Integrated photodiodes in standard CMOS technology for CD and DVD applications

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI:10.1109/ICMEL.2004.1314632

S. Radovanovic, A. Anuema, B. Nauta

{"title":"Integrated photodiodes in standard CMOS technology for CD and DVD applications","authors":"S. Radovanovic, A. Anuema, B. Nauta","doi":"10.1109/ICMEL.2004.1314632","DOIUrl":null,"url":null,"abstract":"The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for /spl lambda/=780 nm and /spl lambda/=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2004.1314632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for /spl lambda/=780 nm and /spl lambda/=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.

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用于CD和DVD应用的标准CMOS技术集成光电二极管

分析了完全标准的0.18 /spl μ l /m CMOS技术中高速光电二极管的两种不同几何(布局)和两种结构对其固有(物理)和电气带宽的影响。此外，还讨论了集成光电二极管在CD和DVD光学拾取装置上的可能应用。研究了两种响应率最高的光电二极管结构:nwell/p-衬底和p+/nwell/p-衬底(双光电二极管)。比较了/spl λ /=780 nm和/spl λ /=650 nm波长下光电二极管的带宽，分别对应于CD和DVD激光器。慢基板电流组件将nwell/p基板和p+/nwell/p基板光电二极管的固有带宽限制为6MHz和7MHz，用于CD应用，以及70MHz和100MHz用于DVD应用。这些二极管的电带宽与典型的透阻放大器相结合，将始终大于计算的固有带宽，这意味着二极管电容在全光电接收器设计中并不重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)

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