热电效应新理论在碲化镉上的应用

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI:10.1109/ICT.2001.979910

S. Vacková, K. Žďánský, D. Chren, T. Horažďovský, V. Gorodinskij, O. Majlingová, K. Vacek

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摘要

实验中发现的CdTe中塞贝克系数随温度降低而快速上升的现象，多年来一直没有得到理论解释。结果表明，这种效应可以用一种新的理论来解释。Gurevich等人，物理学。Rev.， in press)，其中包括金属半导体接口上的工艺。讨论了温度梯度对CdTe中伽马探测器灵敏度的影响。

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Application of new theory of thermoelectric effects on CdTe

The fast rise of Seebeck coefficient in CdTe with decreasing temperature found experimentally, has not been successfully explained theoretically for many years. It is shown that this effect can be realistically explained by a new theory (Yu. Gurevich et al, Phys. Rev., in press) which includes processes on the metal semiconductor interface. Also the influence of temperature gradient on the sensitivity of gamma detectors in CdTe is discussed.

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Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)

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