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Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)最新文献

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Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors 基于/spl β /-FeSi/sub - 2/基热传感器特性线性化的分段FGM
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979891
Č. Drašar, H. Ernst, H. Kaibe, L. Rauscher, E. Muller, W. Kaysser
{"title":"Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors","authors":"Č. Drašar, H. Ernst, H. Kaibe, L. Rauscher, E. Muller, W. Kaysser","doi":"10.1109/ICT.2001.979891","DOIUrl":"https://doi.org/10.1109/ICT.2001.979891","url":null,"abstract":"Highly sensitive thermal sensors can be developed when replacing metallic alloys in high temperature thermoelectric (TE) detectors by semiconducting materials. Functionally graded materials (FGM) can be used to tune the temperature characteristics of the signal responsivity, which should be independent from temperature. A technique of preparing segmented TE FGM of FeSi/sub 2/ doped with Al, FeSi/sub 2/ doped with Mn, or FeSi/sub 2/ double doped with Mn and Al is demonstrated. A correlated variation of the TE properties caused by change of the doping is found. The doping content of the material was varied mainly to control the temperature dependence of the Seebeck coefficient S. For highly responsive heat flux sensors, high S and low K are desired. Al+Mn double doping was employed to achieve proper S values. The linearization of sensor characteristics needs in the easiest approach a temperature independent S. This aim was met using a stack of segments with different temperature curves of the Seebeck coefficient. Constant integral thermopower between -50/spl deg/C and +500/spl deg/C with a comparably high value of about 270 /spl mu/V/K was numerically predicted for the stack with a dispersion below 5%. Accordingly, a segmented thermocouple has been prepared after the modeling results and has been characterized.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134603815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the thermal behaviour of PN thermoelectric couples by laser probe interferometric measurement 激光探针干涉测量PN热电偶热行为的研究
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979940
L. Patiño-Lopez, S. Dilhaire, S. Grauby, S. Jorez, W. Claeys, K. Uemura, J. Stockholm
{"title":"Study of the thermal behaviour of PN thermoelectric couples by laser probe interferometric measurement","authors":"L. Patiño-Lopez, S. Dilhaire, S. Grauby, S. Jorez, W. Claeys, K. Uemura, J. Stockholm","doi":"10.1109/ICT.2001.979940","DOIUrl":"https://doi.org/10.1109/ICT.2001.979940","url":null,"abstract":"The purpose of the present paper is to provide experimental data related to the temperature distribution within thermoelectric devices (TE). Moreover our aim is to get this knowledge for a dynamic temperature response of the device. We propose a non-contact optical measuring method, based upon very high-resolution interferometry, to map temperature effects upon the surface of running thermoelectric devices. The Peltier sources within the device generate thermal waves associated to heat transport. These waves interfere when AC current is driven through the device. The interferences are clearly observed in our measurements, showing how heat flows from different sources and merge. The measuring method can be used to check material properties which in turns allows to optimize contact design.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133824657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Chemical synthesis of Ca/sub 9/Co/sub 12/O/sub 28/ and thermoelectric power Ca/sub 9/Co/sub 12/O/sub 28/的化学合成及热电动力
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979868
Shengli Chen, J. An, K. Cai, C. Nan
{"title":"Chemical synthesis of Ca/sub 9/Co/sub 12/O/sub 28/ and thermoelectric power","authors":"Shengli Chen, J. An, K. Cai, C. Nan","doi":"10.1109/ICT.2001.979868","DOIUrl":"https://doi.org/10.1109/ICT.2001.979868","url":null,"abstract":"The nanosized Ca/sub 9/Co/sub 12/O/sub 28/ powder was synthesized via a sol-gel process. The phase composition was characterized by means of X-ray diffraction. Polycrystalline samples of Ca/sub 9/Co/sub 12/O/sub 28/ were prepared by a sintering procedure of nanosized power. The Seebeck coefficient and electrical conductivity of the samples were measured from 573K up to 1073K. The Seebeck coefficient increases with increasing temperature.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133103939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric properties of electrically conductive polypyrrole film 导电聚吡咯薄膜的热电性能
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979894
H. Yan, T. Ishida, N. Toshima
