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2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)最新文献

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Diagnostics of large-area solar cell homogeneity using LBIV method 利用LBIV法诊断大面积太阳能电池均匀性
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314919
V. Benda, A. L. Asresahegn
{"title":"Diagnostics of large-area solar cell homogeneity using LBIV method","authors":"V. Benda, A. L. Asresahegn","doi":"10.1109/ICMEL.2004.1314919","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314919","url":null,"abstract":"The paper refers about a possibility to check recombination rate distribution over the area of power (large-area) solar cells from measured values of open circuit voltage V/sub OC/ using local irradiation by monochromatic light a suitable wavelengths (LBIV - Light Beam Initiated Voltage). The method can give information both about recombination centres distribution in large-area solar cells and surface recombination rate at the antireflection coating. From V/sub OC/ distribution, also position and extent of local defects can also be determined. The method can be used to investigate the influence of technology on characteristics of solar cells as an in-process checking with the aim of increasing efficiency and reliability of solar cells.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124908835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and modeling of on-chip electrostatic discharge (ESD) protection structures 片上静电放电(ESD)保护结构的设计与建模
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314905
J. Liou, Xiaofang Gao
{"title":"Design and modeling of on-chip electrostatic discharge (ESD) protection structures","authors":"J. Liou, Xiaofang Gao","doi":"10.1109/ICMEL.2004.1314905","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314905","url":null,"abstract":"Electrostatic discharge (ESD) is a critical reliability concern for microchips. This paper presents a computer-aided design tool for ESD protection design and applications. Specifically, we develop an improved and robust MOS model and implement such a model into the industry standard Cadence SPICE for ESD circuit simulation. Experimental data measured from the transmission line pulsing (TLP) technique and human body model (HBM) tester are included in support of the model.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123545904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance enhancement defect tolerance in the cell matrix architecture 单元矩阵结构的性能增强缺陷容忍度
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314949
C. R. Saha, S. Bellis, A. Mathewson, E. Popovici
{"title":"Performance enhancement defect tolerance in the cell matrix architecture","authors":"C. R. Saha, S. Bellis, A. Mathewson, E. Popovici","doi":"10.1109/ICMEL.2004.1314949","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314949","url":null,"abstract":"This research concentrates on the area of fault tolerant circuit implementation in a field programmable type architecture, In particular, an architecture called the Cell Matrix, presented as a fault tolerant alternative to field programmable gate arrays using their Supercell approach, is studied. Architectural constraints to implement fault tolerant circuit design in this architecture are discussed. Some modifications of its basic Structure, such as the integration of circuitry for error correction and scan path, to enhance fault tolerant circuits design are introduced and are compared to the Supercell approach.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116069365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors 玻璃上硅双极晶体管设计参数对热阻影响的建模
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314610
F. Tamigi, N. Nenadovic, V. d’Alessandro, L. Nanver, N. Rinaldi, J. Slotboom
{"title":"Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors","authors":"F. Tamigi, N. Nenadovic, V. d’Alessandro, L. Nanver, N. Rinaldi, J. Slotboom","doi":"10.1109/ICMEL.2004.1314610","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314610","url":null,"abstract":"This contribution investigates the scalability of thermal resistance in modem RF bipolar transistors. Several different geometries of silicon-on-glass devices are numerically simulated in 3-D and the dependencies on geometric features are evidenced. A convenient meshing procedure is specifically developed for very thin geometries. Simulations are supported by a compact closed-form analytical model. The combination of both simulations and the model allows prediction of thermal resistance at device design stage.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116724822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Power dissipation and gate number reduction of a utilized register, replaced by equivalent counters 用等效计数器代替已使用寄存器的功耗和门数减少
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314952
N. B. Rizvandi, S. Barandagh, A. Khademzadeh
{"title":"Power dissipation and gate number reduction of a utilized register, replaced by equivalent counters","authors":"N. B. Rizvandi, S. Barandagh, A. Khademzadeh","doi":"10.1109/ICMEL.2004.1314952","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314952","url":null,"abstract":"This paper proposes a new method to replace registers with some equivalent counters and consequently to reduce power dissipation and gate numbers without any loss in the original data. If any set of frequent zeros or ones have at least five original members, these counters calculate the number of consecutive zeros or ones in the register and save them instead of the original sequence. This method is an extended form of Run-Length encoding method when input data is only one and zero and can be used to compress delta-sigma signals and to increase effective channel bandwidth, for instance in USB communication. Two examples arc given to illustrate the efficiency of this approach.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117029455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An improved analytical model of IGBT in forward conduction mode 一种改进的正向传导模式下IGBT的解析模型
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314581
