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2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)最新文献

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Implementation of temperature dependence in small-signal models of microwave transistors including noise 含噪声的微波晶体管小信号模型中温度依赖性的实现
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314639
Z. Marinković, V. Markovic, B. Milovanovic
{"title":"Implementation of temperature dependence in small-signal models of microwave transistors including noise","authors":"Z. Marinković, V. Markovic, B. Milovanovic","doi":"10.1109/ICMEL.2004.1314639","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314639","url":null,"abstract":"In this paper, the artificial neural network approach is proposed for prediction purposes of temperature behavior of microwave transistors. Neural networks are used for modeling of temperature dependencies of elements of transistor small-signal models including noise. These dependencies are extracted from transistor signal and noise data referred to a set of temperatures, The developed models are valid in the whole operational range of temperatures.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128306406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Design and analysis of relaxation oscillators based on voltage-driven NICs 基于电压驱动NICs的弛豫振荡器的设计与分析
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314933
J. Popovic, A. Pavasovic
{"title":"Design and analysis of relaxation oscillators based on voltage-driven NICs","authors":"J. Popovic, A. Pavasovic","doi":"10.1109/ICMEL.2004.1314933","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314933","url":null,"abstract":"This paper investigates the design and analysis of relaxation oscillators based on voltage-driven negative impedance converters. Results of Pspice simulations for submicron technologies are shown. In comparison to oscillators based on current-driven NICs, oscillators presented here have much higher operating frequencies.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129994282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved methodology based on hot carriers injections to detect wafer charging damage in advanced CMOS technologies 先进CMOS技术中基于热载流子注入检测晶圆充电损伤的改进方法
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314912
D. Goguenheim, A. Bravaix, S. Gomri, J. Moragues, C. Monserie, N. Legrand, P. Boivin
{"title":"Improved methodology based on hot carriers injections to detect wafer charging damage in advanced CMOS technologies","authors":"D. Goguenheim, A. Bravaix, S. Gomri, J. Moragues, C. Monserie, N. Legrand, P. Boivin","doi":"10.1109/ICMEL.2004.1314912","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314912","url":null,"abstract":"We have studied the possibility to use hot carrier stresses to reveal the damage due wafer charging during plasma process steps in 0.18 /spl mu/m, 0.25 /spl mu/m and 0.6 /spl mu/m CMOS technologies. We have investigated various hot carrier conditions in N- and P-MOSFETs and compared the results to classical parameter studies and short high field injections using a relative sensitivity factor. The most accurate monitor remains the threshold voltage and the most sensitive configuration is found to be short hot electron injections in PMOSFET's.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124524531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Forward and reverse recovery behaviour of diodes in power converter applications 功率变换器应用中二极管的正向和反向恢复行为
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314548
N. Shammas, D. Chamund, P. Taylor
{"title":"Forward and reverse recovery behaviour of diodes in power converter applications","authors":"N. Shammas, D. Chamund, P. Taylor","doi":"10.1109/ICMEL.2004.1314548","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314548","url":null,"abstract":"In this paper we report the characteristics, design considerations and the interaction of fast recovery diodes with the main power semiconductor switch such as thyristors, GTOs, and IGBTs for high power conversion applications. We briefly explain the switching phenomena in diodes and how these are characterised and optimised by using different structures for specific applications in conjunction with main switching devices.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125783002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Performances of conventional thick-film resistors subjected to mechanical straining 传统厚膜电阻器在机械应变作用下的性能
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314920
Z. Stanimirović, M. Jevtic, I. Stanimirovi
{"title":"Performances of conventional thick-film resistors subjected to mechanical straining","authors":"Z. Stanimirović, M. Jevtic, I. Stanimirovi","doi":"10.1109/ICMEL.2004.1314920","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314920","url":null,"abstract":"In this paper the results from a study of mechanical straining effects on reversible resistance changes, gauge factor and noise index of thick-film resistors based on three different resistor compositions with sheet resistances of 1k/spl Omega//sq, 10k/spl Omega//sq and 100k/spl Omega//sq are presented. For the experimental purposes thick-film test resistors of different dimensions were realized. Resistors were subjected to mechanical straining with maximum deflection of 400/spl mu/m. Obtained experimental results were analyzed and correlation between resistance, gauge factor and noise index changes with resistor degradation due to mechanical straining were observed.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128047989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of damascene trenches on grain growth and electromigration behavior of ULSI Cu lines 大马士革沟对ULSI铜线晶粒生长和电迁移行为的影响
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314924
Y. Ji, T. Zhong, Z.G. Li, X. Wang, D. Luo, Z. Qi, Z. Liu, Y. Xia