{"title":"Thermoelectric properties of electrically conductive polypyrrole film","authors":"H. Yan, T. Ishida, N. Toshima","doi":"10.1109/ICT.2001.979894","DOIUrl":"https://doi.org/10.1109/ICT.2001.979894","url":null,"abstract":"We present thermoelectric properties of films of the electrically conductive organic polymer polypyrrole. Highly electrically conductive polypyrrole films were electrochemically prepared using sodium p-toluenesulfonate as a supporting electrolyte. Thermoelectric properties of the polypyrrole films were systematically investigated over a wide range of temperatures above room temperature. The high electrical conductivity of the polypyrrole films gives a significant advantage of high thermoelectric power factor. In addition polypyrrole films showed extremely low thermal diffusivity, similar to electrically conductive polyaniline films. The maximum ZT of the polypyrrole film, which was calculated using estimated thermal conductivity from the polyaniline films, is 10/sup -2/ at ca. 423 K. The value is comparable with that of the inorganic thermoelectric material FeSi/sub 2/.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130539046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
MEMS thermoelectric microcooler MEMS热电微冷却器
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979916
D. Yao, C. Kim, G. Chen, J. Liu, K. Wang, J. Snyder, J. Fleurial
{"title":"MEMS thermoelectric microcooler","authors":"D. Yao, C. Kim, G. Chen, J. Liu, K. Wang, J. Snyder, J. Fleurial","doi":"10.1109/ICT.2001.979916","DOIUrl":"https://doi.org/10.1109/ICT.2001.979916","url":null,"abstract":"We report prototype thermoelectric microcoolers (/spl mu/-TEC) based on transport along thin- and thick-film planes using MEMS technology. The paper describes the fabrication processes as well as an analytic model used to design the microdevices. Si/Ge superlattice thin films grown by MBE and electrochemically deposited Bi/sub 2/Te/sub 3/ films are used as the thermoelectric materials in the fabrication of the /spl mu/-TEC. To reduce the heat leakage, the substrates are removed under the active region such that the cooling spots are suspended only by the thermoelectric legs. Additional heat leakage through the supporting structure and thermal radiation are considered through modeling.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133143687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Electrical activity of metal vacancies in Pb/sub 1-x/Sn/sub x/Te solid solutions and thermoelectric properties of compositions for p-type leg of middle-temperature range thermogenerator Pb/sub - 1-x/Sn/sub -x/ Te固溶体中金属空位的电活性及p型热发生器支腿组合物的热电性能
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979842
M. Fedorov, M. Vedernikov, E. A. Gurieva, L. V. Prokof’eva, Y. Ravich
{"title":"Electrical activity of metal vacancies in Pb/sub 1-x/Sn/sub x/Te solid solutions and thermoelectric properties of compositions for p-type leg of middle-temperature range thermogenerator","authors":"M. Fedorov, M. Vedernikov, E. A. Gurieva, L. V. Prokof’eva, Y. Ravich","doi":"10.1109/ICT.2001.979842","DOIUrl":"https://doi.org/10.1109/ICT.2001.979842","url":null,"abstract":"The maximum densities of holes generated by cation vacancies, as well as thermoelectric parameters of (Pb/sub 1-x/Sn/sub x/)/sub 1-y/Te/sub y/ solid solutions with tin content x in the range from 0.4 to 0.6, were studied. It is shown that each vacancy produces four holes in the valence band and that only for small x can the concept of a doubly charged vacancy be used. The maximum figure of merit Z is (1.0-1.1) /spl times/ 10/sup -3/ K/sup -1/ at T = 800-850 K. The relatively high value of Z achieved without doping is due to the high electrical conductivity provided, first, by the small effective mass of holes and, second, by the high electrical activity of the vacancies.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122241598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electronic densities of states of Silicon-Boron system 硅-硼体系状态的电子密度
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979875
Y. Imai, M. Mukaida, M. Ueda, A. Watanabe, K. Kobayashi, T. Tsunoda
{"title":"Electronic densities of states of Silicon-Boron system","authors":"Y. Imai, M. Mukaida, M. Ueda, A. Watanabe, K. Kobayashi, T. Tsunoda","doi":"10.1109/ICT.2001.979875","DOIUrl":"https://doi.org/10.1109/ICT.2001.979875","url":null,"abstract":"In order to understand thermoelectric properties of Si-B alloys B/sub 3/Si or B/sub 4/Si, B/sub 6/Si, B/sub n/Si and /spl beta/-rhombohedral boron (/spl beta/-B), band-calculations have been attempted using a first-principle pseudopotential method. For P-B, partial occupancy of interstitial sites would be required to explain the generation of localized levels between the gap of the conduction band and valence band. Semiconducting nature of B/sub 3/Si (or B/sub 4/Si) could be predicted. B/sub 6/Si has definite DOS values at its Fermi level. The localization of the wavefunction by disordered arrangement of the atoms would play an essential role for its electronic properties.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124463009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated cooling for Si-based microelectronics 硅基微电子集成冷却
