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2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)最新文献

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Distributed asymmetrical thick film L/C components 分布式非对称厚膜信用证组件
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314643
V. Desnica, L. Zivanov, O. Aleksic, M. Lukovic, L. Lukic
{"title":"Distributed asymmetrical thick film L/C components","authors":"V. Desnica, L. Zivanov, O. Aleksic, M. Lukovic, L. Lukic","doi":"10.1109/ICMEL.2004.1314643","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314643","url":null,"abstract":"This paper presents planar thick film components and their practical implementations to filters. Different thick film L/C component geometries were designed, printed on alumina, fired and characterized in the HF range. They were asymmetric to input and output terminations, and to positive and negative (or ground) applied voltages and HF signals. L-inductive, C-capacitive parameters were distributed using different planar thick film constructions: inductor windings were printed as the top electrode of capacitor and vice versa, planar capacitors were printed between the windings. As a result, the groups of components were realized on 0.5 inch /spl times/ 1 inch; 1 inch /spl times/ 1 inch alumina substrates as DIL (dual-in-line package) matrix to serve as filter arrays in EMI (Electromagnetic Interference) suppression.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"28 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114135566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RADFET utilization for spacecraft dosimetry RADFET在航天器剂量测定中的应用
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314914
Y. Kimoto, A. Jaksic
{"title":"RADFET utilization for spacecraft dosimetry","authors":"Y. Kimoto, A. Jaksic","doi":"10.1109/ICMEL.2004.1314914","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314914","url":null,"abstract":"This paper describes the total dose effect measurement systems mounted aboard the MDS-1 satellite, in particular the dosimetric system utilizing RADFET devices. Ground calibration results and initial flight data are presented.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121260476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Thick-film NTC thermistors based on spinel-type semiconducting electroceramics 尖晶石型半导体电陶瓷厚膜NTC热敏电阻
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314873
I. Brunets, O. Mrooz, O. Shpotyuk, H. Altenburg
{"title":"Thick-film NTC thermistors based on spinel-type semiconducting electroceramics","authors":"I. Brunets, O. Mrooz, O. Shpotyuk, H. Altenburg","doi":"10.1109/ICMEL.2004.1314873","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314873","url":null,"abstract":"Thick-film NTC thermistors based on spinel-type semiconducting electroceramics of different composition /Cu/sub 0.1/Ni/sub 0.1/Co/sub 1.6/Mn/sub 1.2/O/sub 4/ (No.1), Cu/sub 0.1/Ni/sub 0.8/Co/sub 0.21/Mn/sub 1.9/O/sub 4/ (No.2), and Cu/sub 0.8/Ni/sub 0.1/Co/sub 0.2/Mn/sub 1.9/O/sub 4/ (No.3)/ were fabricated. Basic bulk ceramics and fired thick films were characterized by XRD, SEM and EDX microanalysis. Thick films of No. 1-2 ceramics showed higher density and microstructure homogeneity over those of No.3 ceramics. The electrical parameters of planar thick-film and disc-type NTC thermistors were determined and compared. Depending on chemical composition of ceramics, the prepared thick-film elements showed the resistivities in the range of 2 /spl divide/ 40 /spl Omega//spl middot/m, being approx. the 1-2 orders of magnitude larger over those of disc thermistors. The values of constant B/sub 25/85/ ranged from 2980 to 3690 K. Taking into account good reproducibility and satisfactory sensitivities (the values of TRC /spl alpha//spl les/-4 %/K) of Cu/sub 0.1/Ni/sub 0.1/Co/sub 1.6/Mn/sub 1.2/O/sub 4/- and Cu/sub 0.1/Ni/sub 0.8/Co/sub 0.2/Mn/sub 1.9/O/sub 4/-based thickfilm NTC thermistors, they should be suitable as accurate temperature sensors.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121505080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Adsorbed mass and resonant frequency fluctuations of a microcantilever caused by adsorption and desorption of particles of two gases 两种气体粒子的吸附和解吸引起的微悬臂梁的吸附质量和共振频率波动
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314592
Z. Djuric, L. Jokić, M. Frantlović, O. Jakšić, D. Vasiljević-Radović
{"title":"Adsorbed mass and resonant frequency fluctuations of a microcantilever caused by adsorption and desorption of particles of two gases","authors":"Z. Djuric, L. Jokić, M. Frantlović, O. Jakšić, D. Vasiljević-Radović","doi":"10.1109/ICMEL.2004.1314592","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314592","url":null,"abstract":"Microcantilever resonant frequency and mass fluctuation caused by adsorption and desorption of surrounding particles in a two-gas atmosphere are considered. Detailed derivations of mass fluctuation power spectral density and frequency fluctuation power spectral density are performed using analytical approach. The analogy between Shockley-Read generation-recombination processes of electrons in solids and adsorption-desorption processes of particles of a two gas atmosphere around the cantilever is shown. Simulation is given for a silicon microcantilever surrounded by nitrogen and hydrogen.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115604796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Small budget, project based, VLSI design teaching method 小预算，基于项目，VLSI设计教学方法
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314946
A. Pavasovic, J. Popovic
{"title":"Small budget, project based, VLSI design teaching method","authors":"A. Pavasovic, J. Popovic","doi":"10.1109/ICMEL.2004.1314946","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314946","url":null,"abstract":"An introductory VLSI university-level course encompassing all levels of IC design is described. The course is strongly project based, and is achievable even on universities with very limited resources. We describe where and how to get the needed software tools, and how to manage the projects from year to year. A detailed description of one of the projects is also given.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116132981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Bimaterial infrared detector with efficient suppression of interference from ambient temperature 具有有效抑制环境温度干扰的双材料红外探测器
