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Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)最新文献

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Electronic state calculation of PbTe thermoelectric material group using DV-X /spl alpha/ method 用DV-X /spl α /方法计算PbTe热电材料群的电子态
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979846
Dong Yoon Lee, Heewoong Lee, B. C. Woo, Ikgyun Kim
{"title":"Electronic state calculation of PbTe thermoelectric material group using DV-X /spl alpha/ method","authors":"Dong Yoon Lee, Heewoong Lee, B. C. Woo, Ikgyun Kim","doi":"10.1109/ICT.2001.979846","DOIUrl":"https://doi.org/10.1109/ICT.2001.979846","url":null,"abstract":"The electronic structure of PbTe type IV-VI semiconductors having halite structure was calculated by discrete variation X/spl alpha/ (DV-X /spl alpha/) molecular orbital method, assuming the Hartree-Fock-Slater approximation. A Pb/sub 13/M/sub 14/ (M=S, Se, Te) cluster model was used for calculation. The wave functions of all electrons in the cluster, bond overlap population between Pb and M atom by Mulliken's population analysis, density of states and difference charge density were calculated. By comparing calculated parameters and properties, it can be qualitatively explained that the bond overlap population and net charge is related to some properties.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134284028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of thermoelectric materials with bismuth nanowire array 用铋纳米线阵列制备热电材料
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979908
Wei Wang, Weiling Zhang, Liping Si, Jianzhong Zhang, Jian-ping Gao
{"title":"Fabrication of thermoelectric materials with bismuth nanowire array","authors":"Wei Wang, Weiling Zhang, Liping Si, Jianzhong Zhang, Jian-ping Gao","doi":"10.1109/ICT.2001.979908","DOIUrl":"https://doi.org/10.1109/ICT.2001.979908","url":null,"abstract":"It has been theoretically verified that the thermoelectric performance can be improved greatly when normal thermoelectric materials possess low dimensional structure. In our lab., Doped N-type and P-type Bi nanowire array thermoelectric materials have been fabricated by electrodeposition technology. The porous alumina films with nano-pore array structure were used as template, and one-dimensional thermoelectric materials dispersed in alumina matrix have been obtained, and their composition and structure have been analyzed.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133827525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Application of new theory of thermoelectric effects on CdTe 热电效应新理论在碲化镉上的应用
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979910
S. Vacková, K. Žďánský, D. Chren, T. Horažďovský, V. Gorodinskij, O. Majlingová, K. Vacek
{"title":"Application of new theory of thermoelectric effects on CdTe","authors":"S. Vacková, K. Žďánský, D. Chren, T. Horažďovský, V. Gorodinskij, O. Majlingová, K. Vacek","doi":"10.1109/ICT.2001.979910","DOIUrl":"https://doi.org/10.1109/ICT.2001.979910","url":null,"abstract":"The fast rise of Seebeck coefficient in CdTe with decreasing temperature found experimentally, has not been successfully explained theoretically for many years. It is shown that this effect can be realistically explained by a new theory (Yu. Gurevich et al, Phys. Rev., in press) which includes processes on the metal semiconductor interface. Also the influence of temperature gradient on the sensitivity of gamma detectors in CdTe is discussed.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117082441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
10-channel temperature controller-recorder for semiconductor air-conditioner 用于半导体空调的10通道温度控制器记录仪
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979934
Xiaoguang Liu, Shang Wu, Y. Qi, Fengyue Wang