Z. Pavlović, I. Manic, N. Stojadinovic
{"title":"An improved analytical model of IGBT in forward conduction mode","authors":"Z. Pavlović, I. Manic, N. Stojadinovic","doi":"10.1109/ICMEL.2004.1314581","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314581","url":null,"abstract":"This paper presents an attempt to improve the existing analytical models for current-voltage characteristics of IGBT in forward conduction mode. The improvement was achieved by incorporating an additional exponential term to account in an adequate manner for a forward current of the p/sup +/-substratc-n-base junction in IGBT structure. The model was verified on commercial devices by comparing the results of modeling with measured values of device current and transconductance. The model yielded good agreement with experimental results in both exponential and active regions of device operation.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117083855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Platinum implantation versus platinum silicide for the local lifetime control of power P-i-N diode 功率P-i-N二极管局部寿命控制的铂注入与硅化铂
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314570
J. Vobecký, P. Hazdra
{"title":"Platinum implantation versus platinum silicide for the local lifetime control of power P-i-N diode","authors":"J. Vobecký, P. Hazdra","doi":"10.1109/ICMEL.2004.1314570","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314570","url":null,"abstract":"Low-temperature diffusion (700 - 725/spl deg/C) of platinum from platinum silicide and implanted layer of platinum (1 MeV) at the anode side of power P-i-N silicon diode were used for local lifetime control. PtSi allows Much higher maximal reduction of excess carrier lifetime than that of implanted platinum (due to the defects from platinum implantation), but still much lower than the standard helium irradiation.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"78 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123639853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Estimation of ion mixture composition with CHEmically Modified Field Effect Transistors 用化学修饰场效应晶体管估计离子混合物的组成
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314591
M. Janicki, M. Daniel, A. Napieralski
{"title":"Estimation of ion mixture composition with CHEmically Modified Field Effect Transistors","authors":"M. Janicki, M. Daniel, A. Napieralski","doi":"10.1109/ICMEL.2004.1314591","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314591","url":null,"abstract":"The paper deals with the problem of ion mixture composition determination. This is realized using the CHEmically Modified Field Effect Transistor (CHEMFET), which is closely related to the conventional Metal-Oxide-Semiconductor device. The main difference between the devices is the construction of the gate structure, where the traditional metal electrode is replaced by a special polymer membrane sensitive to concentration of ions in an electrolyte flowing over the gate. The numerical simulations presented in this paper, concern the problem of the ion mixture composition estimation based on noisy sensor measurements. The estimation is performed knowing the membrane selectivity coefficients. Additionally, the estimation accuracy is improved employing the function specification algorithm, dedicated for solving various inverse problems. The algorithm can be easily implemented as a digital filter.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128011273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A fully integrated 0.35 /spl mu/m CMOS MMIC amplifier for short range 433 MHz ISM band transceiver applications 一个完全集成的0.35 /spl mu/m CMOS MMIC放大器，用于短距离433 MHz ISM波段收发器应用
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314896
P. Baureis, H. Hein, M. Peter, F. Oehler
{"title":"A fully integrated 0.35 /spl mu/m CMOS MMIC amplifier for short range 433 MHz ISM band transceiver applications","authors":"P. Baureis, H. Hein, M. Peter, F. Oehler","doi":"10.1109/ICMEL.2004.1314896","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314896","url":null,"abstract":"A two-stage amplifier is implemented by utilizing Austria Micro System (AMS) 0.35 /spl mu/m CMOS technology with double poly and triple metal layers. The highly linear amplifier consumes 20 mA from a 1.8 V power supply and achieves a power gain of 26 dB with an OIP3 of 14.5 dBm. The fully integrated compact design is realized on only 2 mm/sup 2/ chip area including bias circuitry and power-down mode.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125675348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Connection of fiber optical communication circuits by optical beam self-trapping in photocurable media 光固化介质中光束自俘获连接光纤通信电路
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314634
V. Grimalsky, S. Sarkisov, M. Curley, K.V. Jackson, E. Gutiérrez-D., S. Koshevaya
{"title":"Connection of fiber optical communication circuits by optical beam self-trapping in photocurable media","authors":"V. Grimalsky, S. Sarkisov, M. Curley, K.V. Jackson, E. Gutiérrez-D., S. Koshevaya","doi":"10.1109/ICMEL.2004.1314634","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314634","url":null,"abstract":"An optical single- and multi mode fiber splicing process based on optical beam self-trapping in photocurable organic materials with light induced increase of the refractive index is investigated both theoretically and experimentally. The ends of two optical fiber cables to be spliced are immersed in a photocurable material with a gap maintained between them. The terminal ends of individual fibers in each cable are facing their counterparts. Two optical beams are sent from opposite fiber cores to meet each other. These writing beams increase the refractive index of the material, This results in a formation of in optically induced bridge that traps and directs the beams toward the opposite fiber core. This permanent optical connection can be simultaneously built for all the fibers within each of two cables.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127901496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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