Si/Ge超晶格的面内热电性质

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI:10.1109/ICT.2001.979901

W. Liu, T. Borca-Tasciuc, J. Liu, K. Taka, K. Wang, M. Dresselhaus, G. Chen

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引用次数: 14

摘要

本文报道了在绝缘体上硅晶片上生长的硅/锗超晶格的面内热电特性的实验研究。采用双线3/spl ω /法测量了所研究的超晶格样品的面内导热系数。测量了同一样品的面内塞贝克系数和电导率。实验数据与基于载流子口袋工程和部分扩散声子界面散射的载流子输运理论模型的结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-plane thermoelectric properties of Si/Ge superlattice

In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3/spl omega/ method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering.

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来源期刊

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)

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