{"title":"10-channel temperature controller-recorder for semiconductor air-conditioner","authors":"Xiaoguang Liu, Shang Wu, Y. Qi, Fengyue Wang","doi":"10.1109/ICT.2001.979934","DOIUrl":"https://doi.org/10.1109/ICT.2001.979934","url":null,"abstract":"This paper introduces a kind of 10-channel temperature controller-recorder for semiconductor air-conditioners of storage-transport containers. The core-controlled unit is the MCU-AT89C5 . DS1820 digital thermometers are used for temperature sampling and circuit checks. A micro-stylus printer prints values of the each point temperature and the working state timing. The output signal of the MCU through a photo-coupler drives two relays to control the working mode (cooling/heating) and the function state. The controlled program of the MCU is adopted C51 senior language and assembles language. 1-Wire/sup TM/ digital thermometers that predigest the external device and cable of the sensors greatly reduce cost and improve reliability.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"11 suppl_1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116076432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The variation of the equilibrium of chemical reactions in the process of (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) zone-melted material production (Bi/sub - 2/Te/sub - 3/)(Sb/sub - 2/Te/sub - 3/)(Sb/sub - 2/Se/sub - 3/)区熔材料生产过程中化学反应平衡的变化
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979835
O. B. Sokolov, S. Skipidarov, N. I. Duvankov
{"title":"The variation of the equilibrium of chemical reactions in the process of (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) zone-melted material production","authors":"O. B. Sokolov, S. Skipidarov, N. I. Duvankov","doi":"10.1109/ICT.2001.979835","DOIUrl":"https://doi.org/10.1109/ICT.2001.979835","url":null,"abstract":"Methods of thermodynamic computation and differential thermal analysis were used for research into the effect of the variation of the chemical equilibrium in the synthesis of (Bi/sub 2/Te/sub 3/)/sub x/(Sb/sub 2/Te/sub 3/)/sub y/(Sb/sub 2/Se/sub 3/)/sub z/ (x+y+z=100%) in an ampoule on the characteristics of crystals grown by the vertical zone-melting technique.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123557329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic structure and properties of Co/sub 1-x/M/sub x/Sb/sub 3/ (M=Fe,Ni,Pd,Pt) skutterudites Co/sub - 1-x/M/sub -x/ Sb/sub - 3/ (M=Fe,Ni,Pd,Pt)晶圆体的电子结构与性能
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979832
H. Anno, Koji Akai, J. Nagao, K. Ashida, Matsuura Mitsuru, K. Matsubara
{"title":"Electronic structure and properties of Co/sub 1-x/M/sub x/Sb/sub 3/ (M=Fe,Ni,Pd,Pt) skutterudites","authors":"H. Anno, Koji Akai, J. Nagao, K. Ashida, Matsuura Mitsuru, K. Matsubara","doi":"10.1109/ICT.2001.979832","DOIUrl":"https://doi.org/10.1109/ICT.2001.979832","url":null,"abstract":"Substitution of transition metals (Fe, Ni, Pd, and Pt) for Co sites in CoSb/sub 3/ skutterudites significantly affects both the electron transport and thermal properties. For example, Fe substitution causes a large decrease in lattice thermal conductivity, and Pd or Pt substitution is suitable for optimizing the thermoelectric properties, resulting in high dimensionless thermoelectric figure of merit near 0.9. To make clear the electronic states of these transition metals and effect of substitution on the electronic structure of CoSb/sub 3/, we have systematically investigated the electronic structure of Co/sub 1-x/M/sub x/Sb/sub 3/ (M=Fe,Ni,Pd,Pt) skutterudites by x-ray photoelectron spectroscopy and inelastic electron tunneling spectroscopy. Experimental results are compared with theoretical results of band calculation made by the full-potential linearized augmented-plane-wave method. The effect of transition metal substitution on the electronic properties is discussed in terms of a model obtained from band calculations. In addition, structural defects are also discussed from the results of electron tunneling measurements. The results indicate that the substitution of transition metals for Co sites substantially affects the electronic properties of this material.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121409269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal resistance measurements of the surfaces of various materials in room temperature to 50 K 各种材料表面在室温至50k的热阻测量
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979943
T. Oike, Y. Hasegawa, S. Takayama, S. Yamaguchi
