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2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)最新文献

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Determination of non-linear harmonic distortion in SPICE using the Integral Function Method 用积分函数法测定SPICE中的非线性谐波畸变
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314897
M. Aleman, A. Cerdeira
{"title":"Determination of non-linear harmonic distortion in SPICE using the Integral Function Method","authors":"M. Aleman, A. Cerdeira","doi":"10.1109/ICMEL.2004.1314897","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314897","url":null,"abstract":"The nonlinear harmonic distortion is an important feature in the design and analysis of devices and analog integrated circuits. The design process is usually performed using the SPICE type simulation programs. The SPICE programs use different methods, as Fourier analysis and non linearity coefficients, for analysis distortion but in most of the cases the results are not quite good, In this work we present results of applying the recently developed Integral Function Method (IFM) to the analysis of non-linear harmonic distortion of simulated devices in SPICE.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128177869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reduced-order modeling for RF/microwave CAD 射频/微波CAD的降阶建模
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314613
S. Mijalkovic
{"title":"Reduced-order modeling for RF/microwave CAD","authors":"S. Mijalkovic","doi":"10.1109/ICMEL.2004.1314613","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314613","url":null,"abstract":"The principles for model order reduction of large linear problems in RF/microwave CAD applications are presented. An alternative practical approach for the creation of projection subspaces is proposed and compared to moment matching methods. Computational results show that for the same order of reduction the proposed approach accurately capture the solution behavior in a much wider frequency range then the standard moment matching Krylov subspace methods.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115902123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs 烧进应力对大功率vdmosfet辐照后退火响应的影响
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314927
S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic, N. Stojadinovic
{"title":"Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs","authors":"S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic, N. Stojadinovic","doi":"10.1109/ICMEL.2004.1314927","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314927","url":null,"abstract":"The effects of pre-irradiation burn-in stressing on post-irradiation annealing response of power VDMOSFETs have been investigated. Threshold voltage rapid increase above its preirradiation value (rebound effect) and mobility increase up to the value somewhat higher than the one after irradiation have been observed during post-irradiation annealing. These phenomena occured with certain delay in pre-irradiation stressed devices. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132370098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible folded FIR filter architecture 柔性折叠FIR滤波器结构
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314934
I. Milentijevic, V. Ciric, O. Vojinovic
{"title":"Flexible folded FIR filter architecture","authors":"I. Milentijevic, V. Ciric, O. Vojinovic","doi":"10.1109/ICMEL.2004.1314934","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314934","url":null,"abstract":"Configurable folded bit-plane architecture for FIR filtering that allows programming of both number of taps and coefficient length is proposed in this paper. Proposed architecture allows designing of flexible folded FIR filter array with fixed size that enables efficient implementation of different wireless standards on single filter. This paper deals with the mapping of unfolded data flow graph onto the configurable folded system using a new folding set assignment. The obtained architecture as a folded system is described by data flow graph, functional block diagram and data flow diagram.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130224711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOSFET models at the edge of 100-nm sizes 在100纳米尺寸边缘的MOSFET模型
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314621
G. Angelov, T. Takov, S. Ristić
{"title":"MOSFET models at the edge of 100-nm sizes","authors":"G. Angelov, T. Takov, S. Ristić","doi":"10.1109/ICMEL.2004.1314621","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314621","url":null,"abstract":"The paper reviews the mainstream MOSFET advanced models with their physical relevance and mathematical techniques. The basics of the respective modeling approaches are discussed showing the principle advantages of the surface potential based approach for describing sub-100-nm devices. Major short-channel and quantum effects in the models are outlined. Emphasis is set upon the latest compact models: BSIM3/4, MOS Models 9/11, EKV, SP2001. Selected characteristics (such as inversion model basis, core reference, drain current and threshold. voltage equations, short-channel and quantum effects, number of model parameters) of the models examined are compared as well as comments on model virtues and shortcomings are given.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134189568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A third order sigma-delta modulator 一个三阶调制器
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314900
D. Milovanovic, M. Savic, M. Nikolic
