脉冲热压法制备Bi/sub - 2/Te/sub - 3/相关材料的热电性能

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589) Pub Date : 2001-06-08 DOI:10.1109/ICT.2001.979839

H. Kitagawa, Y. Shinohara, T. Kitamura, Y. Noda

{"title":"脉冲热压法制备Bi/sub - 2/Te/sub - 3/相关材料的热电性能","authors":"H. Kitagawa, Y. Shinohara, T. Kitamura, Y. Noda","doi":"10.1109/ICT.2001.979839","DOIUrl":null,"url":null,"abstract":"Hot-press deformation was performed for Bi/sub 2/Te/sub 3/-related samples. The ingots as the source material were grown by the Bridgman method with the nominal compositions of Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and Bi/sub 2/Te/sub 2.85/Se/sub 0.15/ A disk cut from the ingot was deformed by hot-pressing under pulse-current heating. The crystal structures of the deformed samples were identified by X-ray diffraction. All diffraction peaks were assigned to Bi/sub 2/Te/sub 3/-type structure and the patterns indicate the samples were oriented in the hexagonal (00/spl middot/l) plane. The Hall effect measurements indicate that the carrier concentration of the samples is in the order of magnitude of 10/sup 25/ m/sup -3/ in the temperature range of 80 to 300 K. The power factor after the deformation exceeds those for the source ingots. The results indicate that the hot-press deformation can be expected to enhance thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials prepared by pulse-current hot-pressing\",\"authors\":\"H. Kitagawa, Y. Shinohara, T. Kitamura, Y. Noda\",\"doi\":\"10.1109/ICT.2001.979839\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-press deformation was performed for Bi/sub 2/Te/sub 3/-related samples. The ingots as the source material were grown by the Bridgman method with the nominal compositions of Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and Bi/sub 2/Te/sub 2.85/Se/sub 0.15/ A disk cut from the ingot was deformed by hot-pressing under pulse-current heating. The crystal structures of the deformed samples were identified by X-ray diffraction. All diffraction peaks were assigned to Bi/sub 2/Te/sub 3/-type structure and the patterns indicate the samples were oriented in the hexagonal (00/spl middot/l) plane. The Hall effect measurements indicate that the carrier concentration of the samples is in the order of magnitude of 10/sup 25/ m/sup -3/ in the temperature range of 80 to 300 K. The power factor after the deformation exceeds those for the source ingots. The results indicate that the hot-press deformation can be expected to enhance thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials.\",\"PeriodicalId\":203601,\"journal\":{\"name\":\"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.2001.979839\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2001.979839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对Bi/sub 2/Te/sub 3/相关试样进行热压变形。采用Bridgman法对标称成分为Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/和Bi/sub 2/Te/sub 2.85/Se/sub 0.15/ A的钢锭进行生长，并在脉冲电流加热下对钢锭进行热压变形。用x射线衍射分析了变形样品的晶体结构。所有的衍射峰都属于Bi/sub 2/Te/sub 3/型结构，图案表明样品在六边形(00/spl中点/l)平面上取向。霍尔效应测量表明，在80 ~ 300 K温度范围内，样品的载流子浓度为10/sup 25/ m/sup -3/数量级。变形后的功率因数大于源锭。结果表明，热压变形可以提高Bi/sub 2/Te/sub 3/相关材料的热电性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials prepared by pulse-current hot-pressing

Hot-press deformation was performed for Bi/sub 2/Te/sub 3/-related samples. The ingots as the source material were grown by the Bridgman method with the nominal compositions of Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and Bi/sub 2/Te/sub 2.85/Se/sub 0.15/ A disk cut from the ingot was deformed by hot-pressing under pulse-current heating. The crystal structures of the deformed samples were identified by X-ray diffraction. All diffraction peaks were assigned to Bi/sub 2/Te/sub 3/-type structure and the patterns indicate the samples were oriented in the hexagonal (00/spl middot/l) plane. The Hall effect measurements indicate that the carrier concentration of the samples is in the order of magnitude of 10/sup 25/ m/sup -3/ in the temperature range of 80 to 300 K. The power factor after the deformation exceeds those for the source ingots. The results indicate that the hot-press deformation can be expected to enhance thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)

自引率

0.00%

发文量