eu-content from y=0.83 in Eu/sub y/Fe/sub 4/Sb/sub 12/ to y=0.44 in Eu/sub y/Co/sub 4/Sb/sub 12/ and to y=0.56 in Eu/sub y/Fe/sub 2/Ni/sub 2/Sb/sub 12/. Eo/sub 0.83/Fe/sub 4/Sb/sub 12/ orders magnetically around 84 K and the transition temperature decreases as a function of the Fe/Co and Fe/Ni substitution. X-ray absorption edge and magnetic susceptibility measurements served to define the electronic configuration of Eu and the magnetic state of the polyanions [Fe/sub 4-x/Co/sub x/Sb/sub 12/]. To evaluate the figure of merit, thermopower, thermal conductivity and electrical resistivity measurements were performed. Due to the Fe/Co-substitution the hole number is reduced and further compensated by the electropositive element. This influences the Seebeck coefficients significantly, which has a great impact on the figure of merit.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"2006 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127636679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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