{"title":"Influence of damascene trenches on grain growth and electromigration behavior of ULSI Cu lines","authors":"Y. Ji, T. Zhong, Z.G. Li, X. Wang, D. Luo, Z. Qi, Z. Liu, Y. Xia","doi":"10.1109/ICMEL.2004.1314924","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314924","url":null,"abstract":"In ULSI damascene-fabricated Cu lines, Cu grain structure is affected by the constraint of the trench sidewalls and then shows smaller grain size than that of Cu blanket films with similar processing conditions. The grain decreased from 80/spl sim/100 nm to 30/spl sim/40 nm, as the linewidth reduced from 4 /spl mu/m to 0.5 /spl mu/m. The electromigration (EM) resistance, the activation energy and the EM induced voiding distribution obtained in the wide and the narrow lines were studied as a function of linewidth and various annealing conditions. The interface diffusion, especially the sidewalls of the trenches has become an increasingly important issue with the line miniaturization and may be in turn responsible for EM failures in deep submicron Cu lines.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126974849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of surface roughness on the properties of ohmic contacts to GaAs 表面粗糙度对砷化镓欧姆接触性能的影响
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314872
N. Dmitruk, O. Borkovskaya, V. Kladko, R. Konakova, Y. Kudryk, O. Lytvyn, V. V. Milenin
{"title":"Effect of surface roughness on the properties of ohmic contacts to GaAs","authors":"N. Dmitruk, O. Borkovskaya, V. Kladko, R. Konakova, Y. Kudryk, O. Lytvyn, V. V. Milenin","doi":"10.1109/ICMEL.2004.1314872","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314872","url":null,"abstract":"Au/Ge/TiB/sub x//Au ohmic contacts to n-GaAs with textured surface have been developed and investigated. Two types of microrelief morphology (quasi-grating and dendrite-like), that are perspective for Solar Cell and sensor application, have been obtained by wet chemical anisotropic etching. The surface morphology and structural perfection were studied by AFM technique and x-ray diffractometry measurements. The effect of surface roughness on the value of contact resistivity and its lateral distribution has been investigated. The qualitative model for nonuniformity of ohmic contact formation caused by the dependence of intrinsic stresses on the interface roughness has been drawn to explain experimentally observed spread of electrical parameters.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132060232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Register transfer low power design based on controller decomposition 基于控制器分解的寄存器传输低功耗设计
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314937
A. Sudnitson
{"title":"Register transfer low power design based on controller decomposition","authors":"A. Sudnitson","doi":"10.1109/ICMEL.2004.1314937","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314937","url":null,"abstract":"Resent investigations have shown the very good results of digital system; and circuits optimization using integration of dynamic power management in the design flow. This approach proceed from detection periods of time during which parts of the circuit are not doing useful work and shut them down by either turning off the power supply or the clock signal. In this work, we take this approach to design at register transfer level, We consider the partition technique for controller and datapath simultaneously and develop a decomposition procedure for the finite state machines with data-path model. The proposed technique leads to a general low power design methodology based on functional partitioning of initial specification.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"592 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134290651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modeling and simulation of impedance of ferrite EMI suppressor with two conductive layers 双导电层铁氧体电磁干扰抑制器阻抗的建模与仿真
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314607
M. Damnjanović, L. Zivanov, G. Stojanović, V. Desnica
{"title":"Modeling and simulation of impedance of ferrite EMI suppressor with two conductive layers","authors":"M. Damnjanović, L. Zivanov, G. Stojanović, V. Desnica","doi":"10.1109/ICMEL.2004.1314607","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314607","url":null,"abstract":"In this paper the equivalent circuit model of ferrite EMI Suppressor and its elements will be introduced. In addition, simulation tool Doubleind for calculation of impedance of ferrite EMI suppressor will be presented. It can be used for multilayer inductors, which consists of conductive layers in soft ferrite material. The impedance can be calculated for a few different ferrites and conductive pastes. Two-layer meander type structures of suppressors are proposed. Comparison of proposed and one-layer suppressors has shown that the impedance of proposed will be more than twice greater.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129692048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A thick film NTC thermistor air flow sensor 厚膜NTC热敏电阻空气流量传感器
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314589
O. Aleksic, P. Nikolić, D. Luković, S. Savić, V. Pejovic, B. Radojcic
{"title":"A thick film NTC thermistor air flow sensor","authors":"O. Aleksic, P. Nikolić, D. Luković, S. Savić, V. Pejovic, B. Radojcic","doi":"10.1109/ICMEL.2004.1314589","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314589","url":null,"abstract":"Two planar NTC thick film thermistors were placed in a rectangular air guide with a large cross section area and connected to opposite branches of a Wheatstone bridge to form air flow sensor. Thick film sensors used in measurements were printed on alumina using of thermistor paste NTC 3K3 - 95/2 in EI Iritel. NTC thermistor paste was composed of submicronic powder (mixture of Mn, Co and Fe oxides), 4% B/sub 2/O/sub 3/ and an organic vehicle. The most suitable planar NTC thermistor geometry for an air sensor was segmented type with an optimized surface value of 75/spl times/12/spl times/0.5 mm. It was used to cover part of an open air gauge and conduct a heat from flowing air. The resistivity difference obtained on the thermistors was compared with the volume velocity of air laminar flow at room ambient temperature and humidity.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115416244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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