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314636
J. Matovic, J. Lamovec, Z. Djinovic
{"title":"Bimaterial infrared detector with efficient suppression of interference from ambient temperature","authors":"J. Matovic, J. Lamovec, Z. Djinovic","doi":"10.1109/ICMEL.2004.1314636","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314636","url":null,"abstract":"We presents a novel design of MOEMS uncooled infrared detector based on the bimetal effect. Essentially, the detector consists of a kinematic mechanism with temperature sensitive elements, movable connecting bars and micro-mirror/IC-absorber. Mechanical, kinematical and thermal modeling shows us, that the detector is self-compensated, i.e. it is primarily sensitive to tiny temperature changes caused by incident IR radiation, and only slightly sensitive to the large ambient temperature variations. The suppression mechanism is of kinematic type, and does not degrade other detector parameters, especially the detector fill factor and sensitivity. The proposed mechanism is analyzed theoretically and experimental work is in the final stage.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121705608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Advanced power devices for DC-DC conversion 先进的DC-DC转换电源装置
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314552
M. Darwish
{"title":"Advanced power devices for DC-DC conversion","authors":"M. Darwish","doi":"10.1109/ICMEL.2004.1314552","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314552","url":null,"abstract":"A new generation of semiconductor devices for efficient power management applications is presented. Switch-mode dc-dc synchronous buck converter functional blocks are discussed and different system partitioning solutions are examined. The tradeoff in performance, space, power dissipation, and cost objectives are highlighted. Progress in power trench MOSFETs, hybrid Application Specific MOSFETs (ASMs), and power ICs is discussed. Second generation 30-V W-Gated Trench power MOSFET (WFET) with a transistor density of 300 million cells/inch/sup 2/ exhibit a low specific on-resistance of 15 m/spl Omega/.mm/sup 2/ while providing a record-low C/sub rss//C/sub iss/ ratio of 0.04 at V/sub DS/ = 15 V. Optimized WFET devices show a low r/sub (DS)on/ *Q/sub gd/ figure of merit of 10.5 m/spl Omega/.nC.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129502461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transit time components of a SiGe-HBT at low temperature 低温下SiGe-HBT的传输时间分量
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314626
S. Mandal, G.K. Marskole, K. S. Chari, C. Maiti
{"title":"Transit time components of a SiGe-HBT at low temperature","authors":"S. Mandal, G.K. Marskole, K. S. Chari, C. Maiti","doi":"10.1109/ICMEL.2004.1314626","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314626","url":null,"abstract":"The transit time components of a Si/SiGe/Si HBT has been investigated in the low temperature regime through simulation. The effect of reduced temperature has been investigated on each transit time component and effectively an increase in f/sub T/ more than 1.8 times has been obtained when operating temperature is lowered from 300K to 120K. To validate the simulated results, we compare our simulation results with the reported experimental results. The agreement of the experimental data with our simulated f/sub T/ shows that f/sub T/ of a SiGe-HBT is primarily determined by the three components of the transit time, the base minority carrier storage time (/spl sim/65% of T/sub /spl prop//), the emitter minority carrier storage time (/spl sim/7.6% of T/sub ec/), and the base collector space charge layer transit time (/spl sim/16.6% of T/sub ec/) over all the temperature range. In addition, we show that f/sub T/ for a Si-BJT decreases below 150K and goes down from 23.7 GHz to 21.6 GHz when temperature decreased from 150K to 120K. Similar results have been also been reported for Si by other authors. On the other hand, it is shown that for a SiGe-HBT, the f/sub T/ tends to increase even below 150K showing its superiority for cryogenic applications.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129539970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Multilevel validation of online monitor for hard real-time systems 硬实时系统在线监测的多级验证
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314942
M. Jevtic, V. Zerbe, S. Brankov
{"title":"Multilevel validation of online monitor for hard real-time systems","authors":"M. Jevtic, V. Zerbe, S. Brankov","doi":"10.1109/ICMEL.2004.1314942","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314942","url":null,"abstract":"To achieve the required performance of complex electronic systems it is necessary to validate the system function during all phases of the design, which means multilevel validation. A hybrid Online Monitor for hard real time systems (HRTS) has been developed. A special attention was dedicated on the multilevel validation in all phases of the design.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128705036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Educational chip for CMOS VLSI analog blocks prototyping 用于CMOS VLSI模拟块原型的教育芯片
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314947
C. Mihailova, O. Antonova, D. Pukneva, E. Manolov, M. Hristov
{"title":"Educational chip for CMOS VLSI analog blocks prototyping","authors":"C. Mihailova, O. Antonova, D. Pukneva, E. Manolov, M. Hristov","doi":"10.1109/ICMEL.2004.1314947","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314947","url":null,"abstract":"This paper presents architecture of educational chip for prototyping CMOS VLSI analog blocks, The main goal is to design a chip that can be used for simple configuration, reconfiguration and examination of basic analog circuits for VLSI. It will be used in the process of active learning of the students in bachelor's and master's degree programs. This activity is a part of an EDUCHIP project (an educational VLSI integrated circuit), which is in the framework of the international REASON (REsearch and training Action for System On chip desigN) project.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126967690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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