晶圆熔合薄膜冷却半导体激光器结构

C. Labounty, A. Karim, X. Fan, G. Zeng, P. Abraham, Y. Okuno, J. Bowers
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引用次数: 6

摘要

我们研究了半导体激光器的冷却要求和温度稳定需求,重点是垂直腔面发射激光器(VCSEL)阵列。平面内腔和垂直腔几何形状的半导体激光器能够在小至100 /spl mu/m/sup /的面积上产生kW/cm/sup /数量级的大热功率密度。当需要冷却激光时,冷却器应该能够提供类似数量的热泵。对于这些大量的热泵,需要薄膜冷却器结构,特别是如果阵列的单个设备必须具有精确的温度稳定。提出了利用Au-Au晶圆熔合技术将激光与薄膜冷却器集成在一起。两个界面的融合是通过沉积的au膜中的质量输运来完成的,这可以在压力和高温下实现。对熔接界面的质量进行了研究,并给出了初步的实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer-fused thin film cooler semiconductor laser structures
We examine the cooling requirements and temperature stabilization needs of semiconductor lasers with emphasis on vertical cavity surface emitting laser (VCSEL) arrays. Semiconductor lasers in both in-plane and vertical cavity geometries are capable of generating large heat power densities of the order of kW/cm/sup 2/ over areas as small as 100 /spl mu/m/sup 2/. When cooling of the laser is needed, the cooler should be able to provide similar amounts of heat pumping. For these large amounts of heat pumping, a thin-film cooler structure is needed, especially if individual devices of an array must have precise temperature stabilization. Integration of the laser and thin film cooler by Au-Au wafer fusion is proposed. The fusion of the two interfaces is accomplished by mass transport in the deposited Au-films, which can be achieved under pressure at elevated temperatures. The quality of the fused interface is studied and preliminary experimental results are presented.
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