烧进应力对大功率vdmosfet辐照后退火响应的影响

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI:10.1109/ICMEL.2004.1314927

S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic, N. Stojadinovic

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引用次数: 0

摘要

研究了辐照前烧固应力对大功率vdmosfet辐照后退火响应的影响。在辐照后退火过程中，观察到阈值电压在辐照前的基础上迅速上升(反弹效应)，迁移率上升到辐照后略高的值。这些现象在辐照前应力器件中有一定的延迟发生。根据辐照前应力效应的机制，计算和分析了栅极氧化捕获电荷和界面捕获密度的潜在变化。

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Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs

The effects of pre-irradiation burn-in stressing on post-irradiation annealing response of power VDMOSFETs have been investigated. Threshold voltage rapid increase above its preirradiation value (rebound effect) and mobility increase up to the value somewhat higher than the one after irradiation have been observed during post-irradiation annealing. These phenomena occured with certain delay in pre-irradiation stressed devices. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.

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2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)

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