(Bi,Sb,Te)相图中p型和n型热电材料

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI:10.1109/ICT.2001.979606

H. Scherrer, R. Martin-Lopez, B. Lenoir, A. Dauscher, S. Scherrer

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引用次数: 6

摘要

烧结的n型碲化物化合物的优良值较低似乎是由于晶界处的硒偏析所致。从化学计量偏差的角度研究了Bi/sub 2/Te/sub 3/和Sb/sub 2/Te/sub 3/二元化合物的输运性质。我们沿着伪二元相图讨论了这些性质，以确定Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/固溶体的存在域。对(Bi,Sb,Te)相图的研究使我们能够确定一个可以获得n型材料的区域。

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Thermoelectric materials of p and n type from the (Bi,Sb,Te) phase diagram

It seems that the lower figure of merit for sintered n type telluride compounds is due to the selenium segregation at the grain boundaries. We present the transport properties of the Bi/sub 2/Te/sub 3/ and Sb/sub 2/Te/sub 3/ binary compounds in terms of stoichiometric deviation. We discuss these properties along the pseudo-binary phase diagram to determine the domain of existence of Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ solid solutions. The study of the (Bi,Sb,Te) phase diagram allowed us to identify a zone where n-type materials can be obtained.

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Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)

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