{"title":"Thermal resistance measurements of the surfaces of various materials in room temperature to 50 K","authors":"T. Oike, Y. Hasegawa, S. Takayama, S. Yamaguchi","doi":"10.1109/ICT.2001.979943","DOIUrl":"https://doi.org/10.1109/ICT.2001.979943","url":null,"abstract":"Measurements of transport parameters of thermoelectric semiconductors need to control the temperature profile of the samples. Therefore, the appropriate materials should be employed for the sample-base and the electrodes in the different experiments. Similar problems occur when a thermoelectric element is set into an instrument. We measured the thermal resistances of the interfaces on various conditions from room temperature to 50 K. Furthermore, we separated the thermal resistances into two parts: those of the material itself and its pure interfaces.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"73 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126108820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and thermoelectric properties of grain aligned (Ca,Bi)/sub 3/Co/sub 4/O/sub 9/ ceramics 晶粒排列(Ca,Bi)/sub 3/Co/sub 4/O/sub 9/陶瓷的制备及其热电性能
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979852
I. Matsubara, R. Funahashi, T. Takeuchi, Y. Zhou
{"title":"Preparation and thermoelectric properties of grain aligned (Ca,Bi)/sub 3/Co/sub 4/O/sub 9/ ceramics","authors":"I. Matsubara, R. Funahashi, T. Takeuchi, Y. Zhou","doi":"10.1109/ICT.2001.979852","DOIUrl":"https://doi.org/10.1109/ICT.2001.979852","url":null,"abstract":"Effects of sintering process on the thermoelectric properties of (Ca,Bi)/sub 3/Co/sub 4/O/sub 9/ ceramics have been investigated. We have prepared (Ca, Bi)/sub 3/Co/sub 4/O/sub 9/ bulk materials using the methods of spark plasma sintering (SPS), hot pressing (HP), and a combination of them. Power factors of the SPS and HP samples at 700/spl deg/C are 4.2/spl times/10/sup -4/ Wm/sup -1/ K/sup -2/ and 4.5/spl times/10/sup -4/ Wm/sup -1/ K/sup -2/, respectively. The combination of SPS and HP enables bulk ceramics (SPS-HP) to be high density, grain alignment, and low resistivity without any degradation of the thermoelectric power. The power factor and figure of merit of the SPS-HP sample attain to 5.7/spl times/10/sup -4/ Wm/sup -1/ K/sup -2/ and ZT=0.29 at 700/spl deg/C, respectively.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129228856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Strain imaging in thermoelectric devices by laser probe shearography 热电器件的激光探针剪切应变成像
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979941
S. Jorez, S. Dilhaire, L. P. Lopez, S. Granby, W. Claeys, K. Uemura, J. Stockholm
{"title":"Strain imaging in thermoelectric devices by laser probe shearography","authors":"S. Jorez, S. Dilhaire, L. P. Lopez, S. Granby, W. Claeys, K. Uemura, J. Stockholm","doi":"10.1109/ICT.2001.979941","DOIUrl":"https://doi.org/10.1109/ICT.2001.979941","url":null,"abstract":"We have developed an original optical set-up and method for the measurement of strain in electronic components. We have applied it for the study of thermoelectric devices. The method is based on speckle interferometry imaging called shearography. Two images of a same object lighted by coherent laser light are recorded upon a CCD camera through an appropriate optical system. The two images are slightly shifted one with respect to the other. This allows determining the gradient of normal surface displacement in the direction of the shift. Information taken in this manner in several directions allows to derive a map of a parameter related to the surface displacement gradients that we call \"fragility factor\".","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124602551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
In-plane thermoelectric properties of Si/Ge superlattice Si/Ge超晶格的面内热电性质
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979901
W. Liu, T. Borca-Tasciuc, J. Liu, K. Taka, K. Wang, M. Dresselhaus, G. Chen
{"title":"In-plane thermoelectric properties of Si/Ge superlattice","authors":"W. Liu, T. Borca-Tasciuc, J. Liu, K. Taka, K. Wang, M. Dresselhaus, G. Chen","doi":"10.1109/ICT.2001.979901","DOIUrl":"https://doi.org/10.1109/ICT.2001.979901","url":null,"abstract":"In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3/spl omega/ method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127663176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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