Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)最新文献_第7页

Thermal stability of thermoelectric properties for nondoped PbTe 非掺杂PbTe热电性能的热稳定性

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979845

K. Tanaka, H. Kohri, I. Shiota, I. Nishida

引用次数: 2

Temperature dependent structural and thermoelectric properties of Cs/sub 8/Na/sub 16/Si/sub 136/ and Cs/sub 8/Na/sub 16/Ge/sub 136/ Cs/sub 8/Na/sub 16/Si/sub 136/和Cs/sub 8/Na/sub 16/Ge/sub 136/的温度相关结构和热电性能

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979881

G. Nolas, D. VanDerveer, A. Wilkinson, J. Cohn

引用次数: 1

Fabrication of a p-type Sb/sub 2/Te/sub 3/ and n-type Bi/sub 2/Te/sub 3/ thin film thermocouple p型Sb/sub 2/Te/sub 3/和n型Bi/sub 2/Te/sub 3/薄膜热电偶的制备

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979895

H. Zou, D. M. Rowe, S.G.K. Williams

{"title":"Fabrication of a p-type Sb/sub 2/Te/sub 3/ and n-type Bi/sub 2/Te/sub 3/ thin film thermocouple","authors":"H. Zou, D. M. Rowe, S.G.K. Williams","doi":"10.1109/ICT.2001.979895","DOIUrl":"https://doi.org/10.1109/ICT.2001.979895","url":null,"abstract":"A thin film Sb/sub 2/Te/sub 3/-Bi/sub 2/Te/sub 3/ based thermocouple was fabricated. P-type antimony telluride thin films and n-type bismuth telluride thin films have been deposited by co-evaporation on to glass substrates. The conditions for deposition have been investigated as a function of substrate temperature (T/sub s/) and flux ratio (F/sub r/ = F(Te)/F(Sb,Bi)) and optimised to achieve a high thermoelectric power factor. The qualities of deposited films, e.g. structure, composition and morphology, have been examined by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDXA), flame atomic absorption spectroscopy (FAAS) and atomic force microscope (AFM). The thermoelectric properties of the thin films have been studied by room temperature measurement of the Seebeck coefficient, Hall coefficient and electrical resistivity. It has been observed that the Seebeck coefficient and electrical conductivity of p-type Sb/sub 2/Te/sub 3/ thin film (/spl alpha//sub p/, /spl sigma//sub p/) and n-type Bi/sub 2/Te/sub 3/ thin films (/spl alpha//sub n/, /spl sigma//sub n/) were found to be about 185 /spl mu/V/K, 0.32 /spl times/ 10/sup 3/ /spl Omega//sup -1/ cm/sup -1/ and -228 /spl mu/V/K, 0.77 /spl times/ 10/sup 3/ /spl Omega//sup -1/ cm/sup -1/, respectively. From optimal deposition parameters, a thin film thermocouple was fabricated and operated in Peltier mode. The observed maximum value for temperature difference between hot and cold end is about 15 K for a current of 50 mA. The results indicate that good quality antimony telluride and bismuth telluride thin films grown by co-evaporation are promising candidates for use in a micro-Peltier module.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114966503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Growth of PbTe crystals for thermoelectric applications 热电应用PbTe晶体的生长

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979844

Xu Jiayue, Zhang Aiqiong

引用次数: 1

An electro-thermal model of thermoelectric modules in heat pump and cooling mode (CHIM model) 热泵和制冷模式下热电模块的电热模型(CHIM模型)

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979929

W. Chimchavee, J. Khedari, J. Hirunlabh

引用次数: 10

Experimental study of thermoelectric properties of InSb nanowires InSb纳米线热电性能的实验研究

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979906

M. Vedernikov, O. Uryupin, B. Goltsman, Y. Ivanov, Y. Kumzerov

引用次数: 1

Influence of structures and compositions on thermoelectric properties of silicon borides 结构和成分对硼化硅热电性能的影响