{"title":"A third order sigma-delta modulator","authors":"D. Milovanovic, M. Savic, M. Nikolic","doi":"10.1109/ICMEL.2004.1314900","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314900","url":null,"abstract":"The design of a sigma-delta modulator is presented in this paper. Third order mash structure is chosen and implemented. Top-down methodology is used and described. Design fulfills imposed requirements which is verified with post-layout transistor level simulation results.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134428832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Design and optimization of GaN/AlGaN quantum wells and Bragg confined structures for short wavelength (1.3/spl mu/m 短波(1.3/spl mu/m) GaN/AlGaN量子阱和Bragg约束结构的设计与优化
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314629
J. Radovanović, Z. Ikonić, V. Jovanovic, V. Milanovic, D. Indin, P. Harrison
{"title":"Design and optimization of GaN/AlGaN quantum wells and Bragg confined structures for short wavelength (1.3/spl mu/m","authors":"J. Radovanović, Z. Ikonić, V. Jovanovic, V. Milanovic, D. Indin, P. Harrison","doi":"10.1109/ICMEL.2004.1314629","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314629","url":null,"abstract":"A procedure is described for extracting the optimal structural parameters of AlGaN-based quantum wells and perturbed superlattices in order to achieve maximal intersubband absorption in the near infrared spectral range. Conventional quantum wells are chosen for their simplicity, while more complex structures relying on Bragg confinement are exploited to increase the transition energy between two quantized states. The well and the barrier widths and the Al content in both types of structures are varied in such a way that the peak absorption energy is kept constant, while searching for the largest value of dipole matrix element. The internal polarization fields and the nonparabolicity effects were taken into account. Finally, the optimal set of idealized structure parameters was used to perform fully self-consistent calculation for realistic, short-period structures.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131562336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical modeling of silicon etching in CF/sub 4//O/sub 2/ plasma-chemical system CF/sub - 4//O/sub - 2/等离子体化学体系中硅腐蚀的数值模拟
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314866
Y. Grigoryev, A. Gorobchuk
{"title":"Numerical modeling of silicon etching in CF/sub 4//O/sub 2/ plasma-chemical system","authors":"Y. Grigoryev, A. Gorobchuk","doi":"10.1109/ICMEL.2004.1314866","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314866","url":null,"abstract":"In the paper the results of numerical optimization of radial flow plasma-chemical reactor in dependence on binary gas composition CF/sub 4//O/sub 2/ are presented. The mathematical model of nonisothermal reactor process with multicomponent chemical kinetics of 12 reactants such as F, F/sub 2/, CF/sub 2/, CF/sub 3/, CF/sub 4/, C/sub 2/F/sub 6/, O, O/sub 2/, CO, CO/sub 2/, COF, COF/sub 2/ was used for numerical calculations. The effects of CF/sub 2/, CF/sub 3/ adsorption and \"competition\" of chemisorption of fluorine and oxygen atoms on the etching of silicon film were included in consideration. The results of optimizing computations of silicon etching rate and uniformity index in binary gas mixture CF/sub 4//O/sub 2/ are presented. It was shown that the etching rate dependence on fluorine concentration with different fractions Of O/sub 2/ in CF/sub 4//O/sub 2/ has a hysteresis character.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132939185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated photodiodes in standard CMOS technology for CD and DVD applications 用于CD和DVD应用的标准CMOS技术集成光电二极管
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314632
S. Radovanovic, A. Anuema, B. Nauta
{"title":"Integrated photodiodes in standard CMOS technology for CD and DVD applications","authors":"S. Radovanovic, A. Anuema, B. Nauta","doi":"10.1109/ICMEL.2004.1314632","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314632","url":null,"abstract":"The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for /spl lambda/=780 nm and /spl lambda/=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124216442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
DC operating point analysis using evolutionary computing 基于进化计算的直流工作点分析
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI: 10.1109/ICMEL.2004.1314935
D. Crutchley, A. Zwolinski
{"title":"DC operating point analysis using evolutionary computing","authors":"D. Crutchley, A. Zwolinski","doi":"10.1109/ICMEL.2004.1314935","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314935","url":null,"abstract":"This paper discusses and evaluates a new approach to operating point analysis based on evolutionary computing (EC). EC can find multiple solutions to a problem by using a parallel search through a population. At the operating point(s) of a circuit the overall error has a minimum value, Therefore, we use an Evolutionary Algorithm (EA) to search the solution space to find these minima, Various evolutionary algorithms are described. Several such algorithms have been implemented in a full circuit analysis tool. The performance and accuracy of the algorithms are compared to Newton-Raphson (NR). Evolutionary algorithms are shown to be robust and to have an accuracy comparable to that of NR. The development of a hybrid algorithm is also discussed.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114826243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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