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979917
X. Fan, G. Zeng, C. LaBounty, D. Vashaee, J. Christofferson, A. Shakouri, J. Bowers
{"title":"Integrated cooling for Si-based microelectronics","authors":"X. Fan, G. Zeng, C. LaBounty, D. Vashaee, J. Christofferson, A. Shakouri, J. Bowers","doi":"10.1109/ICT.2001.979917","DOIUrl":"https://doi.org/10.1109/ICT.2001.979917","url":null,"abstract":"Thin film thermoelectric coolers are advantageous for their high cooling power density and their potential integrated applications. Si/sub 1-x/Ge/sub x/ is a good thermoelectric material at high temperatures and superlattice structures can further enhance the device performance. Si/sub 1-x/Ge/sub x/ and Si/sub 1-x/Ge/sub x//Si superlattice structures were grown on Si substrates using molecule beam epitaxy. Si/sub 1-x/Ge/sub x/ and Si/sub 1-x/Ge/sub x//Si superlattice thin film microcoolers with film thickness of the order of several microns were fabricated using integrated circuit processing technology. Micro thermocouples and integrated thermistor sensors were used to characterize these coolers. Maximum cooling power density on the order of hundreds of watts per square centimeter was measured at room temperature. It is possible to monolithically integrate these coolers with Si-based microelectronic devices for localized cooling and temperature stabilization.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131242928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials prepared by pulse-current hot-pressing 脉冲热压法制备Bi/sub - 2/Te/sub - 3/相关材料的热电性能
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979839
H. Kitagawa, Y. Shinohara, T. Kitamura, Y. Noda
{"title":"Thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials prepared by pulse-current hot-pressing","authors":"H. Kitagawa, Y. Shinohara, T. Kitamura, Y. Noda","doi":"10.1109/ICT.2001.979839","DOIUrl":"https://doi.org/10.1109/ICT.2001.979839","url":null,"abstract":"Hot-press deformation was performed for Bi/sub 2/Te/sub 3/-related samples. The ingots as the source material were grown by the Bridgman method with the nominal compositions of Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and Bi/sub 2/Te/sub 2.85/Se/sub 0.15/ A disk cut from the ingot was deformed by hot-pressing under pulse-current heating. The crystal structures of the deformed samples were identified by X-ray diffraction. All diffraction peaks were assigned to Bi/sub 2/Te/sub 3/-type structure and the patterns indicate the samples were oriented in the hexagonal (00/spl middot/l) plane. The Hall effect measurements indicate that the carrier concentration of the samples is in the order of magnitude of 10/sup 25/ m/sup -3/ in the temperature range of 80 to 300 K. The power factor after the deformation exceeds those for the source ingots. The results indicate that the hot-press deformation can be expected to enhance thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123265246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristic of maximum power with temperature difference for thermoelectric generator 热电发电机的最大功率与温差特性
Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI: 10.1109/ICT.2001.979923
B. C. Woo, D. Lee, H. Lee, I.J. Kim
{"title":"Characteristic of maximum power with temperature difference for thermoelectric generator","authors":"B. C. Woo, D. Lee, H. Lee, I.J. Kim","doi":"10.1109/ICT.2001.979923","DOIUrl":"https://doi.org/10.1109/ICT.2001.979923","url":null,"abstract":"This paper is associated with the manufacture of a thermoelectric generator (TEG) and the characteristic of TEG. TEG consists of a water heater, pump, 32 thermoelectric modules and aluminum, and hot and cold water flowed through the aluminum containers. It was found that the electric power increased with increasing temperature difference(/spl Delta/ T) in the range between 20/spl sim/50 K. The electric efficiency took a maximum value, 1.04% for /spl Delta/ T=50 K. On the other hand, these electric behaviors could be calculated with the function of temperature difference and the electric current. This simulation may be useful to estimate the capacity of TEG and to develop a thermoelectric generation system which converts unused energy from close-at-hand sources such as garbage incineration heat and industrial exhaust etc. into electricity.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116900885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
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