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979874

M. Mukaida, T. Tsunoda, M. Ueda, Y. Imai

{"title":"Influence of structures and compositions on thermoelectric properties of silicon borides","authors":"M. Mukaida, T. Tsunoda, M. Ueda, Y. Imai","doi":"10.1109/ICT.2001.979874","DOIUrl":"https://doi.org/10.1109/ICT.2001.979874","url":null,"abstract":"Silicon borides have excellent potential as high-temperature thermoelectric devices because of their high melting point and relatively large Seebeck coefficient. In the present work, the silicon borides were prepared by CVD, a melting and a sintering method. CVD was used for preparing samples to measure the intrinsic characteristics of the silicon borides. On the other hand, a melting and a sintering method were used for adding some elements (Fe, Cr, Co, Ni) to the silicon borides. CVD was attempted by high-frequency (80kHz) induction heating, and the samples were deposited on graphite substrates at the substrate temperatures from 1188 to 1616 K under the total pressures in the CVD chamber of 2.7 kPa. Sintered samples were prepared by a pressing from powder raw materials, and the pressed pellets were sintered at 1723 K for 2 hours in an electric furnace. The crystal structures of the samples were characterized by X-ray diffraction (XRD), and the morphologies were observed by scanning electron microscope (SEM). Electrical properties such as Seebeck coefficient, electrical conductivity and Hall effect were measured. The Seebeck coefficient of the boride reached about 400 /spl mu/VK/sup -1/, and the electrical conductivity was above 30000 Sm/sup -1/. The values of carrier mobility were less than 0.1 cm/sup -2/V/sup -1/s/sup -1/.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133393538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electronic structure and thermoelectric properties of Skutterudites 九角钨矿的电子结构和热电性质

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979830

Koji Akai, K. Koga, K. Oshiro, Matsuura Mitsuru

{"title":"Electronic structure and thermoelectric properties of Skutterudites","authors":"Koji Akai, K. Koga, K. Oshiro, Matsuura Mitsuru","doi":"10.1109/ICT.2001.979830","DOIUrl":"https://doi.org/10.1109/ICT.2001.979830","url":null,"abstract":"Thermoelectric properties on Yb filled skutterudite antimonides are calculated by using a realistic band structure and discussed from the point of view of electronic structure. The electronic structure is calculated by the full-potential linearized augmented plane-wave (FLAPW) method with the local density approximation (LDA). In the band structure calculation of YbFe/sub 4/Sb/sub 12/ the 4f electron is treated by two ways: one is as itinerant electron, another is as localized electron in the Yb ion. In the itinerant case Yb ion shows mixed valence between divalent and trivalent, in the localized case trivalent. In both cases the band structure near Fermi level is characterized by Fe: 3d orbital. The band structure of YbCo/sub 4/Sb/sub 12/ is calculated as Yb-filling CoSb/sub 3/, which is a n-type material. The f orbital of the Yb ion is strongly hybridized with the valence band, the conduction band near the bottom affects 6s and 5d of Yb atomic orbital. Electronic transport coefficients are calculated within relaxation time approximation using the linearized Boltzmann equation. Then the electron velocity is calculated by the Fourier interpolation method. The calculated coefficient of thermoelectric power /spl alpha//T is 0.07 /spl mu/V/K/sup 2/ at room temperatures, which is about 1/2 of the experimental value.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"80 2-3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133124260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Bi/sub 2-x/Sb/sub x/Te/sub 3/ thick thermoelectric films obtained by electrodeposition from hydrochloric acid solutions 用盐酸溶液电沉积法制备Bi/sub - 2-x/Sb/sub -x/ Te/sub - 3/厚热电薄膜

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979897

M. Nedelcu, M. Sima, T. Vişan, T. Pascu, I. Franga, F. Craciunoiu

引用次数: 9

Phase diagram calculations of multicomponent systems, a tool for tailoring thermoelectric materials 多组分系统相图计算，热电材料裁剪工具

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979909

J. Tedenac, R. Marin-Ayral, D. Ravot, M. Record

引